公开(公告)号：US08563095B2

公开(公告)日：2013-10-22

申请号：US12724396

申请日：2010-03-15

申请人： Nagarajan Rajagopalan ,  Xinhai Han ,  Ryan Yamase ,  Ji Ae Park ,  Shamik Patel ,  Thomas Nowak ,  Zhengjiang “David” Cui ,  Mehul Naik ,  Heung Lak Park ,  Ran Ding ,  Bok Hoen Kim

发明人： Nagarajan Rajagopalan ,  Xinhai Han ,  Ryan Yamase ,  Ji Ae Park ,  Shamik Patel ,  Thomas Nowak ,  Zhengjiang “David” Cui ,  Mehul Naik ,  Heung Lak Park ,  Ran Ding ,  Bok Hoen Kim

IPC分类号： H05H1/24 ,  C23C16/34

CPC分类号： H01L21/02068 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/56 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/291 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/119 ,  H01L2224/11901 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1358 ,  H01L2224/13583 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.

摘要翻译： 描述了在衬底的特征上形成包括氮化硅的钝化层的方法。 在沉积方法的第一阶段中，将包含含硅气体和含氮气体的介电沉积气体引入工艺区域并通电以沉积氮化硅层。 在第二阶段中，将具有不同于介电沉积气体的组成不同的处理气体引入处理区并通电以处理氮化硅层。 第一和第二阶段可以执行多次。