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公开(公告)号：US20170137962A1
公开(公告)日：2017-05-18
申请号：US14941755
申请日：2015-11-16
Inventor： Dai-Liang Ma , Bang-Ying Yu , Hsueh-I Chen , Tsao-Chun Peng , Bo-Chen Lin , Zhi-Wei Guo
CPC classification number: C30B23/002 , C30B23/025 , C30B23/06 , C30B29/36 , C30B29/403
Abstract: A fabricating method for growing a single crystal of a multi-type compound comprises steps of: (a) providing a seed crystal at a deposition region; (b) providing a powder material at a high purity source region; and (c) undertaking a vacuum process, a heating process, a growing process, a cooling process to prepare the singe crystal, wherein a heating source is used to move to control a temperature gradient within a gas temperature control region to form a temperature gradient motion so that the temperature gradient presents a variation. By reducing the possibility of other deficiencies being continuously induced in the following crystal growth process owing to the local slime occurring at the rear side of the seed crystal from the void deficiencies at the rear side of the original seed crystal may be excluded, but also the possibility of other multi-type bodies being induced by the above vacancies.
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公开(公告)号：US11130152B2
公开(公告)日：2021-09-28
申请号：US16699093
申请日：2019-11-28
Inventor： Cheng-Jung Ko , Jun-Bin Huang , Chih-Wei Kuo , Dai-Liang Ma , Bang-Ying Yu
Abstract: A method for the formation of tantalum carbides on a graphite substrate includes the steps of: (a) adding an organic tantalum compound, a chelating agent, a pre-polymer to an organic solvent to form a tantalum polymeric solution; (b) subjecting a graphite substrate with the tantalum polymeric solution to a curing process to form a polymeric tantalum film on the graphite substrate; and (c) subjecting the polymeric tantalum film on the graphite substrate in an oven to a pyrolytic reaction in the presence of a protective gas to obtain a protective tantalum carbide on the graphite substrate.
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公开(公告)号：US11049717B2
公开(公告)日：2021-06-29
申请号：US16231262
申请日：2018-12-21
Inventor： Dai-Liang Ma , Cheng-Jung Ko , Chia-Hung Tai , Jun-Bin Huang , Bang-Ying Yu
Abstract: A method for fabricating an ultra-thin graphite film on a silicon carbide substrate includes the steps of: (A) providing a polyamic acid solution and a siloxane-containing coupling agent for polymerizing under an inert gas atmosphere to form a siloxane-coupling-group-containing polyamic acid solution; (B) performing a curing process after applying the siloxane-coupling-group-containing polyamic acid solution to a silicon carbide substrate; (C) placing the silicon carbide substrate in a graphite crucible before placing the graphite crucible in a reaction furnace to perform a carbonization process under an inert gas atmosphere; (D) subjecting the silicon carbide substrate to a graphitization process to obtain a graphite film, thereby make it possible to fabricate an ultra-thin graphite film of high-quality on the surface of silicon carbide in a lower graphitization temperature range.
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Patent Agency Ranking
公开(公告)号：US20210189590A1
公开(公告)日：2021-06-24
申请号：US16721935
申请日：2019-12-20
Inventor： Chih-Wei Kuo , Dai-Liang Ma , Chia-Hung Tai , Bang-Ying Yu , Cheng-Jung Ko , Bo-Cheng Lin , Hsueh-I Chen
Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.
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公开(公告)号：US11072871B2
公开(公告)日：2021-07-27
申请号：US16721935
申请日：2019-12-20
Inventor： Chih-Wei Kuo , Dai-Liang Ma , Chia-Hung Tai , Bang-Ying Yu , Cheng-Jung Ko , Bo-Cheng Lin , Hsueh-I Chen
Abstract: A preparation apparatus for uniform silicon carbide crystals comprises a circular cylinder, a doping tablet, and a plate to stabilize and control the supply of dopants. The accessory does not participate in the reaction in the growth chamber but maintains its efficacy during growth. Finally, a single semi-insulating silicon carbide crystal with uniform electrical characteristics can be obtained.
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公开(公告)号：US20210162453A1
公开(公告)日：2021-06-03
申请号：US16699093
申请日：2019-11-28
Inventor： Cheng-Jung Ko , Jun-Bin Huang , Chih-Wei Kuo , Dai-Liang Ma , Bang-Ying Yu
Abstract: A method for the formation of tantalum carbides on a graphite substrate includes the steps of: (a) adding an organic tantalum compound, a chelating agent, a pre-polymer to an organic solvent to form a tantalum polymeric solution; (b) subjecting a graphite substrate with the tantalum polymeric solution to a curing process to form a polymeric tantalum film on the graphite substrate; and (c) subjecting the polymeric tantalum film on the graphite substrate in an oven to a pyrolytic reaction in the presence of a protective gas to obtain a protective tantalum carbide on the graphite substrate.
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公开(公告)号：US10246334B2
公开(公告)日：2019-04-02
申请号：US15434088
申请日：2017-02-16
Inventor： Dai-Liang Ma , Cheng-Jung Ko , Bang-Ying Yu , Tsao-Chun Peng
IPC: C01B32/21 , C01B32/205
Abstract: A method of producing a heterophase graphite, including the steps of (A) providing a silicon carbide single-crystal substrate; (B) placing the silicon carbide single-crystal substrate in a graphite crucible and then in a reactor to undergo an air extraction process; and (C) performing a desilicification reaction on the silicon carbide single-crystal substrate in an inert gas atmosphere to obtain 2H graphite and 3R graphite, so as to directly produce lumpy (sheetlike, crushed, particulate, and powderlike) 2H graphite and 3R graphite, and preclude secondary contamination of raw materials which might otherwise occur because of a crushing step, an oxidation step, and an acid rinsing step.
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公开(公告)号：US09689087B1
公开(公告)日：2017-06-27
申请号：US14961963
申请日：2015-12-08
Inventor： Ta-Ching Li , Dai-Liang Ma , Bang-Ying Yu , Bo-Cheng Lin
CPC classification number: C30B23/025 , C30B29/36
Abstract: A method of making a photonic crystal includes step 1 providing a seed, followed by etching a surface of the seed to form thereon submicron voids; step 2 providing a graphite disk, followed by coating a side of the graphite disk with a graphite adhesive whereby the void-formed surface of the seed is attached to the graphite disk to form a seed holder; step 3 placing the seed holder above a growth chamber, followed by placing a raw material below the growth chamber; step 4 forming a thermal field in the growth chamber with a heating device to sublime the raw material; and step 5 controlling temperature, thermal field, atmosphere and pressure in the growth chamber to allow the gaseous raw material to be conveyed and deposited on the seed, thereby forming a photonic crystal.
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