公开(公告)号：US09136061B2

公开(公告)日：2015-09-15

申请号：US13953539

申请日：2013-07-29

Applicant: NXP B.V.

Inventor： Olivier Tesson ,  Laure Rolland du Roscoat

IPC: H01L29/93 ,  H01G7/06 ,  H01L27/08 ,  H01L23/482 ,  H01L29/66 ,  H01L27/02 ,  H01L49/02

CPC classification number: H01G7/06 ,  H01L23/4824 ,  H01L27/0207 ,  H01L27/0808 ,  H01L27/0811 ,  H01L28/86 ,  H01L29/66174 ,  H01L29/93 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A varactor comprises a substrate having sets of gate units each having parallel gate strips. The gate units are located such that the gate strips of neighboring gate units are oriented transverse to each other. An electrically conducting gate connection layer comprises gate connection units comprising parallel gate connection strips located over the gate strips, and a cathode connection frame around each of the gate connection units. A first electrically conductive anode layer comprises first layer anode strips located parallel to the gate connection strips and connected to alternate gate connection strips, and a first anode connection frame connected to the anode strips. A second electrically conductive anode layer comprises anode strips located parallel to the gate connection strips and connected to opposite alternate gate connection strips, and a second anode connection frame connected to the second layer anode strips.

Abstract translation: 变容二极管包括具有各自具有平行栅极条的栅极单元组的衬底。 栅极单元被定位成使得相邻栅极单元的栅极条彼此横向定向。 导电栅极连接层包括栅极连接单元，栅极连接单元包括位于栅极条上的并联栅极连接条，以及围绕每个栅极连接单元的阴极连接框架。 第一导电阳极层包括平行于栅极连接条并连接到交替栅极连接条的第一层阳极条和连接到阳极条的第一阳极连接框架。 第二导电阳极层包括平行于栅极连接条并连接到相对的交替栅极连接条的阳极条，以及连接到第二层阳极条的第二阳极连接框架。

公开(公告)号：US09391214B2

公开(公告)日：2016-07-12

申请号：US14635018

申请日：2015-03-02

Applicant: NXP B.V.

Inventor： Olivier Tesson ,  Mathieu Perin ,  Laure Rolland du Roscoat

IPC: H01L29/93 ,  H03B5/12 ,  H01L29/66 ,  H01L27/08 ,  H01L29/94 ,  H01L29/423 ,  H01L23/482

CPC classification number: H01L29/93 ,  H01L23/4824 ,  H01L27/0808 ,  H01L27/0811 ,  H01L29/423 ,  H01L29/66174 ,  H01L29/94 ,  H01L2924/0002 ,  H03B5/124 ,  H03B5/1243 ,  H01L2924/00

Abstract: A MOS varactor structure comprising a semiconductor body having a well region and a plurality of gate electrodes and a plurality of cathode electrodes arranged over the well region, wherein the gate electrodes comprise elongate pads, and the plurality of cathode contacts are connected by a cathode connection pattern, the cathode connection pattern comprising a plurality of arms, each of the plurality of arms arranged to extend over a part of a respective gate electrode pad.

Abstract translation: 一种MOS变容二极管结构，包括具有阱区和多个栅电极的半导体本体和布置在阱区上的多个阴极，其中栅电极包括细长焊盘，并且多个阴极触点通过阴极连接 阴极连接图案包括多个臂，所述多个臂中的每一个布置成在相应的栅电极焊盘的一部分上延伸。

公开(公告)号：US20150255630A1

公开(公告)日：2015-09-10

申请号：US14635018

申请日：2015-03-02

Applicant: NXP B.V.

Inventor： Olivier Tesson ,  Mathieu Perin ,  Laure Rolland du Roscoat

IPC: H01L29/93 ,  H01L29/423

CPC classification number: H01L29/93 ,  H01L23/4824 ,  H01L27/0808 ,  H01L27/0811 ,  H01L29/423 ,  H01L29/66174 ,  H01L29/94 ,  H01L2924/0002 ,  H03B5/124 ,  H03B5/1243 ,  H01L2924/00

Abstract: A MOS varactor structure comprising a semiconductor body having a well region and a plurality of gate electrodes and a plurality of cathode electrodes arranged over the well region, wherein the gate electrodes comprise elongate pads, and the plurality of cathode contacts are connected by a cathode connection pattern, the cathode connection pattern comprising a plurality of arms, each of the plurality of arms arranged to extend over a part of a respective gate electrode pad.

Abstract translation: 一种MOS变容二极管结构，包括具有阱区和多个栅电极的半导体本体和布置在阱区上的多个阴极，其中栅电极包括细长焊盘，并且多个阴极触点通过阴极连接 阴极连接图案包括多个臂，所述多个臂中的每一个布置成在相应的栅电极焊盘的一部分上延伸。

公开(公告)号：US20140036406A1

公开(公告)日：2014-02-06

申请号：US13953539

申请日：2013-07-29

Applicant: NXP B.V.

Inventor： Olivier Tesson ,  Laure Rolland du Roscoat

IPC: H01G7/06

CPC classification number: H01G7/06 ,  H01L23/4824 ,  H01L27/0207 ,  H01L27/0808 ,  H01L27/0811 ,  H01L28/86 ,  H01L29/66174 ,  H01L29/93 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A varactor comprises a substrate having sets of gate units each having parallel gate strips. The gate units are located such that the gate strips of neighbouring gate units are oriented transverse to each other. An electrically conducting gate connection layer comprises gate connection units comprising parallel gate connection strips located over the gate strips, and a cathode connection frame around each of the gate connection units. A first electrically conductive anode layer comprises first layer anode strips located parallel to the gate connection strips and connected to alternate gate connection strips, and a first anode connection frame connected to the anode strips. A second electrically conductive anode layer comprises anode strips located parallel to the gate connection strips and connected to opposite alternate gate connection strips, and a second anode connection frame connected to the second layer anode strips.

Abstract translation: 变容二极管包括具有各自具有平行栅极条的栅极单元组的衬底。 栅极单元被定位成使得相邻栅极单元的栅极条彼此横向定向。 导电栅极连接层包括栅极连接单元，栅极连接单元包括位于栅极条上的并联栅极连接条，以及围绕每个栅极连接单元的阴极连接框架。 第一导电阳极层包括平行于栅极连接条并连接到交替栅极连接条的第一层阳极条和连接到阳极条的第一阳极连接框架。 第二导电阳极层包括平行于栅极连接条并连接到相对的交替栅极连接条的阳极条，以及连接到第二层阳极条的第二阳极连接框架。