公开(公告)号：US20180145065A1

公开(公告)日：2018-05-24

申请号：US15357570

申请日：2016-11-21

申请人： NXP B.V.

发明人： Steffen Holland ,  Hans-Martin Ritter

IPC分类号： H01L27/02 ,  H01L29/872 ,  H01L29/808 ,  H01L29/417 ,  H01L29/87 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H02H9/04 ,  H01L27/12

CPC分类号： H01L27/0255 ,  H01L27/0262 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/41758 ,  H01L29/78 ,  H01L29/808 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/87 ,  H01L29/872 ,  H02H9/046

摘要： Various aspects of the disclosure are directed to circuitry that may be used to shunt current. As may be consistent with one or more embodiments a first circuit has a plurality of alternating p-type and n-type semiconductor regions with respective p-n junctions therebetween, arranged between an anode end and a cathode end. A second (e.g., bypass) circuit is connected to one of the alternating p-type and n-type semiconductor regions, and forms a further p-n junction therewith. The second circuit operates to provide carrier flow, which influences operation of the first circuit.

公开(公告)号：US20160218058A1

公开(公告)日：2016-07-28

申请号：US14988443

申请日：2016-01-05

申请人： NXP B.V.

发明人： Zhihao Pan ,  Friedrich Hahn ,  Steffen Holland ,  Olaf Pfennigstorf ,  Jochen Wynants ,  Hans-Martin Ritter

IPC分类号： H01L23/498 ,  H01L23/532 ,  H01L21/78

摘要： A semiconductor device and a method of making the same. The device includes a semiconductor substrate provided in a chip-scale package (CSP). The device also includes a plurality of contacts provided on a major surface of the substrate. The device further includes an electrically floating metal layer forming an ohmic contact on a backside of the semiconductor substrate. The device is operable to conduct a current that passes through the substrate from a first of said plurality of contacts to a second of said plurality of contacts via the metal layer on the backside.

摘要翻译： 半导体器件及其制造方法。 该器件包括设置在芯片级封装（CSP）中的半导体衬底。 该装置还包括设置在基板的主表面上的多个触点。 该器件还包括在半导体衬底的背面形成欧姆接触的电浮置金属层。 所述装置可操作以经由背面上的金属层将从所述多个触点中的第一触点穿过基板的电流传导到所述多个触点中的第二触点。

公开(公告)号：US20170148697A1

公开(公告)日：2017-05-25

申请号：US15342285

申请日：2016-11-03

申请人： NXP B.V.

发明人： Tonny Kamphuis ,  Leo van Gemert ,  Hans van Rijckevorsel ,  Sascha Moeller ,  Hartmut Buenning ,  Steffen Holland ,  Y Kuang Huang

IPC分类号： H01L23/31 ,  H01L29/06 ,  H01L23/00 ,  H01L21/3205 ,  H01L21/683 ,  H01L23/528 ,  H01L21/78

CPC分类号： H01L23/3114 ,  H01L21/32051 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/528 ,  H01L24/32 ,  H01L24/83 ,  H01L29/0657 ,  H01L2221/68327 ,  H01L2224/32245 ,  H01L2224/83801 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/10156 ,  H01L2924/17747 ,  H01L2924/35 ,  H01L2924/37

摘要： A semiconductor device and a method of making the same. The device includes a semiconductor substrate having a major surface, a backside and side surfaces extending between the major surface and the backside. The semiconductor device also includes at least one metal layer extending across the backside of the substrate. A peripheral part of the at least one metal layer located at the edge of the substrate between the backside and at least one of the side surfaces extends towards a plane containing the major surface. This can prevent burrs located at the peripheral part of the at least one metal layer interfering with the mounting of the backside of the substrate on the surface of a carrier.

公开(公告)号：US09230953B2

公开(公告)日：2016-01-05

申请号：US14516978

申请日：2014-10-17

申请人： NXP B.V.

发明人： Zhihao Pan ,  Steffen Holland

IPC分类号： H01L27/02 ,  H01L29/66 ,  H01L29/74 ,  H01L29/87 ,  H01L29/06 ,  H01L29/732

CPC分类号： H01L27/0262 ,  H01L29/0615 ,  H01L29/66371 ,  H01L29/732 ,  H01L29/7404 ,  H01L29/7412 ,  H01L29/87 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor ESD protection device comprising a vertical arrangement of alternating conductivity type layers, wherein the layers are arranged as silicon controlled rectifier and wherein the silicon controlled rectifier is arranged as vertical device and having top and bottom opposing contacts.

摘要翻译： 一种半导体ESD保护装置，包括交替导电型层的垂直布置，其中所述层被布置为可控硅整流器，并且其中所述可控硅整流器被布置为垂直装置并且具有顶部和底部相对的触点。

公开(公告)号：US20150108536A1

公开(公告)日：2015-04-23

申请号：US14516978

申请日：2014-10-17

申请人： NXP B.V.

发明人： Zhihao Pan ,  Steffen Holland

IPC分类号： H01L29/74 ,  H01L29/06

CPC分类号： H01L27/0262 ,  H01L29/0615 ,  H01L29/66371 ,  H01L29/732 ,  H01L29/7404 ,  H01L29/7412 ,  H01L29/87 ,  H01L2224/48091 ,  H01L2224/48464 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor ESD protection device comprising a vertical arrangement of alternating conductivity type layers, wherein the layers are arranged as silicon controlled rectifier and wherein the silicon controlled rectifier is arranged as vertical device and having top and bottom opposing contacts.

摘要翻译： 一种半导体ESD保护装置，包括交替导电型层的垂直布置，其中所述层被布置为可控硅整流器，并且其中所述可控硅整流器被布置为垂直装置并且具有顶部和底部相对的触点。

公开(公告)号：US20170092761A1

公开(公告)日：2017-03-30

申请号：US15253563

申请日：2016-08-31

申请人： NXP B.V.

发明人： Soenke Habenicht ,  Steffen Holland

IPC分类号： H01L29/78 ,  H01L29/417 ,  H01L29/739 ,  H01L29/66

CPC分类号： H01L29/7827 ,  H01L29/0696 ,  H01L29/0804 ,  H01L29/0808 ,  H01L29/0873 ,  H01L29/0882 ,  H01L29/1004 ,  H01L29/1008 ,  H01L29/41708 ,  H01L29/41741 ,  H01L29/41758 ,  H01L29/66666 ,  H01L29/66712 ,  H01L29/735 ,  H01L29/7393 ,  H01L29/7809 ,  H01L29/7816

摘要： A semiconductor device (300) comprising: a doped semiconductor substrate (302); an epitaxial layer (304), disposed on top of the substrate, the epitaxial layer having a lower concentration of dopant than the substrate; a switching region disposed on top of the epitaxial layer; and a contact diffusion (350) disposed on top of the epitaxial layer, the contact diffusion having a higher concentration of dopant than the epitaxial layer; wherein the epitaxial layer forms a barrier between the contact diffusion and the substrate.