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    Film donor device for laser induced thermal imaging
    6.
    发明授权
    Film donor device for laser induced thermal imaging 失效
    用于激光诱导热成像的薄膜供体装置

    公开(公告)号：US08613989B2

    公开(公告)日：2013-12-24

    申请号：US11511153

    申请日：2006-08-28

    申请人： Tae Min Kang ,  Jin Soo Kim ,  Mu Hyun Kim ,  Sun Hoe Kim ,  Noh Min Kwak ,  Sang Bong Lee ,  Seong Taek Lee ,  Seung Hyun Lee ,  Sok Won Noh ,  Jin Wook Seong ,  Myung Won Song ,  Yeun Joo Sung ,  Byeong Wook Yoo

    发明人： Tae Min Kang ,  Jin Soo Kim ,  Mu Hyun Kim ,  Sun Hoe Kim ,  Noh Min Kwak ,  Sang Bong Lee ,  Seong Taek Lee ,  Seung Hyun Lee ,  Sok Won Noh ,  Jin Wook Seong ,  Myung Won Song ,  Yeun Joo Sung ,  Byeong Wook Yoo

    IPC分类号： B41J2/38

    CPC分类号： B41M5/265 ,  B41M5/38221 ,  H01L51/0013

    摘要： A laser induced thermal imaging (LITI) apparatus and a method of making an electronic device using the same are disclosed. The LITI apparatus includes a chamber, a substrate support, a contact frame, and a laser source or oscillator. The LITI apparatus transfers a transferable layer from a film donor device onto a surface of an intermediate electronic device. The LITI apparatus uses a magnetic force to provide a close contact between the transferable layer and the surface of the intermediate device. The magnetic force is generated by magnetic materials formed in two components of the LITI apparatus that are spaced apart interposing transferable layer and the surface of the intermediate device. Magnets or magnetic materials are formed in the two following components of the LITI apparatus: 1) the intermediate device and the film donor device; 2) the intermediate device and the contact frame; 3) the substrate support and the film donor device; or 4) the substrate support and the contact frame.

    摘要翻译： 公开了一种激光诱导热成像（LITI）装置和使用其的电子装置的制造方法。 LITI装置包括腔室，衬底支撑件，接触框架和激光源或振荡器。 LITI装置将可转移层从成膜剂装置转移到中间电子装置的表面上。 LITI装置使用磁力来提供可转移层与中间装置的表面之间的紧密接触。 磁力由形成在LITI装置的两个部件中的磁性材料产生，该两个部件是间隔开的中间转印层和中间装置的表面。 在LITI装置的以下两个部件中形成磁体或磁性材料：1）中间装置和薄膜供体装置; 2）中间装置和接触框架; 3）基底支撑体和薄膜供体装置; 或4）衬底支撑件和接触框架。

    Laser induced thermal imaging apparatus
    7.
    发明授权
    Laser induced thermal imaging apparatus 失效
    激光感应热成像仪

    公开(公告)号：US08268657B2

    公开(公告)日：2012-09-18

    申请号：US11510997

    申请日：2006-08-28

    申请人： Tae Min Kang ,  Jin Soo Kim ,  Mu Hyun Kim ,  Sun Hoe Kim ,  Noh Min Kwak ,  Sang Bong Lee ,  Seong Taek Lee ,  Seung Hyun Lee ,  Sok Won Noh ,  Jin Wook Seong ,  Myung Won Song ,  Yeun Joo Sung ,  Byeong Wook Yoo

    发明人： Tae Min Kang ,  Jin Soo Kim ,  Mu Hyun Kim ,  Sun Hoe Kim ,  Noh Min Kwak ,  Sang Bong Lee ,  Seong Taek Lee ,  Seung Hyun Lee ,  Sok Won Noh ,  Jin Wook Seong ,  Myung Won Song ,  Yeun Joo Sung ,  Byeong Wook Yoo

    IPC分类号： G03G5/16 ,  G03C5/16 ,  G03F7/00 ,  H01L21/00 ,  H01L51/40

    CPC分类号： B41M5/265 ,  B41M5/38221 ,  H01L51/0013

    摘要： A laser induced thermal imaging (LITI) apparatus and a method of making an electronic device using the same are disclosed. The LITI apparatus includes a chamber, a substrate support, a contact frame, and a laser source or oscillator. The LITI apparatus transfers a transferable layer from a film donor device onto a surface of an intermediate electronic device. The LITI apparatus uses a magnetic force to provide a close contact between the transferable layer and the surface of the intermediate device. The magnetic force is generated by magnetic materials formed in two components of the LITI apparatus that are spaced apart interposing transferable layer and the surface of the intermediate device. Magnets or magnetic materials are formed in the two following components of the LITI apparatus: 1) the intermediate device and the film donor device; 2) the intermediate device and the contact frame; 3) the substrate support and the film donor device; or 4) the substrate support and the contact frame.

    摘要翻译： 公开了一种激光诱导热成像（LITI）装置和使用其的电子装置的制造方法。 LITI装置包括腔室，衬底支撑件，接触框架和激光源或振荡器。 LITI装置将可转移层从成膜剂装置转移到中间电子装置的表面上。 LITI装置使用磁力来提供可转移层与中间装置的表面之间的紧密接触。 磁力由形成在LITI装置的两个部件中的磁性材料产生，该两个部件是间隔开的中间转印层和中间装置的表面。 在LITI装置的以下两个部件中形成磁体或磁性材料：1）中间装置和薄膜供体装置; 2）中间装置和接触框架; 3）基底支撑体和薄膜供体装置; 或4）衬底支撑件和接触框架。

    Method for forming semiconductor device
    8.
    发明授权
    Method for forming semiconductor device 有权
    半导体器件形成方法

    公开(公告)号：US08216938B2

    公开(公告)日：2012-07-10

    申请号：US12982814

    申请日：2010-12-30

    申请人： Ki Lyoung Lee ,  Jin Soo Kim

    发明人： Ki Lyoung Lee ,  Jin Soo Kim

    IPC分类号： H01L21/44

    CPC分类号： H01L21/3086 ,  H01L27/11521

    摘要： A method for forming a semiconductor device includes forming a partition line pattern and a partition pad pattern connected to an end part of the partition line pattern over the semiconductor substrate. Spacer insulation layers are formed at sidewalls of the partition line pattern and the partition pad pattern. A gap-filling layer is formed between the spacer insulation layers. A first cutting mask pattern is formed to expose a connecting part between the partition line pattern and the partition pad pattern. The partition line pattern and the gap-filling layer adjacent to the spacer insulation layer are removed using the first cutting mask pattern as a mask. A second cutting mask pattern including a first pattern and a second pattern are formed. The spacer insulation layer is removed using the second cutting mask pattern as a mask to form a gate trench in the substrate.

    摘要翻译： 一种形成半导体器件的方法包括在半导体衬底上形成分隔线图案和与分隔线图案的端部连接的分隔垫图案。 间隔绝缘层形成在分隔线图案和分隔垫图案的侧壁处。 在间隔绝缘层之间形成间隙填充层。 形成第一切割掩模图案以暴露分隔线图案和分隔垫图案之间的连接部分。 使用第一切割掩模图案作为掩模去除与间隔绝缘层相邻的分隔线图案和间隙填充层。 形成包括第一图案和第二图案的第二切割掩模图案。 使用第二切割掩模图案作为掩模去除间隔绝缘层，以在基板中形成栅极沟槽。

    Semiconductor laser structure including quantum dot
    10.
    发明授权
    Semiconductor laser structure including quantum dot 有权
    半导体激光器结构包括量子点

    公开(公告)号：US07606284B2

    公开(公告)日：2009-10-20

    申请号：US11595470

    申请日：2006-11-09

    申请人： Dae Kon Oh ,  Jin Hong Lee ,  Jin Soo Kim ,  Sung Ui Hong ,  Ho Sang Kwack

    发明人： Dae Kon Oh ,  Jin Hong Lee ,  Jin Soo Kim ,  Sung Ui Hong ,  Ho Sang Kwack

    IPC分类号： H01S3/08

    CPC分类号： H01S5/12 ,  H01S5/1231 ,  H01S5/1243 ,  H01S5/22

    摘要： Provided is a distributed feedback semiconductor laser structure including: a first clad layer; a first ridge waveguide formed on the first clad layer; an active layer formed on the first ridge waveguide; a second ridge waveguide formed on the active layer; a second clad layer formed on the second ridge waveguide; an ohmic contact layer formed on the second clad layer; and a plurality of gratings formed in at least one of the first and second clad layers, making a predetermined angle with the first ridge waveguide or the second ridge waveguide, and periodically arranged in a longitudinal direction of the first or second ridge waveguide. As a result, a general hologram lithography process capable of mass production is applied to the present invention so that process time can be reduced. Also, a distributed feedback semiconductor laser structure using a quantum-dot active layer that does not require an additional process for obtaining a pure single-wavelength is provided.

    摘要翻译： 提供一种分布式反馈半导体激光器结构，包括：第一覆层; 形成在第一覆盖层上的第一脊状波导; 形成在第一脊波导上的有源层; 形成在有源层上的第二脊状波导; 形成在第二脊波导上的第二覆层; 形成在所述第二覆盖层上的欧姆接触层; 以及形成在所述第一和第二包层中的至少一个中的多个光栅，与所述第一脊波导或所述第二脊波导成预定的角度，并且沿所述第一或第二脊波导的纵向方向周期性地布置。 结果，能够大量生产的一般的全息图光刻工艺被应用于本发明，从而可以减少处理时间。 此外，提供了使用量子点有源层的分布式反馈半导体激光器结构，其不需要用于获得纯单波长的附加工艺。