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1.发明授权公开(公告)号：US09691839B2
公开(公告)日：2017-06-27
申请号：US13996494
申请日：2011-12-14
申请人： Nick Lindert , Timothy E. Glassman , Andre Baran
发明人： Nick Lindert , Timothy E. Glassman , Andre Baran
IPC分类号： H01L27/108 , H01L49/02
CPC分类号： H01L28/40 , H01L27/108 , H01L27/10808 , H01L27/10852 , H01L28/75 , H01L28/90
摘要： Metal-insulator-metal (MIM) capacitors with insulator stacks having a plurality of metal oxide layers are described. For example, a MIM capacitor for a semiconductor device includes a trench disposed in a dielectric layer disposed above a substrate. A first metal plate is disposed along the bottom and sidewalls of the trench. An insulator stack is disposed above and conformal with the first metal plate. The insulator stack includes a first metal oxide layer having a first dielectric constant and a second metal oxide layer having a second dielectric constant. The first dielectric constant is higher than the second dielectric constant. The MIM capacitor also includes a second metal plate disposed above and conformal with the insulator stack.
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2.发明申请公开(公告)号：US20140001598A1
公开(公告)日：2014-01-02
申请号：US13977550
申请日：2011-12-21
IPC分类号： H01L49/02
CPC分类号： H01L28/60 , C23C16/0281 , C23C16/045 , C23C16/32 , C23C16/45525
摘要： Atomic layer deposition (ALD) of TaAlC for capacitor integration is generally described. For example, a semiconductor structure includes a plurality of semiconductor devices disposed in or above a substrate. One or more dielectric layers are disposed above the plurality of semiconductor devices. A metal-insulator-metal (MIM) capacitor is disposed in at least one of the dielectric layers, the MIM capacitor includes an electrode having a conformal layer of TaAlC and the MIM capacitor is electrically coupled to one or more of the semiconductor devices. Other embodiments are also disclosed and claimed.
摘要翻译： 通常描述用于电容器集成的TaAlC的原子层沉积（ALD）。 例如，半导体结构包括设置在基板中或上方的多个半导体器件。 一个或多个电介质层设置在多个半导体器件的上方。 金属绝缘体金属（MIM）电容器设置在至少一个电介质层中，MIM电容器包括具有保形层TaAlC的电极，并且MIM电容器电耦合到一个或多个半导体器件。 还公开并要求保护其他实施例。
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3.发明申请METAL-INSULATOR-METAL (MIM) CAPACITOR WITH INSULATOR STACK HAVING A PLURALITY OF METAL OXIDE LAYERS 有权金属绝缘体金属（MIM）电容器，具有绝缘体堆叠，具有大量的金属氧化物层公开(公告)号：US20130270676A1
公开(公告)日：2013-10-17
申请号：US13996494
申请日：2011-12-14
申请人： Nick Lindert , Timothy E. Glassman , Andre Baran
发明人： Nick Lindert , Timothy E. Glassman , Andre Baran
IPC分类号： H01L49/02 , H01L27/108
CPC分类号： H01L28/40 , H01L27/108 , H01L27/10808 , H01L27/10852 , H01L28/75 , H01L28/90
摘要： Metal-insulator-metal (MIM) capacitors with insulator stacks having a plurality of metal oxide layers are described. For example, a MIM capacitor for a semiconductor device includes a trench disposed in a dielectric layer disposed above a substrate. A first metal plate is disposed along the bottom and sidewalls of the trench. An insulator stack is disposed above and conformal with the first metal plate. The insulator stack includes a first metal oxide layer having a first dielectric constant and a second metal oxide layer having a second dielectric constant. The first dielectric constant is higher than the second dielectric constant. The MIM capacitor also includes a second metal plate disposed above and conformal with the insulator stack.
摘要翻译： 描述了具有多个金属氧化物层的具有绝缘体堆叠的金属 - 绝缘体金属（MIM）电容器。 例如，用于半导体器件的MIM电容器包括设置在设置在基板上方的电介质层中的沟槽。 第一金属板沿着沟槽的底部和侧壁设置。 绝缘体堆叠设置在第一金属板的上方并与第一金属板保持一致。 绝缘体堆叠包括具有第一介电常数的第一金属氧化物层和具有第二介电常数的第二金属氧化物层。 第一介电常数高于第二介电常数。 MIM电容器还包括设置在绝缘体叠层上方并与绝缘体堆叠保持的第二金属板。
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公开(公告)号：USD628079S1
公开(公告)日：2010-11-30
申请号：US29354551
申请日：2010-01-26
申请人： Andre Baran
设计人： Andre Baran
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