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公开(公告)号：US11961942B2
公开(公告)日：2024-04-16
申请号：US18188261
申请日：2023-03-22
申请人： NIKKISO CO., LTD.
发明人： Noritaka Niwa , Tetsuhiko Inazu
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/14 , H01L33/382 , H01L2933/0016
摘要： The semiconductor light-emitting element includes an n-type semiconductor layer; an active layer on the n-type semiconductor layer; a p-type semiconductor layer on the active layer; a p-side contact electrode in contact with the p-type semiconductor layer; a p-side current diffusion layer on the p-side contact electrode; an n-side contact electrode in contact with the n-type semiconductor layer; and an n-side current diffusion layer that includes a first current diffusion layer on the n-side contact electrode, and a second current diffusion layer on the first current diffusion layer, and including a TiN layer. A height difference between upper surfaces of the p-side contact electrode and the first current diffusion layer is 100 nm or smaller; and a height difference between upper surfaces of the p-side current diffusion layer and the second current diffusion layer is 100 nm or smaller.
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公开(公告)号：US11489091B2
公开(公告)日：2022-11-01
申请号：US16370791
申请日：2019-03-29
IPC分类号： H01L33/32 , H01L33/22 , H01L33/00 , H01L21/3065 , H01L33/40
摘要： A semiconductor light emitting device includes a light extraction layer having a light extraction surface. The light extraction layer includes: a plurality of cone-shaped parts formed in an array on the light extraction surface, and a plurality of granular parts formed both on a side part of the cone-shaped part and in a space between adjacent cone-shaped parts. A method of manufacturing the semiconductor light emitting device includes: forming a mask having an array pattern on the light extraction layer; and etching the mask and the light extraction layer from above the mask. The etching includes first dry-etching performed until an entirety of the mask is removed and second dry-etching performed to further dry-etch the light extraction layer after the mask is removed.
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公开(公告)号：US11387385B2
公开(公告)日：2022-07-12
申请号：US16996368
申请日：2020-08-18
申请人： NIKKISO CO., LTD.
发明人： Noritaka Niwa , Tetsuhiko Inazu
摘要： A semiconductor light-emitting element includes: an n-type semiconductor layer made of an n-type AlGaN-based semiconductor material; an active layer made of an AlGaN-based semiconductor material provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; a p-side contact electrode made of Rh and in contact with the p-type semiconductor layer; a p-side electrode covering layer made of TiN that covers the p-side contact electrode; a dielectric protective layer that covers the n-type semiconductor layer, the active layer, the p-type semiconductor layer, and the p-side electrode covering layer; and a p-side pad electrode in contact with the p-side electrode covering layer in a p-side opening that extends through the dielectric protective layer on the p-side contact electrode.
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公开(公告)号：US11626540B2
公开(公告)日：2023-04-11
申请号：US17012973
申请日：2020-09-04
申请人： NIKKISO CO., LTD.
发明人： Noritaka Niwa , Tetsuhiko Inazu
摘要： A semiconductor light-emitting element includes: an n-type semiconductor layer; an active layer; a p-side contact electrode made of Rh; a p-side electrode covering layer made of Ti or TiN that covers the p-side contact electrode; a first protective layer made of SiO2 or SiON that covers an upper surface and a side surface of the p-side electrode covering layer in a portion different from that of a first p-side pad opening; a second protective layer made of Al2O3 that covers the first protective layer, a side surface of a p-side semiconductor layer, and a side surface of the active layer in a portion different from that of a second p-side pad opening; and a p-side pad electrode that is in contact with the p-side electrode covering layer in the first p-side pad opening and the second p-side pad opening.
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公开(公告)号：US11355670B2
公开(公告)日：2022-06-07
申请号：US16173768
申请日：2018-10-29
申请人： Nikkiso Co., Ltd
发明人： Haruhito Sakai , Noritaka Niwa , Tetsuhiko Inazu , Cyril Pernot
摘要： A deep ultraviolet light emitting device includes: a light extraction surface; an n-type semiconductor layer provided on the light extraction surface; an active layer having a band gap of 3.4 eV or larger; and a p-type semiconductor layer provided on the active layer. Deep ultraviolet light emitted by the active layer is output outside from the light extraction surface. A side surface of the active layer is inclined with respect to an interface between the n-type semiconductor layer and the active layer, and an angle of inclination of the side surface is not less than 15° and not more than 50°.
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6.发明授权公开(公告)号：US10665751B2
公开(公告)日：2020-05-26
申请号：US16111672
申请日：2018-08-24
申请人： NIKKISO CO., LTD.
发明人： Noritaka Niwa , Tetsuhiko Inazu
摘要： A method of manufacturing a semiconductor light-emitting device includes: preparing a layer stack including a light-extracting layer and a light-emitting structure, the light-extracting layer having a light-extracting surface in which a rugged structure is provided, the light-emitting structure being provided on a principal surface opposite to the light-extracting surface of the light-extracting layer; forming a mask over the rugged structure in a partial region of the light-extracting surface; forming a planar surface by removing the rugged structure that is exposed without having the mask formed thereover; and singulating the layer stack by irradiating the planar surface with a laser and cutting at least the light-extracting layer at a position of the planar surface.
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公开(公告)号：US11769860B2
公开(公告)日：2023-09-26
申请号：US17244211
申请日：2021-04-29
申请人： NIKKISO CO., LTD.
发明人： Noritaka Niwa , Tetsuhiko Inazu
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/14 , H01L33/382 , H01L2933/0016
摘要： The semiconductor light-emitting element has an n-type semiconductor layer; an active layer provided on a first upper surface of the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; a p-side contact electrode provided in contact with the upper surface of the p-type semiconductor layer; a p-side current diffusion layer provided on the p-side contact electrode in a region narrower than a formation region of the p-side contact electrode; a p-side pad electrode provided on the p-side current diffusion layer; an n-side contact electrode provided in contact with a second upper surface of the n-type semiconductor layer; an n-side current diffusion layer provided on the n-side contact electrode over a region wider than a formation region of the n-side contact electrode, and including a TiN layer; and an n-side pad electrode provided on the n-side current diffusion layer.
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公开(公告)号：US11652191B2
公开(公告)日：2023-05-16
申请号：US17244330
申请日：2021-04-29
申请人： NIKKISO CO., LTD.
发明人： Noritaka Niwa , Tetsuhiko Inazu
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/14 , H01L33/382 , H01L2933/0016
摘要： The semiconductor light-emitting element includes an n-type semiconductor layer; an active layer on the n-type semiconductor layer; a p-type semiconductor layer on the active layer; a p-side contact electrode in contact with the p-type semiconductor layer; a p-side current diffusion layer on the p-side contact electrode; an n-side contact electrode in contact with the n-type semiconductor layer; and an n-side current diffusion layer that includes a first current diffusion layer on the n-side contact electrode, and a second current diffusion layer on the first current diffusion layer, and including a TiN layer. A height difference between upper surfaces of the p-side contact electrode and the first current diffusion layer is 100 nm or smaller; and a height difference between upper surfaces of the p-side current diffusion layer and the second current diffusion layer is 100 nm or smaller.
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公开(公告)号：US11563139B2
公开(公告)日：2023-01-24
申请号：US16811423
申请日：2020-03-06
申请人： Nikkiso Co., Ltd
发明人： Tetsuhiko Inazu , Cyril Pernot
摘要： A deep ultraviolet light emitting device includes: an electron block layer of a p-type AlGaN-based semiconductor material or a p-type AlN-based semiconductor material provided on a support substrate; an active layer of an AlGaN-based semiconductor material provided on the electron block layer; an n-type clad layer of an n-type AlGaN-based semiconductor material provided on the active layer; an n-type contact layer provided on a partial region of the n-type clad layer and made of an n-type semiconductor material containing gallium nitride (GaN); and an n-side electrode formed on the n-type contact layer. The n-type contact layer has a band gap smaller than that of the n-type clad layer.
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公开(公告)号：US11322654B2
公开(公告)日：2022-05-03
申请号：US16993836
申请日：2020-08-14
申请人： NIKKISO CO., LTD.
发明人： Yusuke Matsukura , Tetsuhiko Inazu , Cyril Pernot
摘要： A nitride semiconductor light-emitting element includes an active layer that emits ultraviolet light, a p-type AlGaN-based electron blocking stack body that is located on the active layer and has a structure formed by sequentially stacking a first electron blocking layer, a second electron blocking layer and a third electron blocking layer from the active layer side, and a p-type contact layer located on the electron blocking stack body. An Al composition ratio in the second electron blocking layer is lower than an Al composition ratio in the first electron blocking layer, and an Al composition ratio in the third electron blocking layer decreases from the second electron blocking layer side toward the p-type contact layer side.
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