公开(公告)号：US20060084570A1

公开(公告)日：2006-04-20

申请号：US11035595

申请日：2005-01-14

申请人： Thomas Kopley ,  Jennifer Lu ,  Nicolas Moll ,  Sungsoo Yi

发明人： Thomas Kopley ,  Jennifer Lu ,  Nicolas Moll ,  Sungsoo Yi

IPC分类号： B01J21/04

CPC分类号： B82Y40/00 ,  B01J23/74 ,  B01J35/0013 ,  C01B32/162

摘要： Systems and methods are provided for limiting the growth of nanostructures, such as nanotubes, from a catalyst layer. More particularly, systems and methods are provided for growing nanostructures from the periphery of a catalyst layer. In certain embodiments, a catalyst layer from which nanostructures can be grown during a growth process, such as CVD or PECVD, is located on a substrate. The catalyst layer is covered with a covering layer such that the catalyst layer is sandwiched between the substrate and the covering layer. The resulting structure then undergoes a nanostructure growth process. Because the catalyst layer is sandwiched between the substrate and the covering layer, growth of nanostructures is limited to growth from nanoparticles located on the periphery of the catalyst layer. Thus, growth of nanostructures does not result from nanoparticles located in an interior region of the catalyst layer.

摘要翻译： 提供了系统和方法，用于从催化剂层限制纳米结构如纳米管的生长。 更具体地，提供了用于从催化剂层的周边生长纳米结构的系统和方法。 在某些实施方案中，在生长过程（例如CVD或PECVD）中可以从其中生长纳米结构的催化剂层位于基底上。 催化剂层被覆盖层覆盖，使得催化剂层夹在基板和覆盖层之间。 所得结构然后经历纳米结构生长过程。 由于催化剂层夹在基材和覆盖层之间，纳米结构的生长被限制在从位于催化剂层周边的纳米颗粒生长。 因此，纳米结构的生长不是由位于催化剂层的内部区域中的纳米颗粒产生的。

公开(公告)号：US20120025169A1

公开(公告)日：2012-02-02

申请号：US12848722

申请日：2010-08-02

申请人： Danny E. Mars ,  James C. Kim ,  Sungsoo Yi

发明人： Danny E. Mars ,  James C. Kim ,  Sungsoo Yi

IPC分类号： H01L29/775 ,  H01L21/336 ,  H01L29/737

CPC分类号： H01L29/732 ,  B82Y10/00 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/2003 ,  H01L29/6631 ,  H01L29/66318 ,  H01L29/66462 ,  H01L29/66469 ,  H01L29/66856 ,  H01L29/7371 ,  H01L29/775 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/8122

摘要： Transistors and methods for forming transistors from groups of nanostructures are disclosed herein. The transistor may be formed from an array of nanostructures that are grown vertically on a substrate. The nanostructures may have lower, middle and upper segments that may be formed with different materials and/or doping to achieve desired effects. Collectively, the lower segments may form the source or drain, with the middle segments collectively forming the channel. Alternatively, the lower segments could collectively form the emitter or collector, with the middle segments collectively forming the base. Transistor electrodes may be planar metal structures that surround sidewalls of the nanostructures. The transistors may be Field Effect Transistors (FETs) or bipolar junction transistors (BJTs). Heterojunction bipolar junction transistors (HBTs) and high electron mobility transistors (HEMTs) are possible.

摘要翻译： 本文公开了用于从纳米结构体组形成晶体管的晶体管和方法。 晶体管可以由在衬底上垂直生长的纳米结构阵列形成。 纳米结构可以具有可以用不同材料和/或掺杂形成以获得期望效果的下部，中部和上部部分。 总的来说，下段可形成源或漏，中间段共同形成通道。 或者，下段可以共同形成发射器或集电器，中间段共同形成基座。 晶体管电极可以是围绕纳米结构侧壁的平面金属结构。 晶体管可以是场效应晶体管（FET）或双极结型晶体管（BJT）。 异质结双极结晶体管（HBT）和高电子迁移率晶体管（HEMT）是可能的。

公开(公告)号：US20110297913A1

公开(公告)日：2011-12-08

申请号：US12796569

申请日：2010-06-08

申请人： James C. Kim ,  Sungsoo Yi ,  Danny E. Mars

发明人： James C. Kim ,  Sungsoo Yi ,  Danny E. Mars

IPC分类号： H01L31/0352 ,  H01L31/18 ,  H01L33/04 ,  H01L21/30

CPC分类号： H01L33/18 ,  B82Y10/00 ,  H01L25/0756 ,  H01L33/08 ,  H01L33/24 ,  H01L33/38 ,  H01L2224/48091 ,  H01L2933/0016 ,  H01L2924/00014

摘要： Nanostructure array optoelectronic devices are disclosed. The optoelectronic device may have a top electrical contact that is physically and electrically connected to sidewalls of the array of nanostructures (e.g., nanocolumns). The top electrical contact may be located such that light can enter or leave the nanostructures without passing through the top electrical contact. Therefore, the top electrical contact can be opaque to light having wavelengths that are absorbed or generated by active regions in the nanostructures. The top electrical contact can be made from a material that is highly conductive, as no tradeoff needs to be made between optical transparency and electrical conductivity. The device could be a solar cell, LED, photo-detector, etc.

摘要翻译： 公开了纳米结构阵列光电器件。 光电子器件可以具有物理和电连接到纳米结构阵列（例如，纳米柱）的侧壁的顶部电接触。 顶部电接触可以被定位成使得光可以进入或离开纳米结构而不通过顶部电接触。 因此，顶部电接触可以对具有由纳米结构中的活性区域吸收或产生的波长的光是不透明的。 顶部电接触可以由高导电性的材料制成，因为不需要在光学透明度和电导率之间进行折衷。 该装置可以是太阳能电池，LED，光电检测器等

公开(公告)号：US20100236617A1

公开(公告)日：2010-09-23

申请号：US12408533

申请日：2009-03-20

申请人： Sungsoo Yi

发明人： Sungsoo Yi

IPC分类号： H01L31/00 ,  H01L21/00

CPC分类号： H01L31/035281 ,  H01L31/022441 ,  H01L31/03529 ,  H01L31/075 ,  H01L31/076 ,  Y02E10/548

摘要： A solar cell having back side conductive contacts and method for forming the solar cell is provided. One embodiment is a solar cell having back side conductive contacts. The solar cell has a first region of a first material having a first conductivity over a front side of a substrate, a second region of a second material conformably on the first material, and a third region of a third material having a second conductivity conformably on the second material. The first region, the second region, and the third region form a structure that generates charge carriers from solar radiation. The solar cell has a first conductive contact and a second conductive contact exposed on the back side of the substrate. The first conductive contact is in electrical contact with the first material and the second conductive contact is in electrical contact with the third material.

摘要翻译： 提供具有背面导电触点的太阳能电池和用于形成太阳能电池的方法。 一个实施例是具有背面导电触点的太阳能电池。 太阳能电池具有第一材料的第一区域，其具有在基板的正面上的第一导电性，第二材料的第二区域顺应地在第一材料上，第三材料的第三区域具有第二导电性， 第二种材料。 第一区域，第二区域和第三区域形成从太阳辐射产生电荷载流子的结构。 太阳能电池具有暴露在基板的背面上的第一导电接触和第二导电接触。 第一导电接触件与第一材料电接触，第二导电接触件与第三材料电接触。

公开(公告)号：US20080149942A1

公开(公告)日：2008-06-26

申请号：US11615479

申请日：2006-12-22

申请人： Sungsoo Yi ,  Aurelien J. F. David ,  Nathan F. Gardner ,  Michael R. Krames ,  Linda T. Romano

发明人： Sungsoo Yi ,  Aurelien J. F. David ,  Nathan F. Gardner ,  Michael R. Krames ,  Linda T. Romano

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L33/12 ,  H01L33/22

摘要： In accordance with embodiments of the invention, strain is reduced in the light emitting layer of a III-nitride device by including a strain-relieved layer in the device. The surface on which the strain-relieved layer is grown is configured such that strain-relieved layer can expand laterally and at least partially relax. In some embodiments of the invention, the strain-relieved layer is grown over a textured semiconductor layer or a mask layer. In some embodiments of the invention, the strain-relieved layer is group of posts of semiconductor material.

摘要翻译： 根据本发明的实施例，通过在器件中包括应变消除层，在III族氮化物器件的发光层中应变被减小。 应变消除层生长在其上的表面被配置成使得应变消除层可以横向膨胀并且至少部分地松弛。 在本发明的一些实施方案中，应变释放层在织构化的半导体层或掩模层上生长。 在本发明的一些实施例中，应变消除层是半导体材料的一组柱。

公开(公告)号：US20080156366A1

公开(公告)日：2008-07-03

申请号：US11648059

申请日：2006-12-29

申请人： James C. Kim ,  Sungsoo Yi

发明人： James C. Kim ,  Sungsoo Yi

IPC分类号： H01L31/0304 ,  H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/0352 ,  B82Y20/00 ,  H01L31/03046 ,  H01L31/035236 ,  H01L31/0384 ,  H01L31/043 ,  H01L31/0725 ,  H01L31/0735 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

摘要： A method and apparatus for solar cell having graded energy wells is provided. The active region of the solar cell comprises nanostructures. The nanostructures are formed from a material that comprises a III-V compound semiconductor and an element that alters the band gap of the III-V compound semiconductor. For example, the III-V compound semiconductor could be gallium nitride (GaN). As an example, the “band gap altering element” could be indium (In). The concentration of the indium in the active region is non-uniform such that the active region has a number of energy wells, separated by barriers. The energy wells may be “graded”, by which it is meant that the energy wells have a different band gap from one another, generally increasing or decreasing from one well to another monotonically.

摘要翻译： 提供了一种具有分级能量阱的太阳能电池的方法和装置。 太阳能电池的有源区包括纳米结构。 纳米结构由包含III-V族化合物半导体的材料和改变III-V族化合物半导体的带隙的元素形成。 例如，III-V族化合物半导体可以是氮化镓（GaN）。 作为示例，“带隙改变元件”可以是铟（In）。 活性区域中的铟的浓度是不均匀的，使得活性区域具有被屏障隔开的许多能量阱。 能量井可以“分级”，这意味着能量阱具有彼此不同的带隙，通常从一个孔单调增加或减小。

公开(公告)号：US07357018B2

公开(公告)日：2008-04-15

申请号：US11351515

申请日：2006-02-10

申请人： Bo U Curry ,  Sungsoo Yi

发明人： Bo U Curry ,  Sungsoo Yi

IPC分类号： G01B5/28 ,  G01N23/00

CPC分类号： G01Q70/12 ,  G01Q60/30 ,  G01Q60/42

摘要： A measurement inside a specimen is performed by providing a nanoscale FET probe comprising a cantilever element and a nanowire extending from the cantilever element. The nanowire is electrically connected to the cantilever element at at least one of the ends of the nanowire. The nanowire is coated along at least part of the length thereof with molecules of a capture agent. The cantilever element is moved to insert the nanowire onto the specimen. An electrical property of the nanoscale FET probe is monitored to detect binding events between the capture agent molecules and an analyte of interest inside the specimen.

摘要翻译： 通过提供包括悬臂元件和从悬臂元件延伸的纳米线的纳米级FET探针来进行样本内的测量。 纳米线在纳米线的至少一个端部处电连接到悬臂元件。 沿其长度的至少一部分将纳米线与捕获剂的分子一起涂覆。 移动悬臂元件以将纳米线插入到样品上。 监测纳米级FET探针的电性能，以检测捕获剂分子与样品内感兴趣的分析物之间的结合事件。

公开(公告)号：US20070186628A1

公开(公告)日：2007-08-16

申请号：US11351515

申请日：2006-02-10

申请人： Bo Curry ,  Sungsoo Yi

发明人： Bo Curry ,  Sungsoo Yi

IPC分类号： G01B5/28

CPC分类号： G01Q70/12 ,  G01Q60/30 ,  G01Q60/42

摘要： The nanoscale FET probe comprises a cantilever element and, at one end of the cantilever element, a nanowire that extends from the cantilever element. The nanowire is electrically connected to the cantilever element at at least one of the ends of the nanowire. The nanowire is capable of being coated with molecules of a capture agent along at least part of its length.

摘要翻译： 纳米级FET探针包括悬臂元件，并且在悬臂元件的一端具有从悬臂元件延伸的纳米线。 纳米线在纳米线的至少一个端部处电连接到悬臂元件。 纳米线能够沿着其长度的至少一部分被包裹有捕获剂的分子。

公开(公告)号：US20070186627A1

公开(公告)日：2007-08-16

申请号：US11351511

申请日：2006-02-10

申请人： Sungsoo Yi ,  Danielle Chamberlin

发明人： Sungsoo Yi ,  Danielle Chamberlin

IPC分类号： G01B5/28

CPC分类号： G01Q60/38 ,  G01Q70/12

摘要： The high aspect ratio atomic force microscope (AFM) probe has a cantilever element with a crystalline growth surface at one end. The AFM probe additionally has a semiconductor nanowire extending substantially orthogonally from the growth surface. The AFM probe is made by covering the cantilever element with sacrificial material, leaving at least part of the growth surface exposed; depositing catalyst metal on the exposed growth surface; removing the sacrificial material leaving the catalyst metal on the growth surface, and growing a semiconductor nanowire extending from the growth surface using the catalyst metal left on the growth surface. The catalyst metal remains at the distal end of the nanowire during the growing.

摘要翻译： 高纵横比原子力显微镜（AFM）探针具有在一端具有晶体生长表面的悬臂元件。 AFM探针另外具有从生长表面基本上垂直延伸的半导体纳米线。 AFM探针通过用牺牲材料覆盖悬臂元件制成，使生长表面的至少一部分暴露; 在暴露的生长表面上沉积催化剂金属; 去除离开生长表面上的催化剂金属的牺牲材料，以及使用留在生长表面上的催化剂金属从生长表面生长半导体纳米线。 催化剂金属在生长期间保留在纳米线的远端。

公开(公告)号：US09012250B2

公开(公告)日：2015-04-21

申请号：US13448453

申请日：2012-04-17

申请人： Sungsoo Yi ,  Nathan F. Gardner ,  Qi Laura Ye

发明人： Sungsoo Yi ,  Nathan F. Gardner ,  Qi Laura Ye

IPC分类号： H01L29/72 ,  H01L33/00 ,  H01L33/12 ,  H01L33/04 ,  H01S5/323

CPC分类号： H01L33/007 ,  H01L33/04 ,  H01L33/12 ,  H01S5/32341

摘要： A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.

摘要翻译： 一种器件包括：半导体结构，包括设置在n型区域和p型区域之间的III族氮化物发光层和设置在n型区域和p型区域之一内的多个层对。 每层对包括与InGaN层直接接触的InGaN层和凹坑填充层。 凹坑填充层可以填充形成在InGaN层中的凹坑。