公开(公告)号：US20090020748A1

公开(公告)日：2009-01-22

申请号：US12175114

申请日：2008-07-17

申请人： Niu JIN ,  Paul R. Berger ,  Phillip E. Thompson

发明人： Niu JIN ,  Paul R. Berger ,  Phillip E. Thompson

IPC分类号： H01L29/15 ,  H01L21/203

CPC分类号： H01L29/88 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02584 ,  H01L29/161 ,  H01L29/165 ,  H01L29/882 ,  Y10S438/979

摘要： Some disclosed interband tunneling diodes comprise a plurality of substantially coherently strained layers including layers selected from a group consisting of silicon, germanium, and alloys of silicon and germanium, wherein at least one of said substantially coherently strained layers is tensile strained. Some disclosed resonant interband tunneling diodes comprise a plurality of substantially coherently strained layers including layers selected from a group consisting of silicon, germanium, and alloys of silicon and germanium, wherein at least one of said substantially coherently strained layers defines a barrier to non-resonant tunnel current. Some disclosed interband tunneling diodes comprise a plurality of substantially coherently strained layers, wherein at least one of said substantially coherently strained layers is tensile strained. Some disclosed resonant interband tunneling diodes comprise a plurality of substantially coherently strained layers, wherein at least one of said substantially coherently strained layers defines a barrier to non-resonant tunnel current.

摘要翻译： 一些公开的带间隧道二极管包括多个基本上相干应变的层，包括选自硅，锗以及硅和锗的合金的层，其中所述基本上相干应变层中的至少一个是拉伸的。 一些公开的谐振频带隧道二极管包括多个基本上相干应变的层，包括选自硅，锗以及硅和锗的合金的层，其中所述基本上相干应变层中的至少一个限定非谐振的势垒 隧道电流。 一些公开的带间隧道二极管包括多个基本上相干应变的层，其中所述基本上相干应变层中的至少一个是拉伸应变的。 一些公开的谐振频带隧道二极管包括多个基本上相干应变的层，其中至少一个所述基本上相干应变的层限定非谐振隧道电流的阻挡。