公开(公告)号：US11424721B2

公开(公告)日：2022-08-23

申请号：US17069416

申请日：2020-10-13

Applicant: NXP B.V.

Inventor： Gian Hoogzaad ,  Guillaume Lebailly ,  Klaas-Jan de Langen

IPC: H03F1/22 ,  H03F3/195

Abstract: An RF amplifier for implementation in SiGe HBT technology is described. The RF amplifier has a cascode stage comprising a common base (CB) transistor and a common emitter (CE) transistor arranged in series between a first voltage rail and a second voltage rail. An RF input is coupled to the base of the CE transistor and an RF output is coupled to the collector of the CB transistor. The RF amplifier includes a CB power-down circuit arranged between the base of the CB transistor and the second voltage rail and a CE power-down circuit arranged between the base of the CE transistor and the second voltage rail. In a power-down mode the CE power-down circuit couples the base of the common-emitter-transistor to the second voltage rail. The CB power-down mode circuit couples the base of the CB transistor to the second voltage rail via a high-ohmic path.

公开(公告)号：US20210159856A1

公开(公告)日：2021-05-27

申请号：US17069416

申请日：2020-10-13

Applicant: NXP B.V.

Inventor： Gian Hoogzaad ,  Guillaume Lebailly ,  Klaas-Jan De Langen

IPC: H03F1/22 ,  H03F3/195

Abstract: An RF amplifier for implementation in SiGe HBT technology is described. The RF amplifier has a cascode stage comprising a common base (CB) transistor and a common emitter (CE) transistor arranged in series between a first voltage rail and a second voltage rail. An RF input is coupled to the base of the CE transistor and an RF output is coupled to the collector of the CB transistor. The RF amplifier includes a CB power-down circuit arranged between the base of the CB transistor and the second voltage rail and a CE power-down circuit arranged between the base of the CE transistor and the second voltage rail. In a power-down mode the CE power-down circuit couples the base of the common-emitter-transistor to the second voltage rail. The CB power-down mode circuit couples the base of the CB transistor to the second voltage rail via a high-ohmic path.