公开(公告)号：US07592655B2

公开(公告)日：2009-09-22

申请号：US11216111

申请日：2005-09-01

申请人： Narumi Ohkawa ,  Shigetoshi Takeda ,  Yukihiro Ishihara ,  Kazuki Hayashi ,  Nobuhisa Naori ,  Masahiro Chijiiwa

发明人： Narumi Ohkawa ,  Shigetoshi Takeda ,  Yukihiro Ishihara ,  Kazuki Hayashi ,  Nobuhisa Naori ,  Masahiro Chijiiwa

IPC分类号： H01L31/062

CPC分类号： H01L27/14603 ,  H01L21/76802 ,  H01L21/76897 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14687 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor image sensor includes: a semiconductor substrate having a number of pixels disposed in a matrix shape, the semiconductor substrate comprising a first region including a charge accumulation region of a photodiode and a floating diffusion and a second region including transistors, each having a gate electrode and source/drain regions; a first silicon oxide film formed above the semiconductor substrate, covering the surface of the charge accumulation region in the first region and formed as side wall spacers on side of the gate electrode walls of at lease some transistors in the second region; and a silicon nitride film formed above the first silicon oxide film, covering the source/drain regions in the second region and having an opening at least in an area above the charge accumulation region in the first region. The semiconductor image sensor is provided which has a high sensitivity and can supply an output with small noises.

摘要翻译： 半导体图像传感器包括：具有以矩阵形状排列的多个像素的半导体衬底，所述半导体衬底包括包括光电二极管的电荷聚集区域和浮动扩散部的第一区域和包括晶体管的第二区域，每个具有栅极 电极和源极/漏极区域; 形成在所述半导体衬底上方的第一氧化硅膜，覆盖所述第一区域中的所述电荷累积区域的表面，并且在所述第二区域中的至少一些晶体管的所述栅极电极壁的侧面上形成为侧壁间隔物; 以及形成在所述第一氧化硅膜上方的氮化硅膜，覆盖所述第二区域中的所述源极/漏极区域，并且至少在所述第一区域中的所述电荷累积区域之上的区域中具有开口。 提供具有高灵敏度的半导体图像传感器，并且可以提供具有小噪声的输出。

公开(公告)号：US20060208289A1

公开(公告)日：2006-09-21

申请号：US11216111

申请日：2005-09-01

申请人： Narumi Ohkawa ,  Shigetoshi Takeda ,  Yukihiro Ishihara ,  Kazuki Hayashi ,  Nobuhisa Naori ,  Masahiro Chijiiwa

发明人： Narumi Ohkawa ,  Shigetoshi Takeda ,  Yukihiro Ishihara ,  Kazuki Hayashi ,  Nobuhisa Naori ,  Masahiro Chijiiwa

IPC分类号： H01L31/113

CPC分类号： H01L27/14603 ,  H01L21/76802 ,  H01L21/76897 ,  H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14687 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor image sensor includes: a semiconductor substrate having a number of pixels disposed in a matrix shape, the semiconductor substrate comprising a first region including a charge accumulation region of a photodiode and a floating diffusion and a second region including transistors, each having a gate electrode and source/drain regions; a first silicon oxide film formed above the semiconductor substrate, covering the surface of the charge accumulation region in the first region and formed as side wall spacers on side of the gate electrode walls of at lease some transistors in the second region; and a silicon nitride film formed above the first silicon oxide film, covering the source/drain regions in the second region and having an opening at least in an area above the charge accumulation region in the first region. The semiconductor image sensor is provided which has a high sensitivity and can supply an output with small noises.

公开(公告)号：US07005690B2

公开(公告)日：2006-02-28

申请号：US11003380

申请日：2004-12-06

申请人： Masahiro Chijiiwa ,  Shigetoshi Takeda ,  Masaya Katayama

发明人： Masahiro Chijiiwa ,  Shigetoshi Takeda ,  Masaya Katayama

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/1463

摘要： The solid-state image sensor includes a pixel part 10, an analog circuit part 12, a digital circuit part 14 and an input/output circuit part 16. The digital circuit part 14 includes a first well 42c of a second conduction type formed in a second region of a semiconductor substrate 20 of a first conduction type surrounding a first region thereof; a first buried diffused layer 40c of the second conduction type buried in the first region: a second well 44b of the first conduction type formed near a surface of the semiconductor substrate 20 in the first region; and a first transistor 38e formed on the second well 44b.

摘要翻译： 固态图像传感器包括像素部分10，模拟电路部分12，数字电路部分14和输入/输出电路部分16。 数字电路部分14包括形成在围绕其第一区域的第一导电类型的半导体衬底20的第二区域中的第二导电类型的第一阱42c; 掩埋在第一区域中的第二导电类型的第一掩埋扩散层40c：在第一区域中形成在半导体衬底20的表面附近形成的第一导电类型的第二阱44b; 以及形成在第二阱44b上的第一晶体管38e。

公开(公告)号：US20060011956A1

公开(公告)日：2006-01-19

申请号：US11003380

申请日：2004-12-06

申请人： Masahiro Chijiiwa ,  Shigetoshi Takeda ,  Masaya Katayama

发明人： Masahiro Chijiiwa ,  Shigetoshi Takeda ,  Masaya Katayama

IPC分类号： H01L31/113

CPC分类号： H01L27/14609 ,  H01L27/1463

摘要： The solid-state image sensor includes a pixel part 10, an analog circuit part 12, a digital circuit part 14 and an input/output circuit part 16. The digital circuit part 14 includes a first well 42c of a second conduction type formed in a second region of a semiconductor substrate 20 of a first conduction type surrounding a first region thereof; a first buried diffused layer 40c of the second conduction type buried in the first region: a second well 44b of the first conduction type formed near a surface of the semiconductor substrate 20 in the first region; and a first transistor 38e formed on the second well 44b.

摘要翻译： 固态图像传感器包括像素部分10，模拟电路部分12，数字电路部分14和输入/输出电路部分16.数字电路部分14包括形成在第二导电类型的第二导体类型的第一阱42c 围绕其第一区域的第一导电类型的半导体衬底20的第二区域; 掩埋在第一区域中的第二导电类型的第一掩埋扩散层40c：在第一区域中形成在半导体衬底20的表面附近形成的第一导电类型的第二阱44b; 以及形成在第二阱44b上的第一晶体管38e。