公开(公告)号：US20240128316A1

公开(公告)日：2024-04-18

申请号：US18473950

申请日：2023-09-25

Applicant: NXP B.V.

Inventor： Saumitra Raj Mehrotra ,  Ronghua Zhu ,  Todd Roggenbauer

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L29/0649 ,  H01L21/76224 ,  H01L29/0623

Abstract: A semiconductor device comprising a substrate having a first conductivity type, the substrate having a top surface and a bottom surface, a first buried layer disposed in the substrate at a first depth from the top surface, wherein the first buried layer has a second conductivity type and a first doping concentration, a second buried layer adjacent and surrounding the first buried layer at the first depth, wherein the second buried layer has the second conductivity type and a second doping concentration, wherein the second doping concentration is less than the first doping concentration, and an isolation trench disposed in the substrate and surrounding the second buried layer, wherein the isolation trench extends from the top surface of the substrate to a second depth, the second depth exceeding the first depth.

公开(公告)号：US20250046651A1

公开(公告)日：2025-02-06

申请号：US18228934

申请日：2023-08-01

Applicant: NXP B.V.

Inventor： Saumitra Raj Mehrotra ,  Gerben Boon ,  Gerrit Willem Nijland ,  James Gordon Boyd ,  Ronghua Zhu ,  Todd Roggenbauer

IPC: H01L21/765 ,  H01L23/52

Abstract: A method and apparatus are disclosed for an integrated circuit having a high voltage tub including a buried layer of a first conductivity type formed in a substrate of a second conductivity type, a central region of the first conductivity type formed in the substrate in contact with the buried layer, a first floating isolation trench formed in the substrate to surround the central region and to extend down to and surround the buried layer, a second floating isolation trench formed in the substrate around the first isolation trench, a shallow ring region of the first conductivity type formed in the substrate between the first floating isolation trench and the second floating isolation trench, a first conductive interconnect structure for electrically shorting the central region to the shallow ring region, and a second conductive interconnect structure for electrically shorting the first floating isolation trench to the second floating isolation trench.