摘要:
Techniques are disclosed for enhancing the speed at which pixel levels are read out and sampled for processing. A method of processing pixel levels includes clamping a pixel readout line to a voltage level less than a voltage corresponding to a signal sensed by an n-MOS pixel. Subsequently, the pixel readout line is coupled to an output of an n-MOS source-follower and the pixel signal is read out onto the pixel readout line through the n-MOS source-follower. The pixel signal that was read out is passed through a p-MOS source-follower to a processing circuit. Before passing the pixel signal through the p-MOS source-follower to the processing circuit, a capacitive storage node in the processing circuit is clamped to a voltage greater than a signal at an input to the p-MOS source-follower. Subsequently, an output of the p-MOS source-follower is coupled to the processing circuit, and a signal corresponding to the pixel signal is stored by the processing circuit. Similar techniques are provided for reading out and sampling p-MOS pixels.
摘要:
An A/D converter element of the successive approximation type uses its capacitors both for conversion and for calibration. A calibration face is carried out in which calibration values are obtained. These values are stored and then later used for adjustment of the values obtained from the capacitors.
摘要:
A pixel includes a photodiode and a readout node for receiving charge transferred from the photodiode. The readout node is configured to have a variable capacitance that is non-linear with respect to a voltage at the readout node. The readout node is resettable. The readout node may be configured to have a lower capacitance when reset to a reset voltage than when getting filled with charge from the photodiode. The readout node may be configured such that the capacitance of the readout node continuously increases as additional charge is received by the readout node after the readout node is reset. The readout node may be configured such that the capacitance of the readout node jumps from a first capacitance to a second capacitance after the readout node has been filled with a certain amount of charge. An image sensor includes a pixel array with a plurality of the pixels.
摘要:
A pixel includes a photodiode and a readout node for receiving charge transferred from the photodiode. The readout node is configured to have a variable capacitance that is non-linear with respect to a voltage at the readout node. The readout node is resettable. The readout node may be configured to have a lower capacitance when reset to a reset voltage than when getting filled with charge from the photodiode. The readout node may be configured such that the capacitance of the readout node continuously increases as additional charge is received by the readout node after the readout node is reset. The readout node may be configured such that the capacitance of the readout node jumps from a first capacitance to a second capacitance after the readout node has been filled with a certain amount of charge. An image sensor includes a pixel array with a plurality of the pixels.
摘要:
A pixel includes a photodiode, a first transfer gate, a second transfer gate, and a floating diffusion. The pixel may include a storage gate, and the first transfer gate may be controllable to transfer charge from the photodiode to an area under the storage gate. The storage gate is controllable to store the charge in the area under the storage gate and to transfer the charge from the area under the storage gate. The first transfer gate may be controllable among a first biasing condition in which charge is transferable to an area under the first transfer gate, a second biasing condition in which the charge is storable in the area under the first transfer gate, and a third biasing condition in which the charge is transferable out of the area under the first transfer gate. The second transfer gate is controllable to transfer charge to the floating diffusion.
摘要:
An image sensor includes a pixel array, a plurality of memory blocks, a plurality of phase-locked loops, and a plurality of serializers. The pixel array includes a plurality of pixels. The plurality of memory blocks store digital pixel data converted from analog pixel signals output from the pixel array, and are located to a particular side of the pixel array. The plurality of phase-locked loops are located to the particular side of the pixel array. The plurality of serializers are located to the particular side of the pixel array. Each serializer of the plurality of serializers is connected to receive parallel data input from one or more corresponding memory blocks of the plurality of memory blocks and is configured to convert the parallel data input to serial data output using a corresponding plurality of clock signals from a corresponding phase-locked loop of the plurality of phase-locked loops.
摘要:
A pipelined readout method in an image sensor includes receiving one or more signals from a pixel of a row of a pixel array into a column storage at least partially during a time that a previously sampled amplified output of the column storage that is based on signals provided by a previous pixel of a previously read out row of the pixel array is converted from analog to digital by an analog-to-digital conversion circuit. The method further includes performing, by the analog-to-digital conversion circuit, analog-to-digital conversion of a sampled amplified output of the column storage that is based on the one or more signals from the pixel at least partially during a time that the column storage receives at least one signal from a another pixel of a subsequently read out row of the pixel array.