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1.发明申请SEMICONDUCTOR ON GLASS SUBSTRATE WITH STIFFENING LAYER AND PROCESS OF MAKING THE SAME 有权具有强化层的玻璃基板上的半导体及其制造方法公开(公告)号：US20130130473A1
公开(公告)日：2013-05-23
申请号：US13714792
申请日：2012-12-14
IPC分类号： H01L21/762
CPC分类号： H01L29/02 , H01L21/185 , H01L21/762 , H01L21/76254
摘要： A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.
摘要翻译： 一种半导体玻璃衬底，其具有相对较硬（例如相对较高的杨氏模量为125或更高）的加强层或者放置在硅膜和玻璃之间的层，以消除否则在表面上形成的峡谷和针孔 在离子注入薄膜转移过程中转移的硅膜。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。
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2.发明授权Semiconductor on glass substrate with stiffening layer and process of making the same 有权玻璃基板上的半导体具有加强层和制造相同的工艺公开(公告)号：US08357974B2
公开(公告)日：2013-01-22
申请号：US12827582
申请日：2010-06-30
IPC分类号： H01L29/786
CPC分类号： H01L29/02 , H01L21/185 , H01L21/762 , H01L21/76254
摘要： A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.
摘要翻译： 一种半导体玻璃衬底，其具有相对较硬（例如相对较高的杨氏模量为125或更高）的加强层或者放置在硅膜和玻璃之间的层，以消除否则在表面上形成的峡谷和针孔 在离子注入薄膜转移过程中转移的硅膜。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。
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3.发明授权公开(公告)号：US08518799B2
公开(公告)日：2013-08-27
申请号：US13714792
申请日：2012-12-14
IPC分类号： H01L21/30
CPC分类号： H01L29/02 , H01L21/185 , H01L21/762 , H01L21/76254
摘要： A process of making semiconductor-on-glass substrates having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer between the silicon film and the glass in an ion implantation thin film transfer process by depositing a stiffening layer or layers on one of the donor wafer or the glass substrate in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.
摘要翻译： 在离子注入薄膜转移工艺中，通过将硬化层或层沉积在硅膜和玻璃之间在半导体玻璃基板上具有相对刚性（例如相对较高的杨氏模量为125或更高）的硬化层 一个施主晶片或玻璃基板，以消除在薄膜转移过程中在转移的硅膜的表面中形成的峡谷和针孔。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。
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4.发明申请SEMICONDUCTOR ON GLASS SUBSTRATE WITH STIFFENING LAYER AND PROCESS OF MAKING THE SAME 有权具有强化层的玻璃基板上的半导体及其制造方法公开(公告)号：US20120001293A1
公开(公告)日：2012-01-05
申请号：US12827582
申请日：2010-06-30
IPC分类号： H01L29/02 , H01L21/762
CPC分类号： H01L29/02 , H01L21/185 , H01L21/762 , H01L21/76254
摘要： A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.
摘要翻译： 一种半导体玻璃衬底，其具有相对较硬（例如相对较高的杨氏模量为125或更高）的加强层或者放置在硅膜和玻璃之间的层，以消除否则在表面上形成的峡谷和针孔 在离子注入薄膜转移过程中转移的硅膜。 新的加强层可以由诸如氮化硅的材料形成，其也用作有效阻挡钠和其它有害杂质从玻璃基板渗透到硅膜中的有效屏障。
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5.发明授权Method of configuring a process to obtain a thin layer with a low density of holes 有权配置工艺以获得具有低密度孔的薄层的方法公开(公告)号：US07485545B2
公开(公告)日：2009-02-03
申请号：US11328061
申请日：2006-01-10
申请人： Nadia Ben Mohamed , Eric Neyret , Daniel Delprat
发明人： Nadia Ben Mohamed , Eric Neyret , Daniel Delprat
IPC分类号： H01L21/302
CPC分类号： H01L21/76224 , H01L21/76254
摘要： A method for configuring a process for treating a semiconductor wafer. A minimum layer thickness of a transferred layer to be provided is determined to obtain a processed layer that has a preselected target thickness and target maximum density of through holes that extend completely therethrough, by conducting a predetermined finishing sequence of operations that improve the surface quality of the layer. The minimum thickness is determined such that the density of through holes remains below the target maximum density after each operation in the finishing sequence.
摘要翻译： 一种用于配置半导体晶片处理工艺的方法。 确定要提供的转移层的最小层厚度，以获得具有预选的目标厚度和通过其完全延伸的通孔的目标最大密度的处理层，通过进行预定的整理操作顺序来提高表面质量 层。 确定最小厚度，使得在整理顺序中的每个操作之后，通孔的密度保持低于目标最大密度。
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公开(公告)号：US08349703B2
公开(公告)日：2013-01-08
申请号：US12525493
申请日：2007-11-23
CPC分类号： H01L21/2007 , H01L21/02052
摘要： The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 Å in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.
摘要翻译： 本发明涉及一种形成结构的方法，该结构包括从施主衬底转移到第二衬底上的半导体材料的薄层，其中两种不同的原子种类在一定条件下共注入到施主衬底中，以便产生弱化区 限定待传输的薄层。 植入两种不同的原子物质，使得它们的峰在施主衬底中具有小于200的偏移，并且在粗糙化至少一个结合表面之后将衬底粘合在一起。
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公开(公告)号：US20100093152A1
公开(公告)日：2010-04-15
申请号：US12525493
申请日：2007-11-23
IPC分类号： H01L21/30
CPC分类号： H01L21/2007 , H01L21/02052
摘要： The invention relates to a method of forming a structure comprising a thin layer of semiconductor material transferred from a donor substrate onto a second substrate, wherein two different atomic species are co-implanted under certain conditions into the donor substrate so as to create a weakened zone delimiting the thin layer to be transferred. The two different atomic species are implanted so that their peaks have an offset of less than 200 Å in the donor substrate, and the substrates are bonded together after roughening at least one of the bonding surfaces.
摘要翻译： 本发明涉及一种形成结构的方法，该结构包括从施主衬底转移到第二衬底上的半导体材料的薄层，其中两种不同的原子种类在一定条件下共注入到施主衬底中，以便产生弱化区 限定待传输的薄层。 植入两种不同的原子物质，使得它们的峰在施主衬底中具有小于200的偏移，并且在粗糙化至少一个结合表面之后将衬底粘合在一起。
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公开(公告)号：US20060141755A1
公开(公告)日：2006-06-29
申请号：US11328061
申请日：2006-01-10
申请人： Nadia Ben Mohamed , Eric Neyret , Daniel Delprat
发明人： Nadia Ben Mohamed , Eric Neyret , Daniel Delprat
IPC分类号： H01L21/20
CPC分类号： H01L21/76224 , H01L21/76254
摘要： A method for configuring a process for treating a semiconductor wafer. A minimum layer thickness of a transferred layer to be provided is determined to obtain a processed layer that has a preselected target thickness and target maximum density of through holes that extend completely therethrough, by conducting a predetermined finishing sequence of operations that improve the surface quality of the layer. The minimum thickness is determined such that the density of through holes remains below the target maximum density after each operation in the finishing sequence.
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9.发明授权公开(公告)号：US08088671B2
公开(公告)日：2012-01-03
申请号：US12529482
申请日：2008-03-18
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： A method of detaching two substrates at the embrittlement zone situated at a given depth of one of the two substrates. The method includes a separation annealing step implemented in a furnace, wherein the annealing includes a first phase during which the temperature changes along an upgrade allowing a high temperature to be reached and annealing at this high temperature to be stabilized, and a second phase during which the temperature changes along a downgrade, at the end of which the furnace is opened to unload the substrates from the furnace. The second phase is regulated so as to minimize temperature inhomogeneities such as cleavage defects at the detached surfaces of the substrates when the furnace is opened.
摘要翻译： 在位于两个基板之一的给定深度的脆化区处分离两个基板的方法。 该方法包括在炉中实现的分离退火步骤，其中退火包括第一阶段，在该阶段期间温度沿升级变化，允许达到高温并在该高温下进行退火以使其稳定，在第二阶段期间 温度沿着降级而变化，其末端打开炉子以从炉中卸载基板。 调节第二相以便在炉子打开时使温度不均匀性最小化，例如在基板的分离表面处的裂纹缺陷。
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10.发明授权Thin layer transfer method utilizing co-implantation to reduce blister formation and to surface roughness 有权薄层转移方法利用共同植入来减少气泡形成和表面粗糙度公开(公告)号：US07326628B2
公开(公告)日：2008-02-05
申请号：US11181405
申请日：2005-07-13
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/26506
摘要： A method for producing a semiconductor structure by conducting controlled co-implanting of at least first and second different atomic species into a donor substrate to create an embrittlement zone which defines a thin layer of donor material to be transferred. Implantation energies are selected so that the first and second species are respectively distributed in the donor wafer according to a repartition profile that presents a spreading zone in which each species is mainly distributed at a maximum concentration peak. The implantation doses and energies of the first and second species are selected such that the second species is implanted deeper in the embrittlement zone than the first species spreading zone. The donor substrate is detached at the embrittlement zone to transfer the thin layer to the support substrate while minimizing blister formation in and surface roughness of the transferred layer. Preferably, the implantation dose of the first species is between about 40 to 60 percent of all implantation doses. This method is preferably utilized for forming or producing SeOI (Semiconductor On Insulator) structures.
摘要翻译： 一种用于通过将至少第一和第二不同原子物质的受控共同植入进入施主衬底以产生限定待转移的施主材料的薄层的脆化区来制造半导体结构的方法。 选择植入能量，使得第一和第二物质分别分布在施主晶片中，根据重新分布分布，其呈现扩散区，其中每个物质主要以最大浓度峰分布。 选择第一种和第二种的植入剂量和能量，使得第二种类在脆化区中比第一物种扩散区更深地植入。 在脆化区分离施主衬底以将薄层转移到支撑衬底，同时最小化转移层的起泡和表面粗糙度。 优选地，第一种类的植入剂量是所有植入剂量的约40至60％。 该方法优选用于形成或制造SeOI（半导体绝缘体）结构。
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