公开(公告)号：US20130154050A1

公开(公告)日：2013-06-20

申请号：US13687172

申请日：2012-11-28

Applicant: NXP B.V.

Inventor： Piet Wessels ,  Nico Berckmans ,  Khin Hoong Lim ,  Michael John Ben Bolt ,  Jerome Guillaume Anna Dubois ,  Naveen Agrawal ,  Gaurav Singh Bisht ,  Jayaraj Thillaigovindan ,  Jie Liao

IPC: H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76224 ,  H01L21/76283 ,  H01L29/0649

Abstract: Disclosed is an integrated circuit die comprising an active substrate including a plurality of components laterally separated from each other by respective isolation structures, at least some of the isolation structures carrying a further component, wherein the respective portions of the active substrate underneath the isolation structures carrying said further components are electrically insulated from said components. A method of manufacturing such an IC die is also disclosed.

Abstract translation: 公开了一种集成电路管芯，其包括有源衬底，所述有源衬底包括通过相应的隔离结构彼此横向分离的多个部件，所述隔离结构中的至少一些承载另外的部件，其中所述有源衬底的相应部分在所述隔离结构之下承载 所述另外的部件与所述部件电绝缘。 还公开了制造这种IC芯片的方法。

公开(公告)号：US08847347B2

公开(公告)日：2014-09-30

申请号：US13687172

申请日：2012-11-28

Applicant: NXP B.V.

Inventor： Piet Wessels ,  Nico Berckmans ,  Khin Hoong Lim ,  Michael John Ben Bolt ,  Jerome Guillaume Anna Dubois ,  Naveen Agrawal ,  Gaurav Singh Bisht ,  Jayaraj Thillaigovindan ,  Jie Liao

IPC: H01L29/00 ,  H01L21/762 ,  H01L29/06

CPC classification number: H01L21/76224 ,  H01L21/76283 ,  H01L29/0649

Abstract: Disclosed is an integrated circuit die comprising an active substrate including a plurality of components laterally separated from each other by respective isolation structures, at least some of the isolation structures carrying a further component, wherein the respective portions of the active substrate underneath the isolation structures carrying said further components are electrically insulated from said components. A method of manufacturing such an IC die is also disclosed.

Abstract translation: 公开了一种集成电路管芯，其包括有源衬底，所述有源衬底包括通过相应的隔离结构彼此横向分离的多个部件，所述隔离结构中的至少一些承载另外的部件，其中所述有源衬底的相应部分在所述隔离结构之下承载 所述另外的部件与所述部件电绝缘。 还公开了制造这种IC芯片的方法。