公开(公告)号：US20180305219A1

公开(公告)日：2018-10-25

申请号：US15769612

申请日：2016-10-12

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Naoto Kikuchi ,  Kazuhiko Tonooka ,  Yoshihiro Aiura ,  Hirofumi Kawanaka ,  Ruiping Wang ,  Hiroshi Takashima ,  Akane Samizo ,  Shintarou Ikeda

IPC: C01G33/00 ,  H01L29/24

CPC classification number: C01G33/006 ,  C01G33/00 ,  C01P2002/36 ,  C01P2002/72 ,  C01P2006/40 ,  C04B35/457 ,  C04B35/495 ,  H01L29/24 ,  H01L29/786

Abstract: There is provided an oxide semiconductor that is capable of achieving p-type semiconductor properties in the oxide semiconductor and has excellent transparency, mobility and weather resistance. The oxide semiconductor is achieved by an oxide composite having a pyrochlore structure that contains Sn and Nb whose composition ratio Sn/Nb is 0.81≤Sn/Nb