公开(公告)号：US10246334B2

公开(公告)日：2019-04-02

申请号：US15434088

申请日：2017-02-16

Applicant: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Dai-Liang Ma ,  Cheng-Jung Ko ,  Bang-Ying Yu ,  Tsao-Chun Peng

IPC: C01B32/21 ,  C01B32/205

Abstract: A method of producing a heterophase graphite, including the steps of (A) providing a silicon carbide single-crystal substrate; (B) placing the silicon carbide single-crystal substrate in a graphite crucible and then in a reactor to undergo an air extraction process; and (C) performing a desilicification reaction on the silicon carbide single-crystal substrate in an inert gas atmosphere to obtain 2H graphite and 3R graphite, so as to directly produce lumpy (sheetlike, crushed, particulate, and powderlike) 2H graphite and 3R graphite, and preclude secondary contamination of raw materials which might otherwise occur because of a crushing step, an oxidation step, and an acid rinsing step.

公开(公告)号：US20170137962A1

公开(公告)日：2017-05-18

申请号：US14941755

申请日：2015-11-16

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Dai-Liang Ma ,  Bang-Ying Yu ,  Hsueh-I Chen ,  Tsao-Chun Peng ,  Bo-Chen Lin ,  Zhi-Wei Guo

IPC: C30B23/00 ,  H01L21/02 ,  C30B29/40 ,  C30B23/06 ,  C30B29/36

CPC classification number: C30B23/002 ,  C30B23/025 ,  C30B23/06 ,  C30B29/36 ,  C30B29/403

Abstract: A fabricating method for growing a single crystal of a multi-type compound comprises steps of: (a) providing a seed crystal at a deposition region; (b) providing a powder material at a high purity source region; and (c) undertaking a vacuum process, a heating process, a growing process, a cooling process to prepare the singe crystal, wherein a heating source is used to move to control a temperature gradient within a gas temperature control region to form a temperature gradient motion so that the temperature gradient presents a variation. By reducing the possibility of other deficiencies being continuously induced in the following crystal growth process owing to the local slime occurring at the rear side of the seed crystal from the void deficiencies at the rear side of the original seed crystal may be excluded, but also the possibility of other multi-type bodies being induced by the above vacancies.