DIFFUSED RESISTOR
    1.
    发明申请
    DIFFUSED RESISTOR 审中-公开

    公开(公告)号:US20170154949A1

    公开(公告)日:2017-06-01

    申请号:US15352770

    申请日:2016-11-16

    Applicant: NXP B.V.

    Abstract: A diffused resistor and method for forming a diffused resistor are provided. The diffused resistor comprises a substrate having a first conductivity type; a first well within the substrate having a second conductivity type; and a second well within the first well having the first conductivity type. The resistor further comprises a first and second contact for coupling the resistor to further circuitry. The first and second contacts are each coupled to both the first well and the second well.

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