公开(公告)号：US09525085B2

公开(公告)日：2016-12-20

申请号：US14573312

申请日：2014-12-17

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Yueh-Hsuan Tsai ,  Chao-Nan Wei ,  Hui-Yun Bor ,  Chia-Shih Lin ,  Cuo-Yo Nieh ,  Jenn-Ming Wu

IPC: H01L31/00 ,  H01L31/032 ,  H01L31/0445 ,  H01L31/18 ,  C23C18/00

CPC classification number: H01L31/032 ,  C23C18/00 ,  C23C18/1204 ,  C23C18/1254 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02565 ,  H01L21/02628 ,  H01L31/0445 ,  H01L31/06 ,  H01L31/072 ,  H01L31/1884 ,  Y02E10/50

Abstract: A bismuth ferrite thin-film solar cell and a method of manufacturing the same control the quantity of Fe2+ defected in the bismuth ferrite thin-film by doping with zinc. Reduction of the quantity of Fe2+ defects in the bismuth ferrite thin-film is conducive to the increase of closed-circuit current density and enhancement of photoelectric conversion efficiency.

Abstract translation: 铋铁氧体薄膜太阳能电池及其制造方法通过掺杂锌来控制在铋铁氧体薄膜中缺陷的Fe 2+的量。 铋铁氧体薄膜中Fe2 +缺陷量的减少有利于闭路电流密度的增加和光电转换效率的提高。

公开(公告)号：US09574264B2

公开(公告)日：2017-02-21

申请号：US14716882

申请日：2015-05-20

Applicant: NATIONAL CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Shih-Chang Liang ,  Wei-Chieh Huang ,  Chao-Nan Wei ,  Cuo-Yo Ni ,  Hui-Yun Bor

IPC: C23C16/448 ,  C23C14/24

CPC classification number: C23C14/24 ,  C23C14/243

Abstract: In a method for evaporation depositing uniform thin films, a film is deposited on a substrate of a vacuum environment while maintaining a constant deposition rate. A cover is installed on a wall of the evaporation vessel. When the evaporation material is heated to an evaporation state and the interior of the evaporation vessel reaches a first vapor saturation pressure, the vapor of the evaporation material flows towards a pressure stabilizing chamber. When the pressure stabilizing chamber reaches a second vapor saturation pressure which is smaller than the first vapor saturation pressure, the vacuum environment has a vacuum background pressure which is smaller than the second vapor saturation pressure, so that the evaporation material vapor flows from the pressure stabilizing chamber towards the vacuum environment at constant rate due to the pressure difference, so as to evaporate the substrate.

Abstract translation: 在用于蒸发沉积均匀薄膜的方法中，将膜沉积在真空环境的基板上，同时保持恒定的沉积速率。 一个盖子安装在蒸发容器的墙壁上。 当蒸发材料被加热到蒸发状态并且蒸发容器的内部达到第一蒸气饱和压力时，蒸发材料的蒸气朝向压力稳定室流动。 当压力稳定室达到小于第一蒸汽饱和压力的第二蒸气饱和压力时，真空环境的真空背景压力小于第二蒸汽饱和压力，使得蒸发材料蒸汽从压力稳定 由于压力差，以恒定速率朝向真空环境室，以便使基板蒸发。

公开(公告)号：US10906099B2

公开(公告)日：2021-02-02

申请号：US16104151

申请日：2018-08-17

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Mau-Sheng Chiou ,  Chien-Hung Liao ,  Chao-Nan Wei ,  Hui-Yun Bor ,  Kuan-Zong Fung

IPC: B22F3/10 ,  B22F9/04 ,  B22F1/00 ,  C23C16/00 ,  C22C1/04

Abstract: A preparation method of high purity and densified tungsten-titanium metal which mixes titanium metal powder and tungsten metal powder together; adds metallic nitrates (such as nickel nitrate) as combustion improvers; then taking into the account of the characteristics of metal nitrate, which is soluble in alcohols to form a liquidous precursor, adds metal powder to mix together thoroughly, so that the sintering agent is expected to be colloid and uniformly spread among the tungsten-titanium metal powder. The preparation method significantly reduces the ratio of the combustion improver during the preparation of the high purity and densified tungsten-titanium target material.

公开(公告)号：US11313014B1

公开(公告)日：2022-04-26

申请号：US17191733

申请日：2021-03-04

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Tung-Chun Wu ,  Chao-Nan Wei ,  Hui-Yun Bor ,  Shea-Jue Wang

IPC: C22C19/05

Abstract: The present invention provides a nickel-based superalloy material, which comprises 0.06 wt % or less carbon, 11.61˜11.93 wt % chromium, 1.52˜2.85 wt % titanium, 5.89˜6.08 wt % aluminum, 0.009 wt % or less boron, 0.07 wt % or less zirconium, 2.16˜2.18 wt % niobium, 4.22˜4.29 wt % molybdenum, and the balance being composed of nickel and incidental impurities, whereby the effect of obtaining the nickel-based superalloy with better mechanical properties can be achieved.

公开(公告)号：US20210129272A1

公开(公告)日：2021-05-06

申请号：US16667920

申请日：2019-10-30

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chao-Yu Lin ,  Chao-Nan Wei ,  Chien-Hung Liao ,  Hui-Yun Po ,  Sheng-Long Lee ,  Yu-Chih Tseng ,  Vun-Shing Chengn

IPC: B23K35/30 ,  B23K35/02 ,  C22C19/05

Abstract: The present invention provides a solder for nickel based superalloy soldering. The solder includes 11 wt % to 13 wt % chromium, 5.0 wt % to 7.0 wt % aluminum, 3.5 wt % to 5.0 wt % molybdenum, 1.5 wt % to 2.5 wt % niobium, 0.4 wt % to 1.0 wt % titanium, 0.03 wt % to 0.07 wt % carbon, 0.05 wt %-0.15 wt % zirconium, 0.001 wt % to 0.1 wt % boron and remainder nickel or other inevitable impurities, thereby reducing occurrence of soldering hot cracking and insufficient weld bead strength in nickel based superalloy raw materials during soldering.

公开(公告)号：US10550452B2

公开(公告)日：2020-02-04

申请号：US15633989

申请日：2017-06-27

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Chien-Hung Liao ,  Hui-Yun Bor ,  Cuo-Yo Nieh ,  Chao-Nan Wei ,  Sz-Hen Chen ,  Po-Han Chu

IPC: C22C19/05 ,  C22C1/02 ,  C22F1/10 ,  C22F1/02 ,  C22F1/00 ,  B22D18/06

Abstract: A high creep-resistant equiaxed grain nickel-based superalloy. The high creep-resistant equiaxed grain nickel-based superalloy is characterized that the chemical compositions in weight ratios include Cr in 8.0 to 9.5 wt %, W in 9.5 to 10.5 wt %, Co in 9.5 to 10.5 wt %, Al in 5.0 to 6.0 wt %, Ti in 0.5 to 1.5 wt %, Mo in 0.5 to 1.0 wt %, Ta in 2.5 to 4.0 wt %, Hf in 1.0 to 2.0 wt %, Ir in 2.0 to 4.0 wt %, C in 0.1 to 0.2 wt %, B in 0.01 to 0.1 wt %, Zr in 0.01 to 0.10 wt %, and the remaining part formed by Ni and inevitable impurities.

公开(公告)号：US09783881B2

公开(公告)日：2017-10-10

申请号：US14715618

申请日：2015-05-19

Applicant: NATIONAL CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Shih-Chang Liang ,  Wei-Chieh Huang ,  Chao-Nan Wei ,  Cuo-Yo Ni ,  Hui-Yun Bor

IPC: C23C16/00 ,  C23C14/24 ,  C23C14/06

CPC classification number: C23C14/243 ,  C23C14/0623

Abstract: A linear evaporation apparatus includes a thermal insulation chamber, and crucibles, evaporation material heaters and a mixing chamber installed in the thermal insulation chamber. The mixing chamber includes a flow limiting and adjusting layer, a flow channel adjusting member, a mixed layer and a linear evaporation layer. The flow limiting and adjusting layer is a rectangular sheet with flow limit holes corresponsive to the crucibles respectively; the flow channel adjusting member is an interconnected structure having at least one flow inlet corresponsive to some of the flow limit holes and at least one flow outlet, and the mixed layer is a substantially I-shaped sheet structure, and the linear evaporation layer is a rectangular sheet having a linear source evaporation opening tapered from both ends to the middle, so as to improve the uniformity of the thin film and the utilization of the evaporation materials.