公开(公告)号：US08093529B2

公开(公告)日：2012-01-10

申请号：US12194019

申请日：2008-08-19

申请人： Naoyuki Kofuji ,  Tsunehiko Tsubone

发明人： Naoyuki Kofuji ,  Tsunehiko Tsubone

IPC分类号： B23K10/00

CPC分类号： G01K13/00 ,  H01L21/67109 ,  H01L21/67248

摘要： A method of stably controlling the temperature of a sample placed on a sample stage to a desired temperature by estimating a sample temperature accurately, the sample stage including a refrigerant flow path to cool the sample stage, a heater to heat the sample stage, and a temperature sensor to measure the temperature of the sample stage. This method comprises the steps of: measuring in advance the variation-with-time of supply electric power to the heater, temperature of the sample, and temperature of the temperature sensor, without plasma processing; approximating the relation among the measured values using a simultaneous linear differential equation; estimating a sample temperature from the variation-with-time of sensor temperature y1, heater electric power u1, and plasma heat input by means of the Luenberger's states observer based on the simultaneous linear differential equation used for the approximation; and performing a feedback control of sample temperature using the estimated sample temperature.

摘要翻译： 通过精确地估计样品温度来稳定地将放置在样品台上的样品的温度控制到所需温度的方法，所述样品台包括用于冷却样品台的制冷剂流动路径，加热样品台的加热器和 温度传感器来测量样品台的温度。 该方法包括以下步骤：在不进行等离子体处理的情况下，预先测量供给电力与加热器的时间的变化，样品的温度和温度传感器的温度; 使用同时线性微分方程逼近测量值之间的关系; 基于用于近似的同时线性微分方程，通过Luenberger状态观测器从传感器温度y1，加热器电力u1和等离子体热输入的变化估计样本温度; 并使用估计的样品温度执行样品温度的反馈控制。

公开(公告)号：US20090310645A1

公开(公告)日：2009-12-17

申请号：US12194019

申请日：2008-08-19

申请人： Naoyuki Kofuji ,  Tsunehiko Tsubone

发明人： Naoyuki Kofuji ,  Tsunehiko Tsubone

IPC分类号： G01K17/00

CPC分类号： G01K13/00 ,  H01L21/67109 ,  H01L21/67248

摘要： A method of stably controlling the temperature of a sample placed on a sample stage to a desired temperature by estimating a sample temperature accurately, the sample stage including a refrigerant flow path to cool the sample stage, a heater to heat the sample stage, and a temperature sensor to measure the temperature of the sample stage. This method comprises the steps of: measuring in advance the variation-with-time of supply electric power to the heater, temperature of the sample, and temperature of the temperature sensor, without plasma processing; approximating the relation among the measured values using a simultaneous linear differential equation; estimating a sample temperature from the variation-with-time of sensor temperature y1, heater electric power u1, and plasma heat input by means of the Luenberger's states observer based on the simultaneous linear differential equation used for the approximation; and performing a feedback control of sample temperature using the estimated sample temperature.

摘要翻译： 通过精确地估计样品温度来稳定地将放置在样品台上的样品的温度控制到所需温度的方法，所述样品台包括用于冷却样品台的制冷剂流动路径，加热样品台的加热器和 温度传感器来测量样品台的温度。 该方法包括以下步骤：在不进行等离子体处理的情况下，预先测量供给电力与加热器的时间的变化，样品的温度和温度传感器的温度; 使用同时线性微分方程逼近测量值之间的关系; 基于用于近似的同时线性微分方程，通过Luenberger状态观测器从传感器温度y1，加热器电力u1和等离子体热输入的变化估计样本温度; 并使用估计的样品温度执行样品温度的反馈控制。

公开(公告)号：US20090065145A1

公开(公告)日：2009-03-12

申请号：US12267813

申请日：2008-11-10

申请人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Tadamitsu Kanekiyo ,  Kenetsu Yokogawa

发明人： Tooru Aramaki ,  Tsunehiko Tsubone ,  Tadamitsu Kanekiyo ,  Kenetsu Yokogawa

IPC分类号： C23F1/08

CPC分类号： H01L21/67069 ,  H01J37/32091 ,  H01J37/32192 ,  H01J37/32935 ,  H01J2237/2001 ,  H01L21/67109 ,  H01L21/67248

摘要： A plasma processing apparatus includes a processing chamber disposed within a vacuum vessel for forming therein a plasma, a sample table disposed beneath the processing chamber for mounting on its upper surface a workpiece to be processed, an electrode disposed within the sample table for allowing application of high frequency power for adjustment of a surface potential of the workpiece, a passage disposed within the sample table for causing a refrigerant to flow therein, and a control device for adjusting a temperature of the refrigerant flowing in the passage. The workpiece is processed using a plasma created within the processing chamber under application of the high frequency power. Before application of the high frequency power, the control device starts to adjust the temperature of the refrigerant based on information of the high frequency power so that it has a predetermined value.

摘要翻译： 等离子体处理装置包括设置在真空容器内用于在其中形成等离子体的处理室，设置在处理室下方的样品台，用于在其上表面上安装待处理的工件，设置在样品台内的电极， 用于调整工件的表面电位的高频电力，设置在样品台内以使制冷剂流动的通道，以及用于调节在通道中流动的制冷剂的温度的控制装置。 使用在施加高频功率的处理室内产生的等离子体处理工件。 在施加高频电力之前，控制装置基于高频功率的信息开始调节制冷剂的温度，使其具有预定值。

公开(公告)号：US20080280451A1

公开(公告)日：2008-11-13

申请号：US12073048

申请日：2008-02-28

申请人： Yutaka Ohmoto ,  Mamoru Yakushiji ,  Yutaka Kouzuma ,  Ken Yoshioka ,  Tsunehiko Tsubone

发明人： Yutaka Ohmoto ,  Mamoru Yakushiji ,  Yutaka Kouzuma ,  Ken Yoshioka ,  Tsunehiko Tsubone

IPC分类号： H01L21/3065

CPC分类号： H01L21/67109 ,  H01J2237/2001 ,  H01L21/67248

摘要： A plasma processing apparatus includes: a film which is made of an insulative material and constructs a surface of a sample stage on which a sample is put; a disk-shaped member whose upper surface is joined with the film in a lower portion of the film and which is made of a heat conductive member; heaters which are arranged in the film and arranged in a center portion and regions of its outer peripheral side of the film; coolant channels which are arranged in the disk-shaped member and in which a coolant for cooling the disk-shaped member flows; a plurality of power sources each of which adjusts an electric power to each of the heaters in the plurality of regions; and a controller which adjusts outputs from the plurality of power sources by using a result obtained by presuming a temperature of the upper surface of the disk-shaped member.

摘要翻译： 一种等离子体处理装置，包括：由绝缘材料制成的薄膜，构成放置样品的样品台的表面; 其上表面与膜接合在膜的下部并由导热构件制成的盘状构件; 加热器布置在膜中并且布置在膜的中心部分和其外周侧的区域中; 布置在盘状构件中并且用于冷却盘形构件的冷却剂流过的冷却剂通道; 多个电源，其各自调整对所述多个区域中的每个所述加热器的电力; 以及控制器，其通过使用通过假设盘状构件的上表面的温度获得的结果来调整来自多个电源的输出。

公开(公告)号：USRE39823E1

公开(公告)日：2007-09-11

申请号：US10060304

申请日：2002-02-01

申请人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

发明人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC分类号： F26B5/04

CPC分类号： H01L21/67748 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253

摘要： This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dirty-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

摘要翻译： 本发明涉及一种具有真空处理室的真空处理装置，其内部必须是干式清洁的，以及一种操作这种装置的方法。 当真空处理室被清洁脏时，虚设基板通过基板输送装置从虚设基板存储装置转移到真空处理室中，所述虚拟基板存储装置与用于存储待处理基板的存储装置一起设置在空气气氛中， 通过产生等离子体对真空处理室进行干洗。 在完成干洗之后，虚拟衬底返回到虚设衬底存储装置。 因此，仅用于清洁目的的特定机构是不必要的，并且可以使装置的结构简单。 此外，用于干洗的虚拟基板和待加工的基板不共存，可以防止由于灰尘和剩余气体而被处理的基板的污染，并且生产率可以高。

公开(公告)号：USRE39776E1

公开(公告)日：2007-08-21

申请号：US10062618

申请日：2002-02-05

申请人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

发明人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC分类号： F26B5/04

CPC分类号： H01L21/67748 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253

摘要： This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used to dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

摘要翻译： 本发明涉及一种具有真空处理室的真空处理装置，其内部必须是干式清洁的，以及一种操作这种装置的方法。 当真空处理室被干洗时，虚设基板通过基板传送装置从设置在空气气氛中的虚设基板存储装置与用于存储待处理基板的存储装置一起转移到真空处理室中， 通过产生等离子体对真空处理室进行干洗。 在完成干洗之后，虚拟衬底返回到虚设衬底存储装置。 因此，仅用于清洁目的的特定机构是不必要的，并且可以使装置的结构简单。 此外，用于干燥的虚拟基板和待加工的基板不共存，可以防止由于灰尘和剩余气体而被处理的基板的污染，并且生产率可以高。

公开(公告)号：US06880264B2

公开(公告)日：2005-04-19

申请号：US10682901

申请日：2003-10-14

申请人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

发明人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC分类号： B01J3/00 ,  B41J2/36 ,  B41J2/365 ,  C23C14/56 ,  H01L21/00 ,  H01L21/677 ,  F26B5/04

CPC分类号： H01L21/67748 ,  B01J3/006 ,  B41J2/36 ,  B41J2/365 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253 ,  H01L21/67736 ,  Y10S134/902 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14

摘要： This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

公开(公告)号：US06676805B2

公开(公告)日：2004-01-13

申请号：US10107138

申请日：2002-03-28

申请人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

发明人： Naoyuki Tamura ,  Kazue Takahashi ,  Youichi Ito ,  Yoshifumi Ogawa ,  Hiroyuki Shichida ,  Tsunehiko Tsubone

IPC分类号： H05H100

CPC分类号： H01L21/6835 ,  H01L21/67109 ,  H01L21/6831 ,  H01L21/6833 ,  H01L2924/3025 ,  Y10T279/23

摘要： A method and system of holding a substrate where foreign substances on the back surface can be decreased. The substrate holding system comprises a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, a plurality of contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface of the substrate to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts to the cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact to each other in the large portion of the remaining area.

摘要翻译： 可以减少背面上的异物的保持基板的方法和系统。 基板保持系统包括：在与基板周边相对应的样品台上具有光滑表面的环形防漏表面，在基板周边内的多个接触保持部分，以及用于固定基板的静电吸引装置 通过使基板的背面与环状的防漏面和接触保持部接触。 基板在环状防漏面与冷却面接触，接触保持部位置于环状防漏面内。 衬底的背面和冷却表面在剩余区域的大部分中彼此不接触。

公开(公告)号：US06655044B2

公开(公告)日：2003-12-02

申请号：US09766975

申请日：2001-01-23

申请人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

发明人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC分类号： F26B504

CPC分类号： H01L21/67748 ,  B01J3/006 ,  B41J2/36 ,  B41J2/365 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253 ,  H01L21/67736 ,  Y10S134/902 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14

摘要： This invention relates to a vacuum processing apparatus having vacuum processing chambers the insides of which must be dry cleaned, and to a method of operating such an apparatus. When the vacuum processing chambers are dry-cleaned, dummy substrates are transferred into the vacuum processing chamber by substrates conveyor means from dummy substrate storage means which is disposed in the air atmosphere together with storage means for storing substrates to be processed, and the inside of the vacuum processing chamber is dry-cleaned by generating a plasma. The dummy substrate is returned to the dummy substrate storage means after dry cleaning is completed. Accordingly, any specific mechanism for only the cleaning purpose is not necessary and the construction of the apparatus can be made simple. Furthermore, the dummy substrates used for dry cleaning and the substrates to be processed do not coexist, contamination of the substrates to be processed due to dust and remaining gas can be prevented and the production yield can be high.

公开(公告)号：US06588121B2

公开(公告)日：2003-07-08

申请号：US09780444

申请日：2001-02-12

申请人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

发明人： Shigekazu Kato ,  Kouji Nishihata ,  Tsunehiko Tsubone ,  Atsushi Itou

IPC分类号： F26B1330

CPC分类号： H01L21/67748 ,  B01J3/006 ,  B41J2/36 ,  B41J2/365 ,  C23C14/564 ,  H01L21/67028 ,  H01L21/67167 ,  H01L21/67253 ,  H01L21/67736 ,  Y10S134/902 ,  Y10S414/137 ,  Y10S414/139 ,  Y10S414/14

摘要： A vacuum processing apparatus includes a means for transferring wafer cassettes from a transferring chamber to a lock chamber. The wafer cassettes are mounted within a cassette table and are arranged in a single line. The vacuum processing apparatus further includes lock chambers connected to a plurality of processing chambers with each substrate being carried into and out of the lock chambers.

摘要翻译： 真空处理装置包括用于将晶片盒从传送室传送到锁定室的装置。 晶片盒安装在盒式表格中，并排列成一行。 真空处理装置还包括连接到多个处理室的锁定室，每个基板被携带进出锁定室。