公开(公告)号：US20180047709A1

公开(公告)日：2018-02-15

申请号：US15793325

申请日：2017-10-25

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chen-Hua Yu ,  Mirng-Ji Lii ,  Chung-Shi Liu ,  Ming-Da Cheng

IPC: H01L25/065 ,  H01L23/498 ,  H01L25/00 ,  H01L23/00 ,  H01L25/10

CPC classification number: H01L25/0657 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49894 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/94 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/038 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05023 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05552 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05693 ,  H01L2224/11019 ,  H01L2224/1134 ,  H01L2224/11823 ,  H01L2224/11825 ,  H01L2224/1184 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/13019 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/16057 ,  H01L2224/16058 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16503 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45664 ,  H01L2224/48 ,  H01L2224/48611 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/48693 ,  H01L2224/48711 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/48793 ,  H01L2224/48811 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48893 ,  H01L2224/73204 ,  H01L2224/81009 ,  H01L2224/81026 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/83104 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/157 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/01029 ,  H01L2924/01006

Abstract: Embodiments concern Package-On-Package (PoP) structures including stud bulbs and methods of forming PoP structures. According to an embodiment, a structure includes a first substrate, stud bulbs, a die, a second substrate, and electrical connectors. The stud bulbs are coupled to a first surface of the first substrate. The die is attached to the first surface of the first substrate. The electrical connectors are coupled to the second substrate, and respective ones of the electrical connectors are coupled to respective ones of the stud bulbs.

公开(公告)号：US20150048495A1

公开(公告)日：2015-02-19

申请号：US14379961

申请日：2012-10-01

Applicant: HITACHI CHEMICAL COMPANY, LTD.

Inventor： Kazutaka Honda ,  Akira Nagai ,  Makoto Satou

IPC: C09J11/06 ,  C08K5/092 ,  H01L23/00 ,  C09J163/00

CPC classification number: C09J11/06 ,  B23K35/3613 ,  B23K35/3618 ,  B23K35/362 ,  C08K5/092 ,  C09J163/00 ,  H01L21/563 ,  H01L23/295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L2224/03825 ,  H01L2224/0401 ,  H01L2224/051 ,  H01L2224/05111 ,  H01L2224/05116 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05575 ,  H01L2224/0558 ,  H01L2224/056 ,  H01L2224/05611 ,  H01L2224/05616 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11825 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13575 ,  H01L2224/1358 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/13639 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/16145 ,  H01L2224/16148 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/17181 ,  H01L2224/271 ,  H01L2224/27416 ,  H01L2224/27436 ,  H01L2224/27848 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/29387 ,  H01L2224/2939 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73104 ,  H01L2224/81011 ,  H01L2224/81121 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/81895 ,  H01L2224/81907 ,  H01L2224/831 ,  H01L2224/83191 ,  H01L2224/83203 ,  H01L2224/83855 ,  H01L2224/83862 ,  H01L2224/9205 ,  H01L2224/92122 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H05K3/305 ,  H05K3/3436 ,  H05K2201/0367 ,  H05K2201/10977 ,  Y02P70/613 ,  H01L2924/00012 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/8385 ,  H01L2924/00 ,  C08L63/00 ,  H01L2224/27 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01029 ,  H01L2224/11 ,  H01L2924/0001

Abstract: An adhesive for a semiconductor, comprising an epoxy resin, a curing agent, and a compound having a group represented by the following formula (1): wherein R1 represents an electron-donating group.

Abstract translation: 一种用于半导体的粘合剂，包括环氧树脂，固化剂和具有由下式（1）表示的基团的化合物：其中R1表示给电子基团。

公开(公告)号：US08441124B2

公开(公告)日：2013-05-14

申请号：US12769768

申请日：2010-04-29

Applicant: Yi-Wen Wu ,  Cheng-Chung Lin ,  Chien Ling Hwang ,  Chung-Shi Liu

Inventor： Yi-Wen Wu ,  Cheng-Chung Lin ,  Chien Ling Hwang ,  Chung-Shi Liu

IPC: H01L23/48 ,  H01L23/52

CPC classification number: H01L23/49811 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05541 ,  H01L2224/05568 ,  H01L2224/05582 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05671 ,  H01L2224/05681 ,  H01L2224/05687 ,  H01L2224/10145 ,  H01L2224/11002 ,  H01L2224/1112 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/11849 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13007 ,  H01L2224/13023 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13123 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13181 ,  H01L2224/13551 ,  H01L2224/13561 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/1358 ,  H01L2224/13582 ,  H01L2224/13644 ,  H01L2224/13647 ,  H01L2224/13655 ,  H01L2224/13664 ,  H01L2224/13686 ,  H01L2224/13687 ,  H01L2224/13688 ,  H01L2224/1369 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/814 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/07025 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3841 ,  H01L2924/0105 ,  H01L2224/11 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/00 ,  H01L2224/05552

Abstract: A sidewall protection structure is provided for covering at least a portion of a sidewall surface of a bump structure, in which a protection structure on the sidewalls of a Cu pillar and a surface region of an under-bump-metallurgy (UBM) layer is formed of at least one non-metal material layers, for example a dielectric material layer, a polymer material layer, or combinations thereof.

Abstract translation: 提供了一种侧壁保护结构，用于覆盖凸块结构的侧壁表面的至少一部分，其中形成有Cu柱的侧壁上的保护结构和凸起下 - 冶金（UBM）层的表面区域 至少一个非金属材料层，例如介电材料层，聚合物材料层或其组合。

公开(公告)号：US08232194B2

公开(公告)日：2012-07-31

申请号：US13273917

申请日：2011-10-14

Applicant: John Trezza

Inventor： John Trezza

IPC: H01L21/44 ,  H01L21/4763

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L24/11 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2224/1358 ,  H01L2224/13609 ,  H01L2224/16 ,  H01L2224/24226 ,  H01L2224/75305 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06531 ,  H01L2225/06534 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

Abstract: A method of creating a semiconductor chip having a substrate, a doped semiconductor material abutting the substrate and a device pad at an outer side of the doped semiconductor material involves creating a via through at least a portion of the substrate, the via having a periphery and a bottom at a location and depth sufficient to bring the via into proximity with the device pad but be physically spaced apart from the device pad, introducing an electrically conductive material into the via, and connecting the electrically conductive material to a signal source so the signal will deliberately be propagated from the electrically conductive material to the device pad without any direct electrical connection existing between the electrically conductive material and the device pad.

Abstract translation: 一种制造半导体芯片的方法，该半导体芯片具有衬底，与衬底相邻的掺杂半导体材料和在掺杂半导体材料的外侧的器件焊盘，包括通过至少部分衬底产生通孔，所述通孔具有外围和 在足够的位置和深度处的底部，以使通孔靠近设备衬垫，但是物理地与器件衬垫隔开，将导电材料引入通孔，并将导电材料连接到信号源，使得信号 将有意地从导电材料传播到器件焊盘，而不会在导电材料和器件焊盘之间存在任何直接的电连接。

公开(公告)号：US08197626B2

公开(公告)日：2012-06-12

申请号：US13087209

申请日：2011-04-14

Applicant: John Trezza ,  Ross Frushour

Inventor： John Trezza ,  Ross Frushour

IPC: B32B37/00

CPC classification number: H01L24/11 ,  H01L21/4853 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/427 ,  H01L23/48 ,  H01L23/481 ,  H01L23/488 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/552 ,  H01L23/66 ,  H01L24/02 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/75 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68345 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2223/6616 ,  H01L2223/6622 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11912 ,  H01L2224/13012 ,  H01L2224/13021 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/1358 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2224/16146 ,  H01L2224/16237 ,  H01L2224/24226 ,  H01L2224/45111 ,  H01L2224/75 ,  H01L2224/75305 ,  H01L2224/81001 ,  H01L2224/81011 ,  H01L2224/81054 ,  H01L2224/81136 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81204 ,  H01L2224/81825 ,  H01L2224/81894 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06531 ,  H01L2225/06534 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2225/06593 ,  H01L2225/06596 ,  H01L2924/00013 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/18308 ,  H01S2301/176 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An apparatus for use with multiple individual chips having a rigid plate, and a deformable membrane located on the plate, the deformable membrane having a thickness sufficient to allow the deformable membrane to peripherally conform to each of the individual multiple chips irrespective of any difference in height among the multiple individual chips and to prevent each of the multiple individual chips from moving in a lateral direction, the deformable membrane being configured to uniformly transfer a vertical force, applied to the rigid plate, to the chips so as to bring, under pressure, a bonding surface of each individual chip into contact with a bonding surface of an element to which the individual chips will be bonded during a connect and release cycle without causing damage to the individual chips or bonding surface.

Abstract translation: 一种用于具有刚性板的多个单独芯片的装置和位于板上的可变形膜，该可变形膜具有足够的厚度，以允许可变形膜周向地符合每个单独的多个芯片，而与高度的任何差异无关 在多个单个芯片中，并且为了防止多个单独芯片中的每一个沿横向方向移动，可变形膜被构造成均匀地将施加到刚性板的垂直力传递到芯片，以便在压力下， 每个单独芯片的接合表面在连接和释放循环期间与单个芯片将被接合的元件的接合表面接触，而不会损坏单个芯片或接合表面。

公开(公告)号：US08154131B2

公开(公告)日：2012-04-10

申请号：US11329481

申请日：2006-01-10

Applicant: John Trezza ,  John Callahan ,  Gregory Dudoff

Inventor： John Trezza ,  John Callahan ,  Gregory Dudoff

IPC: H01L23/52

CPC classification number: H01L24/11 ,  H01L21/4853 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/427 ,  H01L23/48 ,  H01L23/481 ,  H01L23/488 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/552 ,  H01L23/66 ,  H01L24/02 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/75 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68345 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2223/6616 ,  H01L2223/6622 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11912 ,  H01L2224/13012 ,  H01L2224/13021 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/1358 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2224/16146 ,  H01L2224/16237 ,  H01L2224/24226 ,  H01L2224/45111 ,  H01L2224/75 ,  H01L2224/75305 ,  H01L2224/81001 ,  H01L2224/81011 ,  H01L2224/81054 ,  H01L2224/81136 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81204 ,  H01L2224/81825 ,  H01L2224/81894 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06531 ,  H01L2225/06534 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2225/06593 ,  H01L2225/06596 ,  H01L2924/00013 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/18308 ,  H01S2301/176 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor chip, having IC pads, the semiconductor chip having a device, electrically connected to at least one electrical contact through the IC pad, the electrical contact having a height and a cross sectional profile, through the height, configured to facilitate penetration of at least a portion of the electrical contact into a malleable contact on a second semiconductor chip.

Abstract translation: 一种半导体芯片，其具有IC焊盘，所述半导体芯片具有与所述IC焊盘至少一个电触头电连接的器件，所述电触头具有穿过所述高度的高度和横截面轮廓，所述高度和横截面轮廓被构造成促进穿透 在第二半导体芯片上的电触点的至少一部分成为可延展的触点。

公开(公告)号：US20110147932A1

公开(公告)日：2011-06-23

申请号：US12966699

申请日：2010-12-13

Applicant: John Trezza ,  John Callahan ,  Gregory Dudoff

Inventor： John Trezza ,  John Callahan ,  Gregory Dudoff

IPC: H01L23/495 ,  H01L21/60

CPC classification number: H01L24/11 ,  H01L21/4853 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/427 ,  H01L23/48 ,  H01L23/481 ,  H01L23/488 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/552 ,  H01L23/66 ,  H01L24/02 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/75 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68345 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2223/6616 ,  H01L2223/6622 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11912 ,  H01L2224/13012 ,  H01L2224/13021 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/1358 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2224/16146 ,  H01L2224/16237 ,  H01L2224/24226 ,  H01L2224/45111 ,  H01L2224/75 ,  H01L2224/75305 ,  H01L2224/81001 ,  H01L2224/81011 ,  H01L2224/81054 ,  H01L2224/81136 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81204 ,  H01L2224/81825 ,  H01L2224/81894 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06531 ,  H01L2225/06534 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2225/06593 ,  H01L2225/06596 ,  H01L2924/00013 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/18308 ,  H01S2301/176 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An electrical connection between two chips includes an IC pad on a first chip, an IC pad on a second chip, a first barrier metal over the IC pad of the first chip, a second barrier metal over the IC pad of the second chip, a malleable electrically conductive metal, different from the barrier metals, trapped between the first barrier metal and the second barrier metal, the first barrier metal, the malleable conductive metal and the second barrier metal forming a complete electrically conductive path between the IC pad of the first chip and the IC pad of the second chip.

Abstract translation: 两个芯片之间的电连接包括第一芯片上的IC焊盘，第二芯片上的IC焊盘，第一芯片的IC焊盘上的第一势垒金属，第二芯片的IC焊盘上的第二阻挡金属， 与第一阻挡金属和第二阻挡金属之间的阻挡金属不同的可延展的导电金属，第一阻挡金属，有韧性的导电金属和第二阻挡金属在第一和第二阻挡金属的IC垫之间形成完整的导电路径 芯片和第二芯片的IC焊盘。

公开(公告)号：US20110042802A1

公开(公告)日：2011-02-24

申请号：US12805203

申请日：2010-07-19

Applicant: Fumiyoshi Kawashiro

Inventor： Fumiyoshi Kawashiro

IPC: H01L23/48 ,  H01L21/44

CPC classification number: H01L24/13 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/111 ,  H01L2224/11334 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13116 ,  H01L2224/1358 ,  H01L2224/48091 ,  H01L2224/812 ,  H01L2224/81801 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/0105

Abstract: A semiconductor device includes an electrode pad and an external connection terminal. The external connection terminal contains Sn equal to or more than 50 wt %, Sn and Pb equal to or more than 90 wt % in total, or Pb equal to or more than 85 wt %, and the surface thereof is coated with an Au layer. The thickness of the Au layer is preferably equal to or more than 10 nm and equal to or less than 1 μm. The weight of the Au layer is preferably equal to or less than 0.6% of the weight of the external connection terminal.

Abstract translation: 半导体器件包括电极焊盘和外部连接端子。 外部连接端子包含Sn等于或大于50重量％，Sn和Pb总计等于或大于90重量％，或等于或大于85重量％的Pb，并且其表面涂覆有Au层 。 Au层的厚度优选为10nm以上且1μm以下。 Au层的重量优选等于或小于外部连接端子的重量的0.6％。

公开(公告)号：US07854367B2

公开(公告)日：2010-12-21

申请号：US12833191

申请日：2010-07-09

Applicant: Hideaki Sakaguchi ,  Kiyoaki Iida

Inventor： Hideaki Sakaguchi ,  Kiyoaki Iida

IPC: B23K31/02

CPC classification number: H01L24/742 ,  B23K3/0623 ,  B23K2101/36 ,  H01L21/4853 ,  H01L24/13 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/11003 ,  H01L2224/11005 ,  H01L2224/11334 ,  H01L2224/13147 ,  H01L2224/1319 ,  H01L2224/13561 ,  H01L2224/1358 ,  H01L2224/13582 ,  H01L2224/136 ,  H01L2224/13655 ,  H01L2224/81192 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/3025 ,  H05K3/3478 ,  H05K2201/083 ,  H05K2201/10234 ,  H05K2203/041 ,  H05K2203/0557 ,  H05K2203/104 ,  H01L2924/014 ,  H01L2224/05599

Abstract: An apparatus for arranging magnetic solder balls includes: a stage for placing and fixing the substrate thereon; a magnet which is incorporated in the stage and is movable in parallel with a lower surface of the placed and fixed substrate so as to cause a magnetic force to act in an upward direction of the stage; and a mask frame capable of being positioned above the stage. An arranging method using this arranging apparatus is also provided. An apparatus for arranging magnetic solder balls includes: a stage for placing and fixing the substrate thereon; a mask frame capable of being positioned above the stage; and a magnetic generator which is movable above the mask frame and causes a magnetic force to act on the stage. An arranging method using this arranging apparatus is also provided.

Abstract translation: 用于布置磁性焊球的装置包括：用于在其上放置和固定基板的台; 磁体，其被并入所述平台中并且可与所述放置和固定的基板的下表面平行移动，以使磁力沿所述平台的向上方向作用; 以及能够定位在舞台上方的面罩框架。 还提供了一种使用该布置装置的布置方法。 用于布置磁性焊球的装置包括：用于在其上放置和固定基板的台; 能够定位在舞台上方的面罩框架; 以及可在掩模框架上方移动并使磁力作用在台架上的磁性发生器。 还提供了一种使用该布置装置的布置方法。

公开(公告)号：US20100197134A1

公开(公告)日：2010-08-05

申请号：US12762095

申请日：2010-04-16

Applicant: John Trezza

Inventor： John Trezza

IPC: H01L21/768

CPC classification number: H01L24/11 ,  H01L21/4853 ,  H01L21/6835 ,  H01L21/76898 ,  H01L23/427 ,  H01L23/48 ,  H01L23/481 ,  H01L23/488 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/552 ,  H01L23/66 ,  H01L24/02 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/75 ,  H01L24/81 ,  H01L25/0652 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/68345 ,  H01L2221/68363 ,  H01L2221/68368 ,  H01L2223/6616 ,  H01L2223/6622 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11912 ,  H01L2224/13012 ,  H01L2224/13021 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13166 ,  H01L2224/13184 ,  H01L2224/1358 ,  H01L2224/136 ,  H01L2224/13609 ,  H01L2224/16146 ,  H01L2224/16237 ,  H01L2224/24226 ,  H01L2224/45111 ,  H01L2224/75 ,  H01L2224/75305 ,  H01L2224/81001 ,  H01L2224/81011 ,  H01L2224/81054 ,  H01L2224/81136 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/81204 ,  H01L2224/81825 ,  H01L2224/81894 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/06531 ,  H01L2225/06534 ,  H01L2225/06541 ,  H01L2225/06555 ,  H01L2225/06589 ,  H01L2225/06593 ,  H01L2225/06596 ,  H01L2924/00013 ,  H01L2924/01002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01S5/02272 ,  H01S5/02276 ,  H01S5/0422 ,  H01S5/0425 ,  H01S5/183 ,  H01S5/18308 ,  H01S2301/176 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An integrated circuit chip includes devices formed by doping of a semiconductor on a substrate and at least one post-device formation through-chip via made up of an annulus of insulating material, an annulus of metallization bounding an outer surface of the annulus of insulating material and an annulus of electrically conductive material within the annulus of insulating material, the annulus of metallization and the annulus of electrically conductive material being electrically isolated from each another.

Abstract translation: 集成电路芯片包括通过在衬底上掺杂半导体而形成的器件以及由绝缘材料环形构成的至少一个后器件形成贯穿芯片通孔，金属化环形区域包围绝缘材料环的外表面 以及在绝缘材料的环形空间内的导电材料的环形，金属化的环形区域和导电材料的环形空间彼此电隔离。