公开(公告)号：US20170170122A1

公开(公告)日：2017-06-15

申请号：US15356527

申请日：2016-11-18

Applicant: NXP B.V.

Inventor： Hans-Martin Ritter ,  Joachim Utzig ,  Frank Burmeister ,  Godfried Henricus Josephus Notermans ,  Jochen Wynants ,  Rainer Mintzlaff

IPC: H01L23/538 ,  H01L29/06 ,  H01L21/78

CPC classification number: H01L23/3171 ,  H01L21/78 ,  H01L23/291 ,  H01L23/3192 ,  H01L23/5386 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/872

Abstract: A semiconductor device and a method of making the same. The device includes a substrate comprising a major surface and a backside. The device also includes a dielectric partition for electrically isolating a first part of the substrate from a second part of the substrate. The dielectric partition extends through the substrate from the major surface to the backside.