公开(公告)号：US20060127799A1

公开(公告)日：2006-06-15

申请号：US10537162

申请日：2003-12-02

申请人： Naotaka Kubota ,  Kiyoshi Ishikawa ,  Mitsuru Sato ,  Tasuku Matsumiya ,  Kazuhiro Fujii ,  Kenichi Sato

发明人： Naotaka Kubota ,  Kiyoshi Ishikawa ,  Mitsuru Sato ,  Tasuku Matsumiya ,  Kazuhiro Fujii ,  Kenichi Sato

IPC分类号： G03C1/76

CPC分类号： G03F7/32 ,  G03F7/0397 ,  G03F7/40

摘要： A resist pattern forming method which can prevent a fine resist pattern from collapsing in a drying step after a development treatment in case of forming a resist pattern is provided. This method comprises applying a positive resist composition comprising a resin component (A), which has an alkali-soluble unit content of less than 20 mol % and also has an acid dissociable dissolution inhibiting group, alkali solubility thereof being enhanced by action of acid, an acid generator component (B) which generates an acid under exposure, and an organic solvent (C) which dissolves the components (A) and (B) on a substrate; subjecting the resulting film to prebaking, selective exposure, post exposure baking and alkali development; performing a displacing step of displacing a liquid existing on the substrate with a displacing liquid at least one time; displacing the displacing liquid with a liquid for critical drying; and performing a drying step of drying the liquid for critical drying via a critical state.

摘要翻译： 提供了抗蚀剂图案形成方法，其可以在形成抗蚀剂图案的情况下，在显影处理之后，在干燥步骤中防止细小的抗蚀剂图案塌陷。 该方法包括涂布含有碱溶性单元含量小于20摩尔％的树脂成分（A）的正型抗蚀剂组合物，并且还具有酸解离溶解抑制基团，其碱溶性通过酸的作用而增强， 产生暴露酸的酸产生剂组分（B）和在基材上溶解组分（A）和（B）的有机溶剂（C）; 对所得膜进行预烘烤，选择性曝光，曝光后烘烤和碱显影; 执行置换步骤，用置换液体至少一次移动存在于基板上的液体; 用液体移动置换液体进行临界干燥; 并执行干燥步骤，用于通过临界状态干燥用于临界干燥的液体。

公开(公告)号：US20060063102A1

公开(公告)日：2006-03-23

申请号：US10536711

申请日：2003-12-01

申请人： Naotaka Kubota ,  Kiyoshi Ishikawa ,  Mitsuru Sato ,  Tasuku Matsumiya

发明人： Naotaka Kubota ,  Kiyoshi Ishikawa ,  Mitsuru Sato ,  Tasuku Matsumiya

IPC分类号： G03C1/76 ,  G03C1/492

CPC分类号： G03F7/32 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/40

摘要： There is provided a positive resist composition which, during resist pattern formation, can prevent the collapse of very fine resist patterns during the drying step following developing. This positive resist composition is used in a resist pattern formation method comprising a step, within the lithography process, for substituting a liquid remaining on the substrate following alkali developing with a critical drying liquid, and then drying this critical drying liquid by causing passage through a critical state. The positive resist composition comprises a resin component (A), which has an alkali-soluble unit content of less than 20 mol %, contains an acid dissociable, dissolution inhibiting group, and displays increased alkali solubility under action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C) for dissolving the components (A) and (B), and moreover, the component (A) comprises a structural unit (a1) containing an acid dissociable, dissolution inhibiting group, a structural unit (a2) containing a lactone unit, and a structural unit (a3) containing a polycyclic group with an alcoholic hydroxyl group.

摘要翻译： 提供了抗蚀剂组合物，其在抗蚀剂图案形成期间可以防止在显影之后的干燥步骤期间非常精细的抗蚀剂图案的塌陷。 该抗蚀剂组合物用于抗蚀剂图案形成方法，该方法包括以下步骤：在光刻工艺中，用临界干燥液代替碱显影后残留在基材上的液体，然后通过使其通过 临界状态。 正型抗蚀剂组合物包含具有小于20摩尔％的碱溶性单元含量的树脂组分（A），其含有酸解离溶解抑制基团，并且在酸的作用下显示出增加的碱溶解度，酸产生剂组分 （A）和（B）成分的有机溶剂（C），（A）成分含有酸解离，抑制溶解的结构单元（a1） 基团，含有内酯单元的结构单元（a2）和含有醇羟基的多环基团的结构单元（a3）。

公开(公告)号：US6083665A

公开(公告)日：2000-07-04

申请号：US273262

申请日：1999-03-22

申请人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G03F7/40

CPC分类号： G03F7/091 ,  G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： A proposal is made for the photolithographic formation of a patterned resist layer on a substrate without the troubles due to reflection of the exposure light on the substrate surface. Thus, patterning is conducted on a photo-resist laminate comprising (a) a substrate; (b) a specific anti-reflection coating layer formed on one surface of the substrate; and (c) a photoresist layer formed on the anti-reflection coating layer from a specific negative-working chemical-sensitization photoresist composition. The patterning procedure comprises the steps of: (A) exposing, pattern-wise to actinic rays, the photoresist layer of the photoresist laminate; (B) subjecting the photoresist layer to a heat treatment; (C) subjecting the photoresist layer to a development treatment to dissolve away the photoresist layer in the areas unexposed to actinic rays in step (A) so as to expose bare the anti-reflection coating layer in the areas unexposed to the actinic rays leaving a patterned resist layer in the areas exposed to the actinic rays; and (D) removing the pattern-wise exposed anti-reflection coating layer by dry etching with the patterned photoresist layer as a mask.

摘要翻译： 提出了在基板上的图案化抗蚀剂层的光刻形成，而不会由于基板表面上的曝光光的反射而引起的问题。 因此，在包含（a）基材的光致抗蚀剂层压体上进行图案化; （b）形成在所述基板的一个表面上的特定抗反射涂层; 和（c）由特定的负性化学增感光致抗蚀剂组合物形成在抗反射涂层上的光致抗蚀剂层。 图案化步骤包括以下步骤：（A）以光致抗蚀剂层压板的光致抗蚀剂层将光致抗蚀剂层以图形方式曝光于光化射线; （B）对光致抗蚀剂层进行热处理; （C）在步骤（A）中对光致抗蚀剂层进行显影处理以将光致抗蚀剂层溶解在未暴露于光化射线的区域中，以便露出未暴露于光化离子的区域中的防反射涂层 在暴露于光化射线的区域中的图案化抗蚀剂层; 和（D）通过用图案化的光致抗蚀剂层作为掩模的干蚀刻去除图案化的曝光的抗反射涂层。

公开(公告)号：US5928837A

公开(公告)日：1999-07-27

申请号：US987023

申请日：1997-12-09

申请人： Mitsuru Sato ,  Kiyoshi Ishikawa ,  Yoshiki Sugeta ,  Hiroyuki Yamazaki ,  Toshikazu Tachikawa ,  Hiroshi Komano

发明人： Mitsuru Sato ,  Kiyoshi Ishikawa ,  Yoshiki Sugeta ,  Hiroyuki Yamazaki ,  Toshikazu Tachikawa ,  Hiroshi Komano

IPC分类号： G03F7/004 ,  G03F7/038 ,  H01L21/027 ,  G03C1/492

CPC分类号： G03F7/038 ,  G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： Proposed is a novel negative-working chemical-sensitization photoresist composition used in the photolithographic patterning work for the manufacture of semiconductor devices and the like and capable of giving a patterned resist layer with high sensitivity and pattern resolution as well as excellent heat resistance and excellently orthogonal cross sectional profile of the patterned resist layer. The composition comprises, as a uniform solution:(A) 100 parts by weight of an alkali-soluble resin which is a polyhydroxystyrene-based resin having a weight-average molecular weight of at least 2000;(B) from 3 to 70 parts by weight of an acid-crosslinkable compound which is an amino resin having hydroxyalkyl and/or alkoxyalkyl groups;(C) from 0.5 to 30 parts by weight of a radiation-sensitive acid-generating compound selected from several types of specific oximesulfonate compounds; and(D) from 0.5 to 10 parts by weight of a phenolic compound, such as benzophenone compounds, having at least four hydroxyl groups in a molecule and a molecular weight smaller than 2000.

摘要翻译： 提出了用于制造半导体器件等的光刻图案化工作中的新颖的负极化学增感光致抗蚀剂组合物，并且能够提供具有高灵敏度和图案分辨率的图案化抗蚀剂层以及优异的耐热性和良好的正交 图案化抗蚀剂层的横截面轮廓。 该组合物包含作为均匀溶液：（A）100重量份作为重均分子量为至少2000的聚羟基苯乙烯类树脂的碱溶性树脂; （B）3〜70重量份作为具有羟烷基和/或烷氧基烷基的氨基树脂的酸交联性化合物; （C）0.5〜30重量份选自几种特定肟磺酸酯化合物的辐射敏感产酸化合物; 和（D）0.5〜10重量份在分子中具有至少四个羟基并且分子量小于2000的酚类化合物，例如二苯甲酮化合物。

公开(公告)号：US5789136A

公开(公告)日：1998-08-04

申请号：US626147

申请日：1996-04-05

申请人： Mitsuru Sato ,  Katsumi Oomori ,  Kiyoshi Ishikawa ,  Etsuko Iguchi ,  Fumitake Kaneko

发明人： Mitsuru Sato ,  Katsumi Oomori ,  Kiyoshi Ishikawa ,  Etsuko Iguchi ,  Fumitake Kaneko

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03C1/73

CPC分类号： G03F7/0045 ,  G03F7/038 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/126 ,  Y10S430/128

摘要： Proposed is an alkali-developable negative-working photoresist composition in the form of a solution capable of exhibiting high sensitivity and greatly improved stability of the resist layer of the composition on a substrate surface after pattern-wise exposure to actinic rays and kept for a substantial length of time before further processing. The photoresist composition comprises, as the essential ingredients, (a) an alkali-soluble resin such as a copolymer of hydroxystyrene and styrene; (b) a compound capable of releasing an acid when irradiated with actinic rays such as tris(2,3-dibromopropyl) isocyanurate; (c) a crosslinking agent selected from the group consisting of melamine resins and urea resins substituted at the N-positions by methylol groups, alkoxy methyl groups or a combination thereof; and (d) a sensitivity improver which is hexa(methoxymethyl) melamine or di(methoxymethyl) urea, each in a specified proportion.

摘要翻译： 提出了一种可显影的负性光致抗蚀剂组合物，其形式为能够显示出高灵敏度并且大大提高组合物的抗蚀剂层在图案形式暴露于光化射线之后在基材表面上的稳定性，并保持基本上 进一步处理之前的时间长短。 光致抗蚀剂组合物包含作为必要成分的（a）碱溶性树脂，例如羟基苯乙烯和苯乙烯的共聚物; （b）当用诸如三（2,3-二溴丙基）异氰脲酸酯的光化射线照射时能够释放酸的化合物; （c）选自三聚氰胺树脂和在N-位被羟甲基取代的尿素树脂的交联剂，烷氧基甲基或其组合; 和（d）灵敏度改进剂，其为六（甲氧基甲基）三聚氰胺或二（甲氧基甲基）脲，各自为特定比例。

公开(公告)号：US5908738A

公开(公告)日：1999-06-01

申请号：US18910

申请日：1998-02-05

申请人： Mitsuru Sato ,  Katsumi Oomori ,  Kiyoshi Ishikawa ,  Etsuko Iguchi ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Katsumi Oomori ,  Kiyoshi Ishikawa ,  Etsuko Iguchi ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/09 ,  G03F7/11 ,  G03F7/26 ,  H01L21/027 ,  G03C1/825

CPC分类号： G03F7/091 ,  Y10S430/117 ,  Y10S430/124

摘要： Proposed is a novel undercoating composition used in the photolithographic patterning of a photoresist layer by intervening between the substrate surface and the photoresist layer to decrease the adverse influences of the reflecting light from the substrate surface. The undercoating composition of the invention comprises (a) a melamine compound substituted by methylol groups and/or alkoxymethyl groups and (b) a polyhydroxy benzophenone compound, diphenyl sulfone compound or diphenyl sulfoxide compound, optionally, with admixture of (c) an alkali-insoluble resin of a (meth)acrylic acid ester.

摘要翻译： 提出了通过介于基板表面和光致抗蚀剂层之间用于光致抗蚀剂层的光刻图案中的新颖的底涂层组合物，以减少来自基板表面的反射光的不利影响。 本发明的底漆组合物包含（a）被羟甲基和/或烷氧基甲基取代的三聚氰胺化合物和（b）多羟基二苯甲酮化合物，二苯基砜化合物或二苯基亚砜化合物，任选地与（c） （甲基）丙烯酸酯的不溶性树脂。

公开(公告)号：US5955241A

公开(公告)日：1999-09-21

申请号：US956792

申请日：1997-10-23

申请人： Mitsuru Sato ,  Kiyoshi Ishikawa ,  Hiroyuki Yamazaki ,  Yoshiki Sugeta ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Kiyoshi Ishikawa ,  Hiroyuki Yamazaki ,  Yoshiki Sugeta ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03C1/492

CPC分类号： G03F7/038 ,  G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： The present invention provides a chemical-amplification-type negative resist composition and a method for forming a negative resist pattern using the same. The chemical-amplification-type negative resist composition comprises (A) an alkali-soluble resin, (B) an acid-generating agent, and (C) a compound capable of causing crosslinking reaction in the presence of an acid, wherein the ingredient (A) is a mixture comprising (i) a copolymer which comprises constitutional repeating units of a hydroxystyrene type, has a weight average molecular weight of 2,000 to 4,000, and has a ratio of the weight average molecular weight to the number average molecular weight falling within 1.0 to 2.0; and (ii) a hydroxystyrene homopolymer, and wherein the dissolution rate of the ingredient (A) at 23.degree. C. in a 2.38% by weight tetramethylammonium hydroxide aqueous solution falls within 80 to 300 nm/s.

摘要翻译： 本发明提供化学放大型负光刻胶组合物和使用其形成负光刻胶图案的方法。 化学增幅型负性抗蚀剂组合物包含（A）碱溶性树脂，（B）酸产生剂和（C）在酸存在下能够引起交联反应的化合物，其中成分（ A）是包含（i）包含羟基苯乙烯型结构重复单元的共聚物，其重均分子量为2,000至4,000的共聚物，并且其重均分子量与数均分子量的比率 1.0〜2.0; 和（ii）羟基苯乙烯均聚物，并且其中成分（A）在23℃在2.38重量％四甲基氢氧化铵水溶液中的溶解速率为80-300nm / s。

公开(公告)号：US5939510A

公开(公告)日：1999-08-17

申请号：US845358

申请日：1997-04-24

申请人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko

发明人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko

IPC分类号： G03F7/11 ,  C09K3/00 ,  G03F7/09 ,  H01L21/027 ,  C08G8/02 ,  C08G12/00

CPC分类号： G03F7/091

摘要： Proposed is a novel undercoating composition to form an undercoating layer interposed between the surface of a substrate and a photoresist layer with an object to decrease the adverse influences by the reflection of light on the substrate surface in the pattern-wise exposure of the photoresist layer to ultraviolet light without the undesirable phenomena of intermixing between layers and notching along with a large selectivity ratio in the etching rates between the patterned resist layer and the undercoating layer in a dry-etching treatment. The undercoating composition comprises (A) an ultraviolet absorber which is a benzophenone compound or an aromatic azomethine compound each having at least one unsubstituted or alkyl-substituted amino group on the aryl groups and (B) a crosslinking agent which is preferably a melamine compound having at least two methylol groups or alkoxymethyl groups bonded to the nitrogen atoms in a molecule in a weight proportion (A):(B) in the range from 1:1 to 1:10.

摘要翻译： 提出了一种新颖的底涂层组合物，用于形成底涂层和介于光致抗蚀剂层之间的底涂层，目的在于降低光致抗蚀剂层的图案曝光中光的反射对基板表面的不利影响 在干蚀刻处理中，在图案化的抗蚀剂层和底涂层之间的蚀刻速率方面，没有不希望的层之间的混合现象和开槽以及大的选择比。 底涂层组合物包含（A）紫外线吸收剂，其为在芳基上具有至少一个未取代或烷基取代的氨基的二苯甲酮化合物或芳族偶氮甲碱化合物，（B）优选三聚氰胺化合物的交联剂，其具有 至少两个羟甲基或分子中的氮原子以重量比（A）：（B））键合在1：1至1:10范围内的烷氧基甲基。

公开(公告)号：US5925495A

公开(公告)日：1999-07-20

申请号：US924260

申请日：1997-09-05

申请人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko ,  Toshimasa Nakayama

发明人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko ,  Toshimasa Nakayama

IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/09 ,  G03F7/11 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  G03C1/492

CPC分类号： G03F7/091 ,  G03F7/0045 ,  Y10S430/12 ,  Y10S430/122

摘要： A proposal is made for the photolithographic formation of a patterned resist layer on a substrate without the troubles due to reflection of the exposure light on the substrate surface. Thus, patterning is conducted on a photoresist laminate comprising (a) a substrate; (b) a specific anti-reflection coating layer formed on one surface of the substrate; and (c) a photoresist layer formed on the anti-reflection coating layer from a specific negative-working chemical-sensitization photoresist composition comprising an oxime sulfonate acid generating agent. The patterning procedure comprises the steps of: (A) exposing, pattern-wise to actinic rays, the photoresist layer of the photoresist laminate; (B) subjecting the photoresist layer to a heat treatment; (C) subjecting the photoresist layer to a development treatment to dissolve away the photoresist layer in the areas unexposed to actinic rays in step (A) so as to expose bare the anti-reflection coating layer in the areas unexposed to the actinic rays leaving a patterned resist layer in the areas exposed to the actinic rays; and (D) removing the pattern-wise exposed anti-reflection coating layer by dry etching with the patterned photoresist layer as a mask.

摘要翻译： 提出了在基板上的图案化抗蚀剂层的光刻形成，而不会由于基板表面上的曝光光的反射而引起的问题。 因此，在包含（a）基底的光致抗蚀剂层压件上进行图案化; （b）形成在所述基板的一个表面上的特定抗反射涂层; 以及（c）由抗反酸涂层形成的抗氧化剂层，其特征在于包含肟磺酸生成剂的特定负性化学增感光致抗蚀剂组合物。 图案化步骤包括以下步骤：（A）以光致抗蚀剂层压板的光致抗蚀剂层将光致抗蚀剂层以图形方式曝光于光化射线; （B）对光致抗蚀剂层进行热处理; （C）在步骤（A）中对光致抗蚀剂层进行显影处理以将光致抗蚀剂层溶解在未暴露于光化射线的区域中，以便露出未暴露于光化离子的区域中的防反射涂层 在暴露于光化射线的区域中的图案化抗蚀剂层; 和（D）通过用图案化的光致抗蚀剂层作为掩模的干蚀刻去除图案化的曝光的抗反射涂层。

公开(公告)号：US6087068A

公开(公告)日：2000-07-11

申请号：US271899

申请日：1999-03-18

申请人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko

发明人： Mitsuru Sato ,  Katsumi Oomori ,  Etsuko Iguchi ,  Kiyoshi Ishikawa ,  Fumitake Kaneko

IPC分类号： G03F7/11 ,  C09K3/00 ,  G03F7/09 ,  H01L21/027

CPC分类号： G03F7/091

摘要： Proposed is a novel undercoating composition to form an undercoating layer interposed between the surface of a substrate and a photoresist layer with an object to decrease the adverse influences by the reflection of light on the substrate surface in the pattern-wise exposure of the photo-resist layer to ultraviolet light without the undesirable phenomena of intermixing between layers and notching along with a large selectivity ratio in the etching rates between the patterned resist layer and the undercoating layer in a dry-etching treatment. The undercoating composition comprises (A) an ultraviolet absorber which is a benzophenone compound or an aromatic azomethine compound each having at least one unsubstituted or alkyl-substituted amino group on the aryl groups and (B) a crosslinking agent which is preferably a melamine compound having at least two methylol groups or alkoxymethyl groups bonded to the nitrogen atoms in a molecule in a weight proportion (A):(B) in the range from 1:1 to 1:10.

摘要翻译： 提出了一种新颖的底涂层组合物，用于形成底涂层和介于光致抗蚀剂层之间的底涂层，其目的是减少光抗蚀剂图案曝光中光在基板表面上的反射的不利影响 在干蚀刻处理中，在图案化的抗蚀剂层和底涂层之间的蚀刻速率方面，层间相对紫外光没有不希望的层之间的混合现象和开槽以及大的选择比。 底涂层组合物包含（A）紫外线吸收剂，其为在芳基上具有至少一个未取代或烷基取代的氨基的二苯甲酮化合物或芳族偶氮甲碱化合物，（B）优选三聚氰胺化合物的交联剂，其具有 至少两个羟甲基或分子中的氮原子以重量比（A）：（B））键合在1：1至1:10范围内的烷氧基甲基。