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17 条记录 (耗时 0.023 秒)

    SEMICONDUCTOR ON GLASS SUBSTRATE WITH STIFFENING LAYER AND PROCESS OF MAKING THE SAME
    1.
    发明申请
    SEMICONDUCTOR ON GLASS SUBSTRATE WITH STIFFENING LAYER AND PROCESS OF MAKING THE SAME 有权
    具有强化层的玻璃基板上的半导体及其制造方法

    公开(公告)号：US20130130473A1

    公开(公告)日：2013-05-23

    申请号：US13714792

    申请日：2012-12-14

    申请人： Nadia Ben Mohamed ,  Ta-Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

    发明人： Nadia Ben Mohamed ,  Ta-Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

    IPC分类号： H01L21/762

    CPC分类号： H01L29/02 ,  H01L21/185 ,  H01L21/762 ,  H01L21/76254

    摘要： A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

    摘要翻译： 一种半导体玻璃衬底，其具有相对较硬（例如相对较高的杨氏模量为125或更高）的加强层或者放置在硅膜和玻璃之间的层，以消除否则在表面上形成的峡谷和针孔 在离子注入薄膜转移过程中转移的硅膜。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。

    Semiconductor on glass substrate with stiffening layer and process of making the same
    2.
    发明授权
    Semiconductor on glass substrate with stiffening layer and process of making the same 有权
    玻璃基板上的半导体具有加强层和制造相同的工艺

    公开(公告)号：US08357974B2

    公开(公告)日：2013-01-22

    申请号：US12827582

    申请日：2010-06-30

    申请人： Nadia Ben Mohamed ,  Ta Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

    发明人： Nadia Ben Mohamed ,  Ta Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

    IPC分类号： H01L29/786

    CPC分类号： H01L29/02 ,  H01L21/185 ,  H01L21/762 ,  H01L21/76254

    摘要： A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

    摘要翻译： 一种半导体玻璃衬底，其具有相对较硬（例如相对较高的杨氏模量为125或更高）的加强层或者放置在硅膜和玻璃之间的层，以消除否则在表面上形成的峡谷和针孔 在离子注入薄膜转移过程中转移的硅膜。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。

    Process of making semiconductor on glass substrates with a stiffening layer
    3.
    发明授权
    Process of making semiconductor on glass substrates with a stiffening layer 有权
    在具有加强层的玻璃基板上制造半导体的工艺

    公开(公告)号：US08518799B2

    公开(公告)日：2013-08-27

    申请号：US13714792

    申请日：2012-12-14

    申请人： Nadia Ben Mohamed ,  Ta-Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

    发明人： Nadia Ben Mohamed ,  Ta-Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

    IPC分类号： H01L21/30

    CPC分类号： H01L29/02 ,  H01L21/185 ,  H01L21/762 ,  H01L21/76254

    摘要： A process of making semiconductor-on-glass substrates having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer between the silicon film and the glass in an ion implantation thin film transfer process by depositing a stiffening layer or layers on one of the donor wafer or the glass substrate in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

    摘要翻译： 在离子注入薄膜转移工艺中，通过将硬化层或层沉积在硅膜和玻璃之间在半导体玻璃基板上具有相对刚性（例如相对较高的杨氏模量为125或更高）的硬化层 一个施主晶片或玻璃基板，以消除在薄膜转移过程中在转移的硅膜的表面中形成的峡谷和针孔。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。

    SEMICONDUCTOR ON GLASS SUBSTRATE WITH STIFFENING LAYER AND PROCESS OF MAKING THE SAME
    4.
    发明申请
    SEMICONDUCTOR ON GLASS SUBSTRATE WITH STIFFENING LAYER AND PROCESS OF MAKING THE SAME 有权
    具有强化层的玻璃基板上的半导体及其制造方法

    公开(公告)号：US20120001293A1

    公开(公告)日：2012-01-05

    申请号：US12827582

    申请日：2010-06-30

    申请人： Nadia Ben Mohamed ,  Ta Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

    发明人： Nadia Ben Mohamed ,  Ta Ko Chuang ,  Jeffrey Scott Cites ,  Daniel Delprat ,  Alex Usenko

    IPC分类号： H01L29/02 ,  H01L21/762

    CPC分类号： H01L29/02 ,  H01L21/185 ,  H01L21/762 ,  H01L21/76254

    摘要： A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

    摘要翻译： 一种半导体玻璃衬底，其具有相对较硬（例如相对较高的杨氏模量为125或更高）的加强层或者放置在硅膜和玻璃之间的层，以消除否则在表面上形成的峡谷和针孔 在离子注入薄膜转移过程中转移的硅膜。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。