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    System and method for controlling nanostructure growth
    2.
    发明申请
    System and method for controlling nanostructure growth 审中-公开
    用于控制纳米结构生长的系统和方法

    公开(公告)号：US20060060863A1

    公开(公告)日：2006-03-23

    申请号：US10946753

    申请日：2004-09-22

    申请人： Jennifer Lu ,  Nicolas Moll ,  Thomas Kopley

    发明人： Jennifer Lu ,  Nicolas Moll ,  Thomas Kopley

    IPC分类号： H01L29/15 ,  H01L31/0312

    CPC分类号： C23C16/04 ,  B82Y10/00 ,  H01L51/0048

    摘要： Systems and methods are provided for controllably growing nanostructures, such as nanotubes, on a substrate, thus enabling the length and/or orientation of the nanostructures to be selectively controlled. A substrate's surface is selectively patterned to include topological structures, such as a blocking structure protruding from the surface and/or a recess in the surface, for influencing the nanostructure growth along the surface from a catalyst. The topological structures can be located to control the length and/or orientation of the nanostructures differently on different areas of the substrate. The topological structures may be of a substance that chemically inhibits growth of the nanostructure.

    摘要翻译： 提供了系统和方法用于在衬底上可控地生长纳米结构，例如纳米管，从而使纳米结构的长度和/或取向被选择性地控制。 衬底的表面被选择性地图案化以包括拓扑结构，例如从表面突出的阻挡结构和/或表面中的凹部，用于影响来自催化剂的表面的纳米结构生长。 可以定位拓扑结构以在衬底的不同区域上不同地控制纳米结构的长度和/或取向。 拓扑结构可以是化学抑制纳米结构生长的物质。

    System and method for growing nanostructures from a periphery of a catalyst layer
    3.
    发明申请
    System and method for growing nanostructures from a periphery of a catalyst layer 审中-公开
    从催化剂层的周边生长纳米结构的系统和方法

    公开(公告)号：US20060084570A1

    公开(公告)日：2006-04-20

    申请号：US11035595

    申请日：2005-01-14

    申请人： Thomas Kopley ,  Jennifer Lu ,  Nicolas Moll ,  Sungsoo Yi

    发明人： Thomas Kopley ,  Jennifer Lu ,  Nicolas Moll ,  Sungsoo Yi

    IPC分类号： B01J21/04

    CPC分类号： B82Y40/00 ,  B01J23/74 ,  B01J35/0013 ,  C01B32/162

    摘要： Systems and methods are provided for limiting the growth of nanostructures, such as nanotubes, from a catalyst layer. More particularly, systems and methods are provided for growing nanostructures from the periphery of a catalyst layer. In certain embodiments, a catalyst layer from which nanostructures can be grown during a growth process, such as CVD or PECVD, is located on a substrate. The catalyst layer is covered with a covering layer such that the catalyst layer is sandwiched between the substrate and the covering layer. The resulting structure then undergoes a nanostructure growth process. Because the catalyst layer is sandwiched between the substrate and the covering layer, growth of nanostructures is limited to growth from nanoparticles located on the periphery of the catalyst layer. Thus, growth of nanostructures does not result from nanoparticles located in an interior region of the catalyst layer.

    摘要翻译： 提供了系统和方法，用于从催化剂层限制纳米结构如纳米管的生长。 更具体地，提供了用于从催化剂层的周边生长纳米结构的系统和方法。 在某些实施方案中，在生长过程（例如CVD或PECVD）中可以从其中生长纳米结构的催化剂层位于基底上。 催化剂层被覆盖层覆盖，使得催化剂层夹在基板和覆盖层之间。 所得结构然后经历纳米结构生长过程。 由于催化剂层夹在基材和覆盖层之间，纳米结构的生长被限制在从位于催化剂层周边的纳米颗粒生长。 因此，纳米结构的生长不是由位于催化剂层的内部区域中的纳米颗粒产生的。

    Field effect transistor having a carrier exclusion layer
    5.
    发明申请
    Field effect transistor having a carrier exclusion layer 审中-公开
    场效应晶体管具有载流子排除层

    公开(公告)号：US20060102931A1

    公开(公告)日：2006-05-18

    申请号：US10991014

    申请日：2004-11-17

    申请人： Thomas Edward Kopley ,  Mark Robert Hueschen ,  Nicolas Moll

    发明人： Thomas Edward Kopley ,  Mark Robert Hueschen ,  Nicolas Moll

    IPC分类号： H01L31/072 ,  H01L21/3205

    CPC分类号： H01L29/802

    摘要： A field-effect transistor comprises a substrate, a channel layer over the substrate, a gate insulator, a gate separated from the channel layer by the gate insulator, and a carrier exclusion layer between the channel layer and the gate insulator, wherein the conduction band energy of the carrier exclusion layer is larger than the conduction band energy of the channel layer.

    摘要翻译： 场效应晶体管包括衬底，衬底上的沟道层，栅极绝缘体，通过栅极绝缘体与沟道层分离的栅极以及沟道层和栅极绝缘体之间的载流子排除层，其中导带 载流子排除层的能量大于沟道层的导带能量。