公开(公告)号：US20160218058A1

公开(公告)日：2016-07-28

申请号：US14988443

申请日：2016-01-05

Applicant: NXP B.V.

Inventor： Zhihao Pan ,  Friedrich Hahn ,  Steffen Holland ,  Olaf Pfennigstorf ,  Jochen Wynants ,  Hans-Martin Ritter

IPC: H01L23/498 ,  H01L23/532 ,  H01L21/78

Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate provided in a chip-scale package (CSP). The device also includes a plurality of contacts provided on a major surface of the substrate. The device further includes an electrically floating metal layer forming an ohmic contact on a backside of the semiconductor substrate. The device is operable to conduct a current that passes through the substrate from a first of said plurality of contacts to a second of said plurality of contacts via the metal layer on the backside.

Abstract translation: 半导体器件及其制造方法。 该器件包括设置在芯片级封装（CSP）中的半导体衬底。 该装置还包括设置在基板的主表面上的多个触点。 该器件还包括在半导体衬底的背面形成欧姆接触的电浮置金属层。 所述装置可操作以经由背面上的金属层将从所述多个触点中的第一触点穿过基板的电流传导到所述多个触点中的第二触点。