公开(公告)号：US10566423B2

公开(公告)日：2020-02-18

申请号：US15396558

申请日：2016-12-31

Applicant: NXP B.V.

Inventor： Mahmoud Shehab Mohammad Al-Sa'di ,  Johannes Josephus Theodorus Marinus Donkers ,  Petrus Hubertus Cornelis Magnee ,  Ihor Brunets ,  Anurag Vohra ,  Jan Willem Slotboom

IPC: H01L29/10 ,  H01L27/02 ,  H01L29/06 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor switch device for switching an RF signal and a method of making the same. The device includes a first semiconductor region having a first conductivity type. The device also includes a source region and a drain region located in the first semiconductor region. The source region and the drain region have a second conductivity type. The second conductivity type is different to the first conductivity type. The device further includes a gate separating the source region from the drain region. The device also includes at least one sinker region having the second conductivity type. Each sinker region is connectable to an external potential for drawing minority carriers away from the source and drain regions to reduce a leakage current at junctions between the source and drain regions and the first semiconductor region.

公开(公告)号：US10158002B2

公开(公告)日：2018-12-18

申请号：US15678021

申请日：2017-08-15

Applicant: NXP B.V.

Inventor： Mahmoud Al-sa'di ,  Petrus Magnee ,  Johannes Donkers ,  Ihor Brunets ,  Joost Melai

IPC: H01L29/66 ,  H01L21/265 ,  H01L29/78

Abstract: A method of making a semiconductor switch device and a semiconductor switch device made according to the method. The method includes depositing a gate dielectric on a major surface of a substrate. The method also includes depositing and patterning a gate electrode on the gate dielectric. The method further includes depositing an oxide to cover the top surface and sidewall(s) of the gate electrode. The method also includes, after depositing the oxide, performing a first ion implantation process at a first implantation dosage for forming a lightly doped drain region of the switch device. The method further includes forming sidewall spacers on the sidewall(s) of the gate electrode. The method also includes performing a second ion implantation process at a second implantation dosage for forming a source region and a drain region of the semiconductor switch device. The second implantation dosage is greater than the first implantation dosage.

公开(公告)号：US10825900B2

公开(公告)日：2020-11-03

申请号：US16002841

申请日：2018-06-07

Applicant: NXP B.V.

Inventor： Mahmoud Shehab Mohammad Al-Sa'di ,  Petrus Hubertus Cornelis Magnee ,  Ihor Brunets ,  Jan Willem Slotboom ,  Tony Vanhoucke

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/78 ,  H01L29/417 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/08

Abstract: A semiconductor switch device and a method of making the same. The device includes a semiconductor substrate having a major surface. The device also includes a first semiconductor region located in the substrate beneath the major surface. The device includes an elongate gate located on the major surface. The device also includes a source region and a drain region located in the first semiconductor region adjacent respective first and second elongate edges of the gate. The device also includes electrical contacts for the source and drain regions. The contacts include at least two contacts located on either the source region or the drain region, which are spaced apart along a direction substantially parallel the elongate edges of the gate. The device further includes an isolation region located between the at least two contacts. The isolation region extends through the source/drain region from the major surface to the first semiconductor region.

公开(公告)号：US20190019867A1

公开(公告)日：2019-01-17

申请号：US16002841

申请日：2018-06-07

Applicant: NXP B.V.

Inventor： Mahmoud Shehab Mohammad Al-Sa'di ,  Petrus Hubertus Cornelis Magnee ,  Ihor Brunets ,  Jan Willem Slotboom ,  Tony Vanhoucke

IPC: H01L29/10 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08

Abstract: A semiconductor switch device and a method of making the same. The device includes a semiconductor substrate having a major surface. The device also includes a first semiconductor region located in the substrate beneath the major surface. The device includes an elongate gate located on the major surface. The device also includes a source region and a drain region located in the first semiconductor region adjacent respective first and second elongate edges of the gate. The device also includes electrical contacts for the source and drain regions. The contacts include at least two contacts located on either the source region or the drain region, which are spaced apart along a direction substantially parallel the elongate edges of the gate. The device further includes an isolation region located between the at least two contacts. The isolation region extends through the source/drain region from the major surface to the first semiconductor region.

公开(公告)号：US20180053833A1

公开(公告)日：2018-02-22

申请号：US15678021

申请日：2017-08-15

Applicant: NXP B.V.

Inventor： Mahmoud Al-sa'di ,  Petrus Magnee ,  Johannes Donkers ,  Ihor Brunets ,  Joost Melai

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/265

CPC classification number: H01L29/6659 ,  H01L21/265 ,  H01L29/6656 ,  H01L29/7833

Abstract: A method of making a semiconductor switch device and a semiconductor switch device made according to the method. The method includes depositing a gate dielectric on a major surface of a substrate. The method also includes depositing and patterning a gate electrode on the gate dielectric. The method further includes depositing an oxide to cover the top surface and sidewall(s) of the gate electrode. The method also includes, after depositing the oxide, performing a first ion implantation process at a first implantation dosage for forming a lightly doped drain region of the switch device. The method further includes forming sidewall spacers on the sidewall(s) of the gate electrode. The method also includes performing a second ion implantation process at a second implantation dosage for forming a source region and a drain region of the semiconductor switch device. The second implantation dosage is greater than the first implantation dosage.

公开(公告)号：US20170221994A1

公开(公告)日：2017-08-03

申请号：US15396558

申请日：2016-12-31

Applicant: NXP B.V.

Inventor： Mahmoud Shehab Mohammad Al-Sa'di ,  Johannes Josephus Theodorus Marinus Donkers ,  Petrus Hubertus Cornelis Magnee ,  Ihor Brunets ,  Anurag Vohra ,  Jan Willem Slotboom

IPC: H01L29/10 ,  H01L29/06 ,  H01L29/78 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/08 ,  H01L29/66

CPC classification number: H01L29/1095 ,  H01L21/823437 ,  H01L27/0222 ,  H01L27/088 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/1087 ,  H01L29/66568 ,  H01L29/78

Abstract: A semiconductor switch device for switching an RF signal and a method of making the same. The device includes a first semiconductor region having a first conductivity type. The device also includes a source region and a drain region located in the first semiconductor region. The source region and the drain region have a second conductivity type. The second conductivity type is different to the first conductivity type. The device further includes a gate separating the source region from the drain region. The device also includes at least one sinker region having the second conductivity type. Each sinker region is connectable to an external potential for drawing minority carriers away from the source and drain regions to reduce a leakage current at junctions between the source and drain regions and the first semiconductor region.