公开(公告)号：US10152152B2

公开(公告)日：2018-12-11

申请号：US15516119

申请日：2015-09-29

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Takehito Kozasa ,  Manabu Yoshida

IPC: G08B6/00 ,  G06F3/041 ,  H01G7/02 ,  H03K17/955 ,  H03K17/975 ,  G01P15/08 ,  G06F3/01 ,  G06F3/0354 ,  H01L21/31 ,  H01L29/51 ,  H01L29/78 ,  H01L29/82 ,  H01L29/84 ,  H01L41/113 ,  B81B3/00 ,  G06F3/044 ,  G01L1/22

Abstract: Provided are an element applicable to a high-precision, high-sensitivity pressure detecting sensor and switch, a manufacturing method for the element; and a sensor, an electronic circuit, and an input device that include the element. The electret element of the present invention has a semiconductor sandwiched between a pair of electrodes, and an electret film disposed at a location opposite to the semiconductor via a gap. The electret element of the present invention may be structured so that the semiconductor contacts with the electret film, or so as to have micro-sized gaps therebetween. The electret film is semi-permanently kept in a positively or negatively charged state. By having a structure in which the electret film can contact with or approach the semiconductor, an amount of electric currents flowing between the pair of electrodes can be controlled.