摘要:
Charged-particle-beam (CPB) mapping projection-optical systems and adjustment methods for such systems are disclosed that can be performed quickly and accurately. In a typical system, an irradiation beam is emitted from a source, passes through an irradiation-optical system, and enters a Wien filter (nullEnullBnull). Upon passing through the EnullB, the irradiation beam passes through an objective-optical system and is incident on an object surface. Such impingement generates an observation beam that returns through the objective-optical system and the EnullB in a different direction to a detector via an imaging-optical system. An adjustment-beam source emits an adjustment beam used for adjusting and aligning the position of, e.g., the object surface and/or the Wien's condition of the EnullB. The adjustment beam can be off-axis relative to the objective-optical system. For such adjusting and aligning, fiducial marks (situated, e.g., in the plane of the object surface) can be used that are optimized for the CPB-optical system and the off-axis optical system. Desirably, the image formed on the detector when electrical voltage and current are not applied to the EnullB is in the same position as the image formed on the detector when electrical voltage and current are applied to the EnullB. Also provided are nullevaluation chartsnull for use in such alignments that do not require adjustment of the optical axis of the irradiation-optical system, and from which the kinetic-energy distribution of the emitted adjustment beam is stable.
摘要:
Methods are disclosed for calculating, correcting, and displaying a pattern to be defined on a segmented reticle such as used in charged-particle-beam (CPB) microlithography. In an embodiment, the methods are performed by a computer-enabled screen editor. Data concerning dimensional and configurational properties of the reticle, the microlithography apparatus with which the reticle is to be used, and the pattern to be transferred are entered. Execution of the method divides the pattern into subfields of a segmented reticle. The subfields are arranged into one or more stripes, and the respective locations of subfields within the stripe(s) are optimized. Respective pattern elements defined in the subfields may be modified to reduce space-charge and/or coulomb effects. The respective pattern portions defined in the subfields may be searched for critical pattern elements situated on division boundaries. Any such elements are corrected by modifying the pattern element or the respective subfield. Any of various steps and results obtained during execution of the method may be displayed to a user.