公开(公告)号：US10026620B1

公开(公告)日：2018-07-17

申请号：US15630110

申请日：2017-06-22

Applicant: National Applied Research Laboratories

Inventor： Mao-Nan Chang ,  Tsung-Yu Chan ,  Chia-Yi Wu ,  Chun-Ting Lin ,  Ming-Hua Shiao

IPC: H01L21/3105

Abstract: The present invention relates to the growth of a native oxide layer on a surface of a silicon substrate. Deep ultraviolet (UV) light is irradiated to thereby effectively improve the quality of the native oxide layer. By improving the quality, the difficulty of the surface treatment of a cross-section sample for scanning capacitance microscopy (SCM) is improved. The life cycle and reliability of the sample are also improved with enhanced reproducibility for the measurement of SCM. Thus, the present invention provides an improved method and an apparatus using the same to prepare a cross-sectional sample for SCM. The feasibility and the concrete method for enhancing oxide layer quality on a silicon substrate surface by UV light irradiation under a humidity-controlled environment are established. The optimum parameters of irradiation time for n-type and p-type samples are made.