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    Proportional micromechanical device
    2.
    发明授权
    Proportional micromechanical device 有权
    比例微机械装置

    公开(公告)号：US06761420B2

    公开(公告)日：2004-07-13

    申请号：US10024963

    申请日：2001-12-18

    申请人： Nadim I. Maluf ,  Kirt R. Williams ,  Bert P. van Drieënhuizen ,  Edward Nelson Fuller ,  Richard J. Barron

    发明人： Nadim I. Maluf ,  Kirt R. Williams ,  Bert P. van Drieënhuizen ,  Edward Nelson Fuller ,  Richard J. Barron

    IPC分类号： B60T836

    CPC分类号： F16K99/0001 ,  B81B3/0024 ,  F15C5/00 ,  F16K99/0011 ,  F16K99/0044 ,  F16K2099/0074 ,  F16K2099/008 ,  F16K2099/0098 ,  Y10T137/0396

    摘要： The present invention provides a proportional microvalve having a first, second and third layer, and having high aspect ratio geometries. The first layer defines a cavity with inlet and outlet ports. The second layer, doped to have a low resistivity and bonded between the first and third layers, defines a cavity having a flow area to permit fluid flow between the inlet and outlet ports. The second layer further defines an actuatable displaceable member, and one or more thermal actuators for actuating the displaceable member to a position between and including an open and a closed position to permit or occlude fluid flow. The third layer provides one wall of the cavity and provides electrical contacts for electrically heating the thermally expandable actuators. The thermal actuators and the displaceable member have high aspect ratios and are formed by deep reactive ion etching such that they are displaceable in the plane of the second layer while being very stiff out of the plane. Thus, both actuation and displacement of the displaceable member are in the plane of the layer.

    摘要翻译： 本发明提供具有第一层，第二层和第三层并具有高纵横比几何形状的比例微型阀。 第一层限定具有入口和出口的空腔。 掺杂为具有低电阻率并且接合在第一和第三层之间的第二层限定了具有允许流体在入口和出口之间流动的流动面积的空腔。 第二层进一步限定可致动的可移动构件，以及一个或多个热致动器，用于将可移动构件致动到打开和关闭位置之间并包括打开位置和关闭位置，以允许或阻塞流体流动。 第三层提供腔的一个壁，并提供用于电加热可热膨胀致动器的电触点。 热致动器和可移位构件具有高纵横比，并且通过深反应离子蚀刻形成，使得它们可在第二层的平面中移位，同时非常刚性地离开平面。 因此，可移动构件的致动和位移都在该层的平面内。

    Proportional micromechanical valve
    3.
    发明授权
    Proportional micromechanical valve 有权
    比例微机械阀

    公开(公告)号：US07367359B2

    公开(公告)日：2008-05-06

    申请号：US11075057

    申请日：2005-03-07

    申请人： Nadim I. Maluf ,  Kirt R. Williams ,  Bert P. Van Drieenhuizen ,  Edward Nelson Fuller ,  Richard J. Barron

    发明人： Nadim I. Maluf ,  Kirt R. Williams ,  Bert P. Van Drieenhuizen ,  Edward Nelson Fuller ,  Richard J. Barron

    IPC分类号： F15C1/04

    CPC分类号： F15C5/00 ,  B81B3/0024 ,  F16K99/0001 ,  F16K99/0011 ,  F16K99/0013 ,  F16K99/0034 ,  F16K99/0044 ,  F16K2099/0074 ,  F16K2099/008 ,  F16K2099/0098 ,  Y10T137/0396 ,  Y10T137/2213 ,  Y10T137/2224 ,  Y10T137/8242

    摘要： The present invention provides a proportional microvalve having a first, second and third layer, and having high aspect ratio geometries. The first layer defines a cavity with inlet and outlet ports. The second layer, doped to have a low resistivity and bonded between the first and third layers, defines a cavity having a flow area to permit fluid flow between the inlet and outlet ports. The second layer further defines an actuatable displaceable member, and one or more thermal actuators for actuating the displaceable member to a position between and including an open and a closed position to permit or occlude fluid flow. The third layer provides one wall of the cavity and provides electrical contacts for electrically heating the thermally expandable actuators. The thermal actuators and the displaceable member have high aspect ratios and are formed by deep reactive ion etching such that they are displaceable in the plane of the second layer while being very stiff out of the plane. Thus, both actuation and displacement of the displaceable member are in the plane of the layer.

    摘要翻译： 本发明提供具有第一层，第二层和第三层并具有高纵横比几何形状的比例微型阀。 第一层限定具有入口和出口的空腔。 掺杂为具有低电阻率并且接合在第一和第三层之间的第二层限定了具有允许流体在入口和出口之间流动的流动面积的空腔。 第二层进一步限定可致动的可移动构件，以及一个或多个热致动器，用于将可移动构件致动到打开和关闭位置之间并包括打开位置和关闭位置，以允许或阻塞流体流动。 第三层提供腔的一个壁，并提供用于电加热可热膨胀致动器的电触点。 热致动器和可移位构件具有高纵横比，并且通过深反应离子蚀刻形成，使得它们可在第二层的平面中移位，同时非常刚性地离开平面。 因此，可移动构件的致动和位移都在该层的平面内。

    Miniature gauge pressure sensor using silicon fusion bonding and back etching
    5.
    发明授权
    Miniature gauge pressure sensor using silicon fusion bonding and back etching 失效

    公开(公告)号：US6038928A

    公开(公告)日：2000-03-21

    申请号：US944733

    申请日：1997-10-06

    申请人： Nadim I. Maluf ,  John R. Logan ,  Gertjan van Sprakelaar

    发明人： Nadim I. Maluf ,  John R. Logan ,  Gertjan van Sprakelaar

    IPC分类号： G01L9/00 ,  G01L9/06 ,  G01L9/12

    CPC分类号： G01L9/0042

    摘要： A gauge or differential pressure sensor has a base portion having walls which define a cavity within the base portion and a diaphragm portion positioned over the cavity. The base portion comprises silicon; the diaphragm portion comprises silicon; the substrate has a passageway from a surface of the substrate into the chamber; the walls of the cavity form an angle with the diaphragm of no more than ninety degrees; and the chamber has a depth of at least about 5 microns. Preferably, the pressure sensor has a lip within the passageway which prevents an adhesive used to glue the sensor to a base from flowing to the diaphragm and fouling it. The pressure sensor is made by forming a cavity in a first wafer, fusion bonding a second wafer over the first wafer in an oxidizing environment, and using the thin oxide formed when fusion bonding the wafers as an etch stop when opening the cavity to the atmosphere. Etch conditions are selected to form the preferred lip in the passageway. The pressure sensor has improved accuracy and reliability as well as small size.

    Quantum lithography mask and fabrication method
    6.
    发明授权
    Quantum lithography mask and fabrication method 失效
    量子光刻掩模及其制作方法

    公开(公告)号：US5135609A

    公开(公告)日：1992-08-04

    申请号：US549187

    申请日：1990-07-06

    申请人： R. Fabian W. Pease ,  Nadim I. Maluf

    发明人： R. Fabian W. Pease ,  Nadim I. Maluf

    IPC分类号： G03F1/38 ,  G03F1/50 ,  G03F1/68 ,  G03F7/00 ,  H01J37/317

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/38 ,  G03F1/50 ,  G03F1/68 ,  G03F7/0035 ,  H01J37/3174 ,  H01J2237/31788

    摘要： Thin film masks with precisely located and positioned features are manufactured using a methodology herein called quantum lithography. A thin film layer, such as a chromium film, is deposited on a substrate such as quartz glass. Then, a set of precisely located dividing lines is defined in the thin film layer. The dividing lines are spaced in accordance with a predefined coordinate system and intersect so as to define tiles between the dividing lines. An electron beam pattern generator may be used to generate a large number of identical masks having a thin film with precisely located dividing lines. These masks will each be customized by subsequent processing steps. Each such mask is customized by selectively identifying a subset of the tiles and removing the selected subset of tiles to form a mask pattern in the thin film layer. The resulting pattern has very precisely located edges because the edges correspond to dividing lines formed using a precision patterning system, such an electron beam pattern generator. However, the actual light blocking pattern of the mask can be defined using a much lower accuracy pattern generator. An alternate embodiment of the invention uses a quantized additive process. A set of precisely located boundary lines are formed on a substrate to form a generic mask. The generic mask is customized by removing a subset of the boundary lines, and then selectively depositing a masking material inside the closed regions defined by the remaining boundary lines.

    摘要翻译： 使用本文称为量子光刻的方法制造具有精确定位和定位特征的薄膜掩模。 诸如铬膜的薄膜层沉积在诸如石英玻璃的基板上。 然后，在薄膜层中限定一组精确定位的分割线。 划分线根据预定义的坐标系间隔，并相交，以便在划分线之间限定瓦片。 可以使用电子束图案发生器来产生具有精确定位的分割线的具有薄膜的大量相同掩模。 这些面罩将通过后续处理步骤进行定制。 通过选择性地识别瓦片的子集并去除所选择的瓦片子集以在薄膜层中形成掩模图案来定制每个这样的掩模。 所得到的图案具有非常精确地定位的边缘，因为边缘对应于使用精密图案形成系统形成的分割线，例如电子束图案发生器。 然而，掩模的实际遮光图案可以使用更低精度的图案发生器来定义。 本发明的替代实施例使用量化的加法过程。 在基板上形成一组精确定位的边界线以形成通用掩模。 通过去除边界线的子集来定制通用掩模，然后在由剩余边界线限定的闭合区域内选择性地沉积掩模材料。

    Miniature gauge pressure sensor using silicon fusion bonding and back etching
    7.
    发明授权
    Miniature gauge pressure sensor using silicon fusion bonding and back etching 有权
    微型压力传感器采用硅熔接和背面蚀刻

    公开(公告)号：US06629465B1

    公开(公告)日：2003-10-07

    申请号：US09449009

    申请日：1999-11-24

    申请人： Nadim I. Maluf ,  John R. Logan ,  Gertjan van Sprakelaar

    发明人： Nadim I. Maluf ,  John R. Logan ,  Gertjan van Sprakelaar

    IPC分类号： G01L906

    CPC分类号： G01L9/0042

    摘要： A gauge or differential pressure sensor has a base portion having walls which define a cavity within the base portion and a diaphragm portion positioned over the cavity. The base portion comprises silicon; the diaphragm portion comprises silicon; the substrate has a passageway from a surface of the substrate into the chamber; the walls of the cavity form an angle with the diaphragm of no more than ninety degrees; and the chamber has a depth of at least about 5 microns. Preferably, the pressure sensor has a lip within the passageway which prevents an adhesive used to glue the sensor to a base from flowing to the diaphragm and fouling it. The pressure sensor is made by forming a cavity in a first wafer, fusion bonding a second wafer over the first wafer in an oxidizing environment, and using the thin oxide formed when fusion bonding the wafers as an etch stop when opening the cavity to the atmosphere. Etch conditions are selected to form the preferred lip in the passageway. The pressure sensor has improved accuracy and reliability as well as small size.

    摘要翻译： 压力传感器或差压传感器具有基部，该基部具有在基部内限定空腔的壁和位于空腔上方的隔膜部分。 基部包括硅; 隔膜部分包括硅; 衬底具有从衬底的表面到室的通道; 空腔的壁与隔膜形成不大于九十度的角度; 并且腔室具有至少约5微米的深度。 优选地，压力传感器在通道内具有唇缘，其防止用于将传感器粘合到基座上的粘合剂流动到隔膜并使其污染。 压力传感器通过在第一晶片中形成空腔，在氧化环境中将第二晶片熔合在第一晶片上，并且当将晶片作为蚀刻停止时将形成的薄氧化物作为蚀刻停止来打开空腔 。 选择蚀刻条件以在通道中形成优选的唇缘。 压力传感器具有提高的精度和可靠性以及小尺寸。

    Discrete wavelength spectrometer
    8.
    发明授权
    Discrete wavelength spectrometer 失效
    离散波长光谱仪

    公开(公告)号：US5731874A

    公开(公告)日：1998-03-24

    申请号：US709605

    申请日：1996-09-09

    申请人： Nadim I. Maluf

    发明人： Nadim I. Maluf

    IPC分类号： G01J3/28 ,  H01L27/144

    CPC分类号： H01L27/1446 ,  G01J3/02 ,  G01J3/0259 ,  G01J3/2803

    摘要： A diffraction grating, diffraction structure or Fresnel zone device is formed on a first substrate for diffracting light components of different wavelengths. An array of detectors is formed on a second substrate for detecting different wavelength components diffracted where the second substrate is spaced apart from the grating, structure or device to form a spectrometer. Spectrometers sensitive to the particular spectral lines may be used for detecting the presence of substances. The spectral resolution at such spectral lines may be increased relative to other regions to enhance the sensitivity of detection. This is done by inverse Fourier transform of the desired discrete spectrum to obtain a desired transmission function and by half-toning the aperture function.

    摘要翻译： 在第一基板上形成衍射光栅，衍射结构或菲涅耳带装置，用于衍射不同波长的光分量。 检测器阵列形成在第二基板上，用于检测衍射的不同波长分量，其中第二基板与光栅，结构或装置间隔开以形成光谱仪。 对特定谱线敏感的光谱仪可用于检测物质的存在。 在这样的谱线处的光谱分辨率可以相对于其它区域增加，以增强检测的灵敏度。 这是通过所需离散频谱的傅立叶逆变换完成的，以获得期望的传输函数，并通过半色调孔径函数。