公开(公告)号：US20090068407A1

公开(公告)日：2009-03-12

申请号：US11910683

申请日：2006-04-04

申请人： Nikolai Abrosimov ,  Anke Luedge ,  Andris Muiznieks ,  Helge Riemann

发明人： Nikolai Abrosimov ,  Anke Luedge ,  Andris Muiznieks ,  Helge Riemann

IPC分类号： B32B3/30 ,  H01L21/304

CPC分类号： C30B13/30 ,  C30B13/20 ,  C30B29/06 ,  Y10T428/24479

摘要： A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.

摘要翻译： 制造具有大致多边形横截面且具有与区域拉伸的Si晶体相同的材料性质的单晶Si晶片和单晶Si晶片的方法。 该方法包括从旋转的悬挂熔滴垂直向下拉动晶体的至少一个瓶颈。 晶体的旋转速度降低到0至小于1rpm。 在晶体生长阶段，Si单晶锭以大致多边形横截面垂直向下拉。 使用电感器在与拉出的Si单晶锭的截面形状相对应的晶体的生长相界面处产生温度分布。 生长以期望的拉伸长度结束，并且将Si单晶锭切割成具有大致多边形横截面的晶片。

公开(公告)号：US08337615B2

公开(公告)日：2012-12-25

申请号：US11910683

申请日：2006-04-04

申请人： Nikolai Abrosimov ,  Anke Luedge ,  Andris Muiznieks ,  Helge Riemann

发明人： Nikolai Abrosimov ,  Anke Luedge ,  Andris Muiznieks ,  Helge Riemann

IPC分类号： C30B11/00 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B13/30 ,  C30B13/20 ,  C30B29/06 ,  Y10T428/24479

摘要： A method of making a single-crystalline Si wafer with an approximately polygonal cross section and having a material property that is the same as a zone-pulled Si crystal, and the single-crystalline Si wafer. The method includes pulling at least one bottle neck of a crystal vertically downwards from a rotating hanging melt drop. The rotational speed of the crystal is reduced to between 0 and less than 1 rpm. In a crystal-growth phase, a Si single crystal ingot is pulled vertically downwards with an approximately polygonal cross section. An inductor is used to generate a temperature profile at a growth phase boundary of the crystal that corresponds to the shape of a cross section of the pulled Si single crystal ingot. The growth is ended at a desired pulling length and the Si single crystal ingot is cut into wafers having an approximately polygonal cross section.

摘要翻译： 制造具有近似多边形横截面且具有与区域拉伸的Si晶体相同的材料性质的单晶Si晶片和单晶Si晶片的方法。 该方法包括从旋转的悬挂熔滴垂直向下拉动晶体的至少一个瓶颈。 晶体的旋转速度降低到0至小于1rpm。 在晶体生长阶段，Si单晶锭以大致多边形横截面垂直向下拉。 使用电感器在与拉出的Si单晶锭的截面形状相对应的晶体的生长相界面处产生温度分布。 生长以期望的拉伸长度结束，并且将Si单晶锭切割成具有大致多边形横截面的晶片。

公开(公告)号：US20050188918A1

公开(公告)日：2005-09-01

申请号：US10513320

申请日：2003-05-06

申请人： Nikolai Abrosimov ,  Helge Riemann

发明人： Nikolai Abrosimov ,  Helge Riemann

IPC分类号： B22D11/00 ,  B22D11/01 ,  C01B33/02 ,  C30B13/00 ,  C30B13/20 ,  C30B15/00 ,  C30B15/08 ,  H01L21/208 ,  C30B1/00

CPC分类号： C30B13/20 ,  C30B15/08 ,  C30B29/06 ,  Y10T117/10 ,  Y10T117/1052 ,  Y10T117/1056

摘要： The invention relates to a device for the production of crystal rods having a defined cross-section and a column-shaped polycrystalline structure by means of floating-zone continuous crystallization, comprising at least one crucible filled with crystalline material, provided with a central deviation for transporting the contents of the crucible to a growing crystal rod arranged below the crucible, whereby the central deviation plunges into the melt meniscus, also comprising means for continuously adjustable provision of crystalline material to the crucible, and means for simultaneously feeding the melt energy and adjusting the crystallization front. In order to produce crystal rods having a defined diameter and a column-shaped polycrystalline structure using heating means which are technically less complex, while at the same time guaranteeing high crystallization rates and stable phase definition, the means for simultaneously feeding the melt energy and adjusting the crystallization front on the growing crystal rod (8) is a flat induction coil (5) which has an opening, said induction coil (5) being arranged at a distance from the crucible (4) and/or being vertically moveable in relation to the crystallization front.

摘要翻译： 本发明涉及一种用于通过浮区连续结晶生产具有限定横截面的晶棒和柱状多晶结构的装置，包括至少一个填充有结晶材料的坩埚，该坩埚具有中心偏差 将坩埚的内容物输送到布置在坩埚下方的生长晶体杆上，由此中心偏离进入熔体弯月面，还包括用于连续调节地向坩埚提供结晶材料的装置，以及用于同时进料熔体能量和调节 结晶前沿。 为了制造具有规定直径的晶棒和使用技术上较不复杂的加热装置的柱状多晶结构，同时保证高结晶速率和稳定的相位定义，同时供给熔体能量并调节 生长晶棒（8）上的结晶前沿是具有开口的平坦感应线圈（5），所述感应线圈（5）布置在与坩埚（4）相距一定距离处和/或可相对于 结晶前沿。