Charged-particle-beam mapping projection-optical systems and methods for adjusting same
    1.
    发明申请
    Charged-particle-beam mapping projection-optical systems and methods for adjusting same 有权
    带电粒子束映射投影光学系统及其调整方法

    公开(公告)号:US20040251428A1

    公开(公告)日:2004-12-16

    申请号:US10816467

    申请日:2004-03-31

    IPC分类号: G21K007/00

    摘要: Charged-particle-beam (CPB) mapping projection-optical systems and adjustment methods for such systems are disclosed that can be performed quickly and accurately. In a typical system, an irradiation beam is emitted from a source, passes through an irradiation-optical system, and enters a Wien filter (nullEnullBnull). Upon passing through the EnullB, the irradiation beam passes through an objective-optical system and is incident on an object surface. Such impingement generates an observation beam that returns through the objective-optical system and the EnullB in a different direction to a detector via an imaging-optical system. An adjustment-beam source emits an adjustment beam used for adjusting and aligning the position of, e.g., the object surface and/or the Wien's condition of the EnullB. The adjustment beam can be off-axis relative to the objective-optical system. For such adjusting and aligning, fiducial marks (situated, e.g., in the plane of the object surface) can be used that are optimized for the CPB-optical system and the off-axis optical system. Desirably, the image formed on the detector when electrical voltage and current are not applied to the EnullB is in the same position as the image formed on the detector when electrical voltage and current are applied to the EnullB. Also provided are nullevaluation chartsnull for use in such alignments that do not require adjustment of the optical axis of the irradiation-optical system, and from which the kinetic-energy distribution of the emitted adjustment beam is stable.

    摘要翻译: 公开了可以快速且准确地执行这种系统的带电粒子束(CPB)映射投影光学系统和调整方法。 在典型的系统中,照射光束从光源发出,通过照射光学系统,并进入维恩滤光片(“ExB”)。 当通过ExB时,照射光束通过物镜光学系统并且入射到物体表面上。 这种冲击产生观察光束,该观察光束经由成像光学系统通过物镜 - 光学系统和ExB以不同的方向返回到检测器。 调整光束源发射用于调整和对准例如物体表面的位置和/或ExB的维恩状态的调节光束。 调节光束可以相对于物镜光学系统偏轴。 对于这种调整和对准,可以使用为CPB光学系统和离轴光学系统优化的基准标记(例如位于物体表面的平面中)。 理想地,当电压和电流未施加到ExB时,在检测器上形成的图像与当将电压和电流施加到ExB时形成在检测器上的图像位于相同的位置。 还提供了用于这种对准的“评估图”,其不需要调整照射光学系统的光轴,并且发射的调节光束的动能分布从该对准是稳定的。

    Methods for calculating, correcting, and displaying segmented reticle patterns for use in charged-particle-beam microlithography, and screen editors utilizing such methods
    2.
    发明申请
    Methods for calculating, correcting, and displaying segmented reticle patterns for use in charged-particle-beam microlithography, and screen editors utilizing such methods 审中-公开
    用于计算,校正和显示用于带电粒子束微光刻的分段掩模图案的方法,以及利用这种方法的屏幕编辑器

    公开(公告)号:US20020116697A1

    公开(公告)日:2002-08-22

    申请号:US10081760

    申请日:2002-02-20

    申请人: Nikon Corporation

    IPC分类号: G06F017/50

    摘要: Methods are disclosed for calculating, correcting, and displaying a pattern to be defined on a segmented reticle such as used in charged-particle-beam (CPB) microlithography. In an embodiment, the methods are performed by a computer-enabled screen editor. Data concerning dimensional and configurational properties of the reticle, the microlithography apparatus with which the reticle is to be used, and the pattern to be transferred are entered. Execution of the method divides the pattern into subfields of a segmented reticle. The subfields are arranged into one or more stripes, and the respective locations of subfields within the stripe(s) are optimized. Respective pattern elements defined in the subfields may be modified to reduce space-charge and/or coulomb effects. The respective pattern portions defined in the subfields may be searched for critical pattern elements situated on division boundaries. Any such elements are corrected by modifying the pattern element or the respective subfield. Any of various steps and results obtained during execution of the method may be displayed to a user.

    摘要翻译: 公开了用于计算,校正和显示在分段掩模版上定义的图案的方法,例如在带电粒子束(CPB)微光刻中使用的图案。 在一个实施例中,这些方法由计算机启用的屏幕编辑器执行。 进入关于掩模版的尺寸和结构特性的数据,使用掩模版的微光刻设备和待转印的图案。 该方法的执行将图案划分为分段标线的子字段。 子场被布置成一个或多个条纹,并且条带内的子场的相应位置被优化。 可以修改在子场中定义的各个图案元素以减少空间电荷和/或库伦效应。 可以搜索在子场中定义的各个模式部分,以查找位于分割边界上的关键模式元素。 通过修改图案元素或相应的子场来校正任何这样的元素。 可以向用户显示在执行该方法期间获得的各种步骤和结果中的任何一个。