公开(公告)号：US20170133303A1

公开(公告)日：2017-05-11

申请号：US15336763

申请日：2016-10-27

Applicant: NXP B.V.

Inventor： Jeroen Croon ,  Coenraad Cornelis Tak

IPC: H01L23/495 ,  H01L23/552 ,  H01L23/522 ,  H01L23/498

CPC classification number: H01L29/778 ,  H01L23/495 ,  H01L23/49562 ,  H01L23/49805 ,  H01L23/552 ,  H01L25/0655 ,  H01L29/2003 ,  H01L29/7786 ,  H01L29/78 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48237 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device and a method of making the same. The device includes a substrate mounted on a carrier, the substrate comprising a High Electron Mobility Transistor (HEMT) having a source, a gate and a drain. The carrier comprises an electrically conductive shielding portion for providing shielding against electromagnetic interference associated with switching of the device during operation. The electrically conductive shielding portion is electrically isolated from the source and from the backside of the substrate.