公开(公告)号：US20100296344A1

公开(公告)日：2010-11-25

申请号：US12805501

申请日：2010-08-03

申请人： Won-joo KIM ,  Tae-hee LEE ,  Jae-woong HYUN ,  Yoon-dong PARK

发明人： Won-joo KIM ,  Tae-hee LEE ,  Jae-woong HYUN ,  Yoon-dong PARK

IPC分类号： G11C16/04

CPC分类号： G11C16/34

摘要： Methods of operating nonvolatile memory devices are provided. In a method of operating a nonvolatile memory device including a plurality of memory cells, recorded data is stabilized by inducing a boosting voltage on a channel of a memory cell in which the recorded data is recorded. The memory cell is selected from a plurality of memory cells and the boosting voltage on the channel of the selected memory cell is induced by a channel voltage of at least one memory cell connected to the selected memory cell.

公开(公告)号：US20080159013A1

公开(公告)日：2008-07-03

申请号：US11978578

申请日：2007-10-30

申请人： Jae-woong HYUN ,  Kyoung-lae CHO ,  Kyu-charn PARK ,  Yoon-dong PARK ,  Choong-ho LEE ,  Sung-jae BYUN

发明人： Jae-woong HYUN ,  Kyoung-lae CHO ,  Kyu-charn PARK ,  Yoon-dong PARK ,  Choong-ho LEE ,  Sung-jae BYUN

IPC分类号： G11C7/00

CPC分类号： G11C11/5628 ,  G11C16/10 ,  G11C2211/5642

摘要： Provided in one example embodiment, a method of programming n bits of data to a semiconductor memory device may include outputting a first bit of data written in a memory cell from a first latch, storing the first bit of the data to a third latch, storing a second bit of the data to the first latch, outputting the second bit of the data from the first latch, storing the second bit of the data to the second latch, and writing the second bit of the data stored in the second latch to the memory cell with reference to a data storage state of the first bit of the data stored in the third latch.

摘要翻译： 在一个示例性实施例中提供了一种将半位数据数据编程到半导体存储器件的方法可以包括从第一锁存器输出写入存储器单元中的第一位数据，将第一位数据存储到第三锁存器，存储 将数据的第二位输出到第一锁存器，从第一锁存器输出数据的第二位，将数据的第二位存储到第二锁存器，以及将存储在第二锁存器中的数据的第二位写入到 参考存储在第三锁存器中的数据的第一位的数据存储状态的存储器单元。