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公开(公告)号：US20160218058A1
公开(公告)日：2016-07-28
申请号：US14988443
申请日：2016-01-05
Applicant: NXP B.V.
Inventor： Zhihao Pan , Friedrich Hahn , Steffen Holland , Olaf Pfennigstorf , Jochen Wynants , Hans-Martin Ritter
IPC: H01L23/498 , H01L23/532 , H01L21/78
Abstract: A semiconductor device and a method of making the same. The device includes a semiconductor substrate provided in a chip-scale package (CSP). The device also includes a plurality of contacts provided on a major surface of the substrate. The device further includes an electrically floating metal layer forming an ohmic contact on a backside of the semiconductor substrate. The device is operable to conduct a current that passes through the substrate from a first of said plurality of contacts to a second of said plurality of contacts via the metal layer on the backside.
Abstract translation: 半导体器件及其制造方法。 该器件包括设置在芯片级封装（CSP）中的半导体衬底。 该装置还包括设置在基板的主表面上的多个触点。 该器件还包括在半导体衬底的背面形成欧姆接触的电浮置金属层。 所述装置可操作以经由背面上的金属层将从所述多个触点中的第一触点穿过基板的电流传导到所述多个触点中的第二触点。
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公开(公告)号：US09230953B2
公开(公告)日：2016-01-05
申请号：US14516978
申请日：2014-10-17
Applicant: NXP B.V.
Inventor： Zhihao Pan , Steffen Holland
CPC classification number: H01L27/0262 , H01L29/0615 , H01L29/66371 , H01L29/732 , H01L29/7404 , H01L29/7412 , H01L29/87 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
Abstract: A semiconductor ESD protection device comprising a vertical arrangement of alternating conductivity type layers, wherein the layers are arranged as silicon controlled rectifier and wherein the silicon controlled rectifier is arranged as vertical device and having top and bottom opposing contacts.
Abstract translation: 一种半导体ESD保护装置，包括交替导电型层的垂直布置，其中所述层被布置为可控硅整流器，并且其中所述可控硅整流器被布置为垂直装置并且具有顶部和底部相对的触点。
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公开(公告)号：US20160260651A1
公开(公告)日：2016-09-08
申请号：US15049419
申请日：2016-02-22
Applicant: NXP B.V.
Inventor： Shun Tik YEUNG , Pompeo Umali , Hans-Juergen Funke , Chi Ho Leung , Wolfgang Schnitt , Zhihao Pan
IPC: H01L23/367 , H01L27/02 , H01L23/31 , H01L23/528 , H01L21/56 , H01L23/532 , H01L21/78
Abstract: A semiconductor device and a method of making the same. The device includes an electrically conductive heat sink having a first surface. The device also includes a semiconductor substrate. The device further includes a first contact located on a first surface of the substrate. The device also includes a second contact located on a second surface of the substrate. The first surface of the substrate is mounted on the first surface of the heat sink for electrical and thermal conduction between the heat sink and the substrate via the first contact. The second surface of the substrate is mountable on a surface of a carrier.
Abstract translation: 半导体器件及其制造方法。 该装置包括具有第一表面的导电散热器。 该器件还包括半导体衬底。 该装置还包括位于基板的第一表面上的第一触点。 该装置还包括位于基板的第二表面上的第二触点。 衬底的第一表面安装在散热器的第一表面上，用于通过第一接触件在散热器和衬底之间进行电和热传导。 基板的第二表面可安装在载体的表面上。
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公开(公告)号：US20150108536A1
公开(公告)日：2015-04-23
申请号：US14516978
申请日：2014-10-17
Applicant: NXP B.V.
Inventor： Zhihao Pan , Steffen Holland
CPC classification number: H01L27/0262 , H01L29/0615 , H01L29/66371 , H01L29/732 , H01L29/7404 , H01L29/7412 , H01L29/87 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2924/13091 , H01L2924/00014 , H01L2924/00
Abstract: A semiconductor ESD protection device comprising a vertical arrangement of alternating conductivity type layers, wherein the layers are arranged as silicon controlled rectifier and wherein the silicon controlled rectifier is arranged as vertical device and having top and bottom opposing contacts.
Abstract translation: 一种半导体ESD保护装置，包括交替导电型层的垂直布置，其中所述层被布置为可控硅整流器，并且其中所述可控硅整流器被布置为垂直装置并且具有顶部和底部相对的触点。
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