公开(公告)号：US09542992B2

公开(公告)日：2017-01-10

申请号：US13865281

申请日：2013-04-18

Applicant: NVIDIA CORPORATION

Inventor： Hwong-Kwo Lin ,  Ge Yang ,  Fei Song ,  Xi Zhang ,  Haiyan Gong

IPC: G11C11/412

CPC classification number: G11C11/412

Abstract: A static random access memory (SRAM) cell includes a storage unit configured to store a data bit in a storage node. The SRAM cell further includes an access unit coupled to the storage unit. The access unit is configured to transfer current to the storage node when a word line is asserted. The SRAM cell further includes a row header configured to provide current from a power supply when the word line is not asserted, and to not provide current from the power supply when the word line is asserted. The SRAM cell further includes a column header configured to provide current from a power supply when a write column line is not asserted, and to not provide current from the power supply when the write column line is asserted.

Abstract translation: 静态随机存取存储器（SRAM）单元包括被配置为在存储节点中存储数据位的存储单元。 SRAM单元还包括耦合到存储单元的存取单元。 访问单元被配置为当字线被断言时将电流传送到存储节点。 SRAM单元进一步包括行标头，其被配置为当字线未被断言时提供来自电源的电流，并且当字线被断言时不提供来自电源的电流。 SRAM单元进一步包括列头，其配置成当写入列线未被置位时提供来自电源的电流，并且当写入列线被断言时不提供来自电源的电流。