专利检索 ap:("Nanyang Technological University") AND inv:"Peng Yu" 第 1 页

1.

发明授权
Chalcogenide film including a noble metal chalcogenide material, device including the chalcogenide film, and method of forming the chalcogenide film 有权

公开(公告)号：US10900115B2

公开(公告)日：2021-01-26

申请号：US16329569

申请日：2017-08-31

申请人： Nanyang Technological University

发明人： Xuechao Yu , Peng Yu , Qijie Wang , Zheng Liu

IPC分类号： C30B23/02 , C23C14/22 , C23C14/00 , C30B29/46 , C30B33/06 , C23C14/06 , H01L31/032 , H01L31/0272

摘要： A chalcogenide film is provided. The chalcogenide film includes a noble metal chalcogenide material having a formula MCx. M represents a noble metal. C represents a chalcogen. x is any one positive value equal to or more than 1.4 and less than 2. The chalcogenide film is configured to generate electrons and holes upon light incident on the chalcogenide film.