公开(公告)号：US20030042851A1

公开(公告)日：2003-03-06

申请号：US10234160

申请日：2002-09-05

Applicant: National Inst. of Advanced Ind. Science and Tech.

Inventor： Kakuya Iwata ,  Shigeru Niki ,  Paul Fons ,  Akimasa Yamada ,  Koji Matsubara

IPC: H01J001/62 ,  H01J063/04

CPC classification number: H01S5/327 ,  H01L33/28 ,  H01S5/021

Abstract: A light-emitting device includes a silicon substrate, a ZnOSSe layer provided on the silicon substrate that is lattice-matched to the silicon substrate, and a separate confinement heterostructure light-emitting layer that is provided on the ZnOSSe layer and includes an active layer and upper and lower clad layers.

Abstract translation: 发光器件包括硅衬底，设置在与硅衬底晶格匹配的硅衬底上的ZnOSSe层和设置在ZnOSSe层上并包括有源层的单独限制性异质结构发光层，以及 上下包层。