公开(公告)号：US10189203B2

公开(公告)日：2019-01-29

申请号：US15029481

申请日：2014-08-29

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Sung Won Youn ,  Sang Cheon Park ,  Hiroshi Hiroshima ,  Hideki Takagi ,  Kenta Suzuki

IPC: B29C59/02 ,  G03F7/00 ,  B29C35/08 ,  B29C43/02 ,  B29C43/52 ,  G03F7/038 ,  C08L79/08 ,  B29K79/00

Abstract: Provided is a method for forming a pattern of polyimide that is simpler and is more excellent in the pattern shape and in the dimensional accuracy in comparison with the conventional techniques of patterning polyimide, such as photolithography and laser processing. In a method for forming a micropattern of polyimide, which includes using as polyimide a solvent-soluble polyimide resin composition that is photosensitive and is moldable at a temperature of less than or equal to a glass-transition temperature; patterning the composition using thermal imprinting; and thermally curing the composition, ultraviolet irradiation is performed after the composition is released from a mold after a molding step.

公开(公告)号：US09929311B2

公开(公告)日：2018-03-27

申请号：US14777176

申请日：2014-07-16

Applicant: MARUBUN CORPORATION ,  TOSHIBA KIKAI KABUSHIKI KAISHA ,  RIKEN ,  NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY ,  ULVAC, INC. ,  TOKYO OHKA KOGYO CO., LTD.

Inventor： Yukio Kashima ,  Eriko Matsuura ,  Mitsunori Kokubo ,  Takaharu Tashiro ,  Takafumi Ookawa ,  Hideki Hirayama ,  Sung Won Youn ,  Hideki Takagi ,  Ryuichiro Kamimura ,  Yamato Osada ,  Satoshi Shimatani

IPC: H01L33/22 ,  G06F17/50 ,  G06F17/10 ,  H01L33/44 ,  H01L33/50 ,  H01L33/24

CPC classification number: H01L33/22 ,  G06F17/10 ,  G06F17/5009 ,  H01L33/24 ,  H01L33/44 ,  H01L33/502 ,  H01L2933/0083

Abstract: A semiconductor light emitting element with a design wavelength of λ, comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength λ satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength λ becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.