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    Positive resist composition
    1.
    发明申请
    Positive resist composition 审中-公开
    正抗蚀剂组成

    公开(公告)号：US20060063102A1

    公开(公告)日：2006-03-23

    申请号：US10536711

    申请日：2003-12-01

    申请人： Naotaka Kubota ,  Kiyoshi Ishikawa ,  Mitsuru Sato ,  Tasuku Matsumiya

    发明人： Naotaka Kubota ,  Kiyoshi Ishikawa ,  Mitsuru Sato ,  Tasuku Matsumiya

    IPC分类号： G03C1/76 ,  G03C1/492

    CPC分类号： G03F7/32 ,  G03F7/0397 ,  G03F7/325 ,  G03F7/40

    摘要： There is provided a positive resist composition which, during resist pattern formation, can prevent the collapse of very fine resist patterns during the drying step following developing. This positive resist composition is used in a resist pattern formation method comprising a step, within the lithography process, for substituting a liquid remaining on the substrate following alkali developing with a critical drying liquid, and then drying this critical drying liquid by causing passage through a critical state. The positive resist composition comprises a resin component (A), which has an alkali-soluble unit content of less than 20 mol %, contains an acid dissociable, dissolution inhibiting group, and displays increased alkali solubility under action of acid, an acid generator component (B) that generates acid on exposure, and an organic solvent (C) for dissolving the components (A) and (B), and moreover, the component (A) comprises a structural unit (a1) containing an acid dissociable, dissolution inhibiting group, a structural unit (a2) containing a lactone unit, and a structural unit (a3) containing a polycyclic group with an alcoholic hydroxyl group.

    摘要翻译： 提供了抗蚀剂组合物，其在抗蚀剂图案形成期间可以防止在显影之后的干燥步骤期间非常精细的抗蚀剂图案的塌陷。 该抗蚀剂组合物用于抗蚀剂图案形成方法，该方法包括以下步骤：在光刻工艺中，用临界干燥液代替碱显影后残留在基材上的液体，然后通过使其通过 临界状态。 正型抗蚀剂组合物包含具有小于20摩尔％的碱溶性单元含量的树脂组分（A），其含有酸解离溶解抑制基团，并且在酸的作用下显示出增加的碱溶解度，酸产生剂组分 （A）和（B）成分的有机溶剂（C），（A）成分含有酸解离，抑制溶解的结构单元（a1） 基团，含有内酯单元的结构单元（a2）和含有醇羟基的多环基团的结构单元（a3）。

    Method for forming resist pattern and resist pattern
    2.
    发明申请
    Method for forming resist pattern and resist pattern 审中-公开
    形成抗蚀剂图案和抗蚀剂图案的方法

    公开(公告)号：US20060127799A1

    公开(公告)日：2006-06-15

    申请号：US10537162

    申请日：2003-12-02

    申请人： Naotaka Kubota ,  Kiyoshi Ishikawa ,  Mitsuru Sato ,  Tasuku Matsumiya ,  Kazuhiro Fujii ,  Kenichi Sato

    发明人： Naotaka Kubota ,  Kiyoshi Ishikawa ,  Mitsuru Sato ,  Tasuku Matsumiya ,  Kazuhiro Fujii ,  Kenichi Sato

    IPC分类号： G03C1/76

    CPC分类号： G03F7/32 ,  G03F7/0397 ,  G03F7/40

    摘要： A resist pattern forming method which can prevent a fine resist pattern from collapsing in a drying step after a development treatment in case of forming a resist pattern is provided. This method comprises applying a positive resist composition comprising a resin component (A), which has an alkali-soluble unit content of less than 20 mol % and also has an acid dissociable dissolution inhibiting group, alkali solubility thereof being enhanced by action of acid, an acid generator component (B) which generates an acid under exposure, and an organic solvent (C) which dissolves the components (A) and (B) on a substrate; subjecting the resulting film to prebaking, selective exposure, post exposure baking and alkali development; performing a displacing step of displacing a liquid existing on the substrate with a displacing liquid at least one time; displacing the displacing liquid with a liquid for critical drying; and performing a drying step of drying the liquid for critical drying via a critical state.

    摘要翻译： 提供了抗蚀剂图案形成方法，其可以在形成抗蚀剂图案的情况下，在显影处理之后，在干燥步骤中防止细小的抗蚀剂图案塌陷。 该方法包括涂布含有碱溶性单元含量小于20摩尔％的树脂成分（A）的正型抗蚀剂组合物，并且还具有酸解离溶解抑制基团，其碱溶性通过酸的作用而增强， 产生暴露酸的酸产生剂组分（B）和在基材上溶解组分（A）和（B）的有机溶剂（C）; 对所得膜进行预烘烤，选择性曝光，曝光后烘烤和碱显影; 执行置换步骤，用置换液体至少一次移动存在于基板上的液体; 用液体移动置换液体进行临界干燥; 并执行干燥步骤，用于通过临界状态干燥用于临界干燥的液体。

    Positive type resist composition and resist pattern formation method using same
    3.
    发明授权
    Positive type resist composition and resist pattern formation method using same 有权
    正型抗蚀剂组合物和使用其的抗蚀剂图案形成方法

    公开(公告)号：US07316888B2

    公开(公告)日：2008-01-08

    申请号：US11347102

    申请日：2006-02-02

    申请人： Takeshi Iwai ,  Naotaka Kubota ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hideo Hada

    发明人： Takeshi Iwai ,  Naotaka Kubota ,  Satoshi Fujimura ,  Miwa Miyairi ,  Hideo Hada

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    摘要： There is provided a positive type resin composition comprising (A) a resin component comprising within the principal chain a structural unit derived from a (meth)acrylate ester and incorporating an acid dissociable, dissolution inhibiting group containing a polycyclic group on an ester side chain section, for which the solubility in alkali increases under the action of acid, (B) an acid generator component which generates acid on exposure, and (C) an organic solvent, wherein the component (A) comprises both a structural unit derived from a methacrylate ester and a structural unit derived from an acrylate ester. According to such a resist composition, a resist pattern can be formed which displays little surface roughness and line edge roughness on etching, and also offers excellent resolution and a wide depth of focus range.

    摘要翻译： 提供一种正型树脂组合物，其包含（A）树脂组分，其在主链内包含衍生自（甲基）丙烯酸酯的结构单元，并且在酯侧链部分上并入含有多环基团的酸解离的溶解抑制基团 （B）在暴露时产生酸的酸产生剂组分和（C）有机溶剂，其中组分（A）包含衍生自甲基丙烯酸酯的结构单元 酯和衍生自丙烯酸酯的结构单元。 根据这样的抗蚀剂组合物，可以形成抗蚀剂图案，其在蚀刻时显示出很小的表面粗糙度和线边缘粗糙度，并且还提供优异的分辨率和宽的焦深范围。

    Multilayered body for photolithographic patterning
    5.
    发明授权
    Multilayered body for photolithographic patterning 有权
    用于光刻图案的多层体

    公开(公告)号：US06455228B1

    公开(公告)日：2002-09-24

    申请号：US09641686

    申请日：2000-08-18

    申请人： Toshikazu Tachikawa ,  Fumitake Kaneko ,  Naotaka Kubota ,  Miwa Miyairi ,  Takako Hirosaki ,  Koutaro Endo

    发明人： Toshikazu Tachikawa ,  Fumitake Kaneko ,  Naotaka Kubota ,  Miwa Miyairi ,  Takako Hirosaki ,  Koutaro Endo

    IPC分类号： G03F7004

    CPC分类号： G03F7/091 ,  G03F7/0382

    摘要： Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.

    摘要翻译： 公开了一种用于光致抗蚀剂层的光刻图案的新型多层体，当多层结构在基材的表面上包含下面的不溶于水的抗反射膜时，可以从其获得具有优异横截面轮廓的图案化抗蚀剂层 和特定光致抗蚀剂组合物的负性光致抗蚀剂层，其包含：（A）100重量份的碱溶性树脂;（B）0.5至20重量份能够通过照射释放酸的鎓盐化合物 与光化射线 和（C）3至50重量份在N-位被至少一个羟烷基或烷氧基烷基取代的甘脲化合物。

    Composition for lithographic anti-reflection coating, and resist laminate using the same
    6.
    发明授权
    Composition for lithographic anti-reflection coating, and resist laminate using the same 失效
    用于光刻抗反射涂层的组合物和使用其的抗蚀层压体

    公开(公告)号：US06416930B2

    公开(公告)日：2002-07-09

    申请号：US09799554

    申请日：2001-03-07

    申请人： Kazumasa Wakiya ,  Naotaka Kubota ,  Shigeru Yokoi ,  Masakazu Kobayashi

    发明人： Kazumasa Wakiya ,  Naotaka Kubota ,  Shigeru Yokoi ,  Masakazu Kobayashi

    IPC分类号： G03F711

    CPC分类号： G03F7/091

    摘要： A composition includes a copolymer of vinylimidazole with a water-soluble film-forming monomer other than vinylimidazole, and a fluorine-containing surfactant. A resist laminate is obtained by forming an anti-reflection coating on the surface of a photoresist film, which anti-refection coating is composed of a coating solution obtained by dissolving the composition in water. The composition for lithographic anti-reflection coating has balanced compatibility with conventional photoresist compositions. By using the composition, a semiconductor device can be efficiently produced without the clogging of waste fluids in a waste fluid pipe, even when the application of the photoresist composition and the formation of the anti-reflection coating are sequentially performed using one coater. This composition is also advantageous for saving space in a clean room.

    摘要翻译： 组合物包括乙烯基咪唑与乙烯基咪唑以外的水溶性成膜单体的共聚物和含氟表面活性剂。 通过在光致抗蚀剂膜的表面上形成抗反射涂层来获得抗蚀层叠体，该抗反射涂层由通过将该组合物溶解在水中得到的涂布溶液组成。 用于光刻抗反射涂层的组合物与常规光致抗蚀剂组合物具有平衡的相容性。 通过使用该组合物，即使当使用一个涂布机顺序地进行光致抗蚀剂组合物的施加和防反射涂层的形成时，也可以有效地制造半导体装置而不会在废流体管道中堵塞废流体。 这种组合物也有利于节省洁净室中的空间。

    Method of forming resist pattern, positive resist composition, and layered product
    9.
    发明申请
    Method of forming resist pattern, positive resist composition, and layered product 有权
    形成抗蚀剂图案的方法，正型抗蚀剂组合物和层状产品

    公开(公告)号：US20060154181A1

    公开(公告)日：2006-07-13

    申请号：US10535533

    申请日：2003-12-01

    申请人： Hideo Hada ,  Miwa Miyairi ,  Naotaka Kubota ,  Takeshi Iwai

    发明人： Hideo Hada ,  Miwa Miyairi ,  Naotaka Kubota ,  Takeshi Iwai

    IPC分类号： G03C5/00

    CPC分类号： G03F7/40 ,  G03F7/0392 ,  G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    摘要： There are provided a method of forming a resist pattern that enables the resist pattern to be formed with good control of the pattern size, as well as a positive resist composition used in the method, and a layered product formed using the positive resist composition. In the above method a positive resist composition comprising a resin component (A), which contains a structural unit (a1) derived from a (meth)acrylate ester represented by a general formula (I) shown below, and displays increased alkali solubility under action of acid, and an acid generator component (B) that generates acid on exposure is applied to a substrate, a prebake is conducted, the resist composition is selectively exposed, post exposure baking (PEB) is conducted, alkali developing is then used to form a resist pattern, and the pattern size of the thus produced resist pattern is then narrowed by heat treatment.

    摘要翻译： 提供一种形成抗蚀剂图案的方法，其能够形成对图案尺寸的良好控制，以及该方法中使用的正性抗蚀剂组合物和使用正性抗蚀剂组合物形成的层叠体。 在上述方法中，含有含有由下述通式（I）表示的（甲基）丙烯酸酯衍生的结构单元（a1））的树脂成分（A）的正型抗蚀剂组合物在动作中显示出增加的碱溶解性 的酸，并且在基材上产生酸的酸发生剂组分（B）施加到基材上，进行预烘烤，选择性地暴露抗蚀剂组合物，进行曝光后烘烤（PEB），然后用碱显影形成 抗蚀剂图案，然后通过热处理使由此制得的抗蚀剂图案的图案尺寸变窄。

    Multilayered body for photolithographic patterning
    10.
    发明授权
    Multilayered body for photolithographic patterning 有权
    用于光刻图案的多层体

    公开(公告)号：US07033731B2

    公开(公告)日：2006-04-25

    申请号：US10901207

    申请日：2004-07-29

    申请人： Toshikazu Tachikawa ,  Fumitake Kaneko ,  Naotaka Kubota ,  Miwa Miyairi ,  Takako Hirosaki ,  Koutaro Endo

    发明人： Toshikazu Tachikawa ,  Fumitake Kaneko ,  Naotaka Kubota ,  Miwa Miyairi ,  Takako Hirosaki ,  Koutaro Endo

    IPC分类号： G03F7/11

    CPC分类号： G03F7/091 ,  G03F7/0382

    摘要： Disclosed is a novel multilayered body for photo-lithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.

    摘要翻译： 公开了一种用于光致抗蚀剂层的光刻图案化的新型多层体，当多层结构在基材表面上包含下面的不溶于水的抗蚀剂层时，可以从其获得具有优异横截面轮廓的图案化抗蚀剂层， 反射膜和特定光致抗蚀剂组合物的负性光致抗蚀剂层，其包含：（A）100重量份的碱溶性树脂; （B）0.5〜20重量份能够通过光化射线照射而释放酸的鎓盐化合物; 和（C）3至50重量份在N-位被至少一个羟烷基或烷氧基烷基取代的甘脲化合物。