Semiconductor apparatus and manufacturing method of the same
    3.
    发明申请
    Semiconductor apparatus and manufacturing method of the same 有权
    半导体装置及其制造方法

    公开(公告)号:US20090230442A1

    公开(公告)日:2009-09-17

    申请号:US12382281

    申请日:2009-03-12

    IPC分类号: H01L29/78

    摘要: Provided is a semiconductor apparatus including a substrate region, an active region on the substrate region, a gate pattern on the active region, and first and second impurities-doped regions along both edges of the active region that do not overlap the gate pattern. The length of the first and second impurities-doped regions in the horizontal direction may be shorter than in the vertical direction. The first and second impurities-doped regions may be formed to be narrow along both edges of the active region so as not to overlap the gate pattern.

    摘要翻译: 提供了一种半导体装置,其包括衬底区域,衬底区域上的有源区域,有源区域上的栅极图案,以及不与栅极图案重叠的有源区域沿着两个边缘的第一和第二杂质掺杂区域。 第一和第二杂质掺杂区域在水平方向上的长度可以比​​在垂直方向上短。 第一和第二杂质掺杂区域可以形成为沿着有源区域的两个边缘窄,以便不与栅极图案重叠。