公开(公告)号：US20250046651A1

公开(公告)日：2025-02-06

申请号：US18228934

申请日：2023-08-01

Applicant: NXP B.V.

Inventor： Saumitra Raj Mehrotra ,  Gerben Boon ,  Gerrit Willem Nijland ,  James Gordon Boyd ,  Ronghua Zhu ,  Todd Roggenbauer

IPC: H01L21/765 ,  H01L23/52

Abstract: A method and apparatus are disclosed for an integrated circuit having a high voltage tub including a buried layer of a first conductivity type formed in a substrate of a second conductivity type, a central region of the first conductivity type formed in the substrate in contact with the buried layer, a first floating isolation trench formed in the substrate to surround the central region and to extend down to and surround the buried layer, a second floating isolation trench formed in the substrate around the first isolation trench, a shallow ring region of the first conductivity type formed in the substrate between the first floating isolation trench and the second floating isolation trench, a first conductive interconnect structure for electrically shorting the central region to the shallow ring region, and a second conductive interconnect structure for electrically shorting the first floating isolation trench to the second floating isolation trench.