公开(公告)号：US20190027644A1

公开(公告)日：2019-01-24

申请号：US15714749

申请日：2017-09-25

申请人： Elliott R. Brown ,  Weidong Zhang ,  Tyler Growden ,  Paul R. Berger ,  David Storm ,  David Meyer

发明人： Elliott R. Brown ,  Weidong Zhang ,  Tyler Growden ,  Paul R. Berger ,  David Storm ,  David Meyer

IPC分类号： H01L33/06 ,  H01L29/20 ,  H01L29/88 ,  H01L33/32 ,  H01S5/343 ,  H01L33/50 ,  H01S5/14 ,  H01S5/187 ,  H01S5/02 ,  H01S5/042 ,  H01S5/183 ,  H01L33/00 ,  H01L33/12 ,  C02F1/32

摘要： Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.

公开(公告)号：US09209285B2

公开(公告)日：2015-12-08

申请号：US13496542

申请日：2010-09-13

申请人： Paul R. Berger

发明人： Paul R. Berger

IPC分类号： H01L27/092 ,  H01L29/739

CPC分类号： H01L21/02532 ,  H01L21/02381 ,  H01L21/02387 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02584 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/7391

摘要： A p-channel tunneling field effect transistor (TFET) is selected from a group consisting of (i) a multi-layer structure of group IV layers and (ii) a multi-layer structure of group III-V layers. The p-channel TFET includes a channel region comprising one of a silicon-germanium alloy with non-zero germanium content and a ternary III-V alloy. An n-channel TFET is selected from a group consisting of (i) a multi-layer structure of group IV layers and (ii) a multi-layer structure of group III-V layers. The n-channel TFET includes an n-type region, a p-type region with a p-type delta doping, and a channel region disposed between and spacing apart the n-type region and the p-type region. The p-channel TFET and the n-channel TFET may be electrically connected to define a complementary field-effect transistor element. TFETs may be fabricated from a silicon-germanium TFET layer structure grown by low temperature (500 degrees Centigrade) molecular beam epitaxy.

摘要翻译： p沟道隧道场效应晶体管（TFET）从由（i）IV族层的多层结构和（ii）III-V族层的多层结构组成的组中选择。 p沟道TFET包括包含具有非零锗含量的硅 - 锗合金和三元III-V合金之一的沟道区。 n沟道TFET选自（i）IV族层的多层结构和（ii）III-V族层的多层结构的组。 n沟道TFET包括n型区域，具有p型δ掺杂的p型区域，以及设置在n型区域和p型区域之间并间隔开的n型区域和p型区域的沟道区域。 p沟道TFET和n沟道TFET可以电连接以限定互补的场效应晶体管元件。 TFET可以由通过低温（500摄氏度）分子束外延生长的硅 - 锗TFET层结构制成。

公开(公告)号：US07297990B1

公开(公告)日：2007-11-20

申请号：US10903442

申请日：2004-07-30

申请人： Paul R. Berger ,  Phillip E. Thompson ,  Niu Jin

发明人： Paul R. Berger ,  Phillip E. Thompson ,  Niu Jin

IPC分类号： H01L29/00

CPC分类号： H01L29/885

摘要： A silicon-based interband tunneling diode (10, 110) includes a degenerate p-type doping (22, 130) of acceptors, a degenerate n-type doping (32, 118) of donors disposed on a first side of the degenerate p-type doping (22, 130), and a barrier silicon-germanium layer (20, 136) disposed on a second side of the degenerate p-type doping (22, 130) opposite the first side. The barrier silicon-germanium layer (20, 136) suppresses diffusion of acceptors away from a p/n junction defined by the degenerate p-type and n-type dopings (22, 32, 118, 130).

摘要翻译： 基于硅的带间隧穿二极管（10,110）包括简并p型掺杂（22,130）的受体，退化的n型掺杂（32,118）的供体设置在退化p- 型掺杂（22,130）和位于与第一侧相对的简并p型掺杂（22,130）的第二侧上的势垒硅 - 锗层（20,136）。 阻挡硅 - 锗层（20,136）抑制受体的扩散远离由简并p型和n型掺杂（22,32，118,130）限定的p / n结。

公开(公告)号：US07015497B1

公开(公告)日：2006-03-21

申请号：US10649046

申请日：2003-08-27

申请人： Paul R. Berger

发明人： Paul R. Berger

IPC分类号： H01L29/06

CPC分类号： H01L29/7613 ,  B82Y10/00 ,  B82Y30/00 ,  H01L29/882 ,  Y10S977/933

摘要： The present invention provides a method for forming quantum tunneling devices comprising the steps of: (1) providing a quantum well, the quantum well comprising a composite material, the composite material comprising at least a first and a second material; and (2) processing the quantum well so as to form at least one segregated quantum tunneling structure encased within a shell comprised of a material arising from processing the composite material, wherein each segregated quantum structure is substantially comprised of the first material. The present invention also comprises additional methods of formation, quantum tunneling devices, said electronic devices.

摘要翻译： 本发明提供了一种用于形成量子隧穿装置的方法，包括以下步骤：（1）提供量子阱，所述量子阱包括复合材料，所述复合材料至少包括第一和第二材料; 并且（2）处理量子阱以便形成包封在壳体内的至少一个分离的量子隧穿结构，该壳体由加工复合材料产生的材料组成，其中每个分离的量子结构基本上由第一材料组成。 本发明还包括附加的形成方法，量子隧穿装置，所述电子装置。

公开(公告)号：US10461216B2

公开(公告)日：2019-10-29

申请号：US15714749

申请日：2017-09-25

申请人： Elliott R. Brown ,  Weidong Zhang ,  Tyler Growden ,  Paul R. Berger ,  David Storm ,  David Meyer

发明人： Elliott R. Brown ,  Weidong Zhang ,  Tyler Growden ,  Paul R. Berger ,  David Storm ,  David Meyer

IPC分类号： H01L33/06 ,  H01L29/88 ,  H01L33/32 ,  H01S5/343 ,  H01S5/14 ,  H01S5/187 ,  H01S5/02 ,  H01S5/042 ,  H01S5/183 ,  H01L33/00 ,  H01L33/12 ,  C02F1/32 ,  H01L29/20 ,  H01L33/50

摘要： Gallium nitride based devices and, more particularly to the generation of holes in gallium nitride based devices lacking p-type doping, and their use in light emitting diodes and lasers, both edge emitting and vertical emitting. By tailoring the intrinsic design, a wide range of wavelengths can be emitted from near-infrared to mid ultraviolet, depending upon the design of the adjacent cross-gap recombination zone. The innovation also provides for novel circuits and unique applications, particularly for water sterilization.

公开(公告)号：US20100084627A1

公开(公告)日：2010-04-08

申请号：US11592419

申请日：2006-11-03

申请人： Paul R. Berger ,  Woo-Jun Yoon

发明人： Paul R. Berger ,  Woo-Jun Yoon

IPC分类号： H01L47/02

CPC分类号： H01L47/00

摘要： A device includes: a first electrical contact; a second electrical contact; a semiconducting or semimetallic organic layer disposed at least partially between the first and second electrical contacts; and a tunneling barrier layer disposed at least partially between the semiconducting or semimetallic organic layer and the first electrical contact. The tunneling barrier layer has a thickness effective to enable flow of an electrical current through the tunneling barrier layer responsive to an operative electrical bias applied across the first and second electrical contacts, the electrical current exhibiting negative differential resistance for at least some applied electrical bias values. Circuits are also disclosed that utilize one or more negative differential resistance polymer diodes to implement logic, memory, or mixed signal applications.

公开(公告)号：US5208821A

公开(公告)日：1993-05-04

申请号：US825208

申请日：1992-01-24

申请人： Paul R. Berger ,  Niloy K. Dutta ,  William S. Hobson ,  John Lopata

发明人： Paul R. Berger ,  Niloy K. Dutta ,  William S. Hobson ,  John Lopata

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/227

CPC分类号： H01S5/227

摘要： This invention pertains to buried heterostructure lasers which have been fabricated using a single step MOCVD growth of an MQW laser structure over a pattern etched GaAs substrate. The wet chemical etching of grooves having a dovetailed cross-section and being parallel to the [011] direction in GaAs substrates produced reentrant mesas which resulted in isolated laser active regions buried by the AlGaAs cladding layer. The 250 .mu.m long uncoated lasers emit at about 1 .mu.m. Lasers with coated facets have threshold currents of 20 mA and emit >100 mW per facet under room temperature operation. The external differential quantum efficiency for currents of from 30 mA to about 50 mA is found to be nearly independent of temperature in the range of 10.degree. C. to 90.degree. C. suggesting a low temperature dependence of leakage current.

公开(公告)号：US07303969B2

公开(公告)日：2007-12-04

申请号：US09934334

申请日：2001-08-21

申请人： Paul R. Berger ,  Phillip E. Thompson ,  Roger Lake ,  Karl Hobart ,  Sean L. Rommel

发明人： Paul R. Berger ,  Phillip E. Thompson ,  Roger Lake ,  Karl Hobart ,  Sean L. Rommel

IPC分类号： H01L21/20

CPC分类号： B82Y10/00 ,  H01L29/66151 ,  H01L29/882 ,  Y10S438/979 ,  Y10S438/983

摘要： Interband tunnel diodes which are compatible with Si-based processes such as, but not limited to, CMOS and SiGe HBT fabrication. Interband tunnel diodes are disclosed (i) with spacer layers surrounding a tunnel barrier; (ii) with a quantum well adjacent to, but not necessarily in contact with, one of the injectors, and (iii) with a first quantum well adjacent to, but not necessarily in contact with, the bottom injector and a second quantum well adjacent to, but not necessarily in contact with, the top injector. Process parameters include temperature process for growth, deposition or conversion of the tunnel diode and subsequent thermal cycling which to improve device benchmarks such as peak current density and the peak-to-valley current ratio.

摘要翻译： 与Si基工艺（例如但不限于CMOS和SiGe HBT制造）兼容的带间隧道二极管。 公开了带间隧道二极管（i）具有围绕隧道势垒的间隔层; （ii）具有与喷射器之一相邻但不一定接触的量子阱，以及（iii）与底部喷射器相邻但不一定与底部喷射器相邻的第一量子阱以及相邻的第二量子阱 但不一定与顶部喷射器接触。 工艺参数包括用于隧道二极管的生长，沉积或转换的温度过程以及随后的热循环，以改进器件基准，例如峰值电流密度和峰谷电流比。

公开(公告)号：US06878297B1

公开(公告)日：2005-04-12

申请号：US10009078

申请日：2000-06-01

申请人： Paul R. Berger ,  Stephen Karl Heeks

发明人： Paul R. Berger ,  Stephen Karl Heeks

IPC分类号： H01L27/32 ,  H01L51/40 ,  H01L51/50 ,  H01L51/52 ,  H01B13/00

CPC分类号： H01L51/0004 ,  H01L27/3246 ,  H01L51/5036 ,  H01L51/5231 ,  H01L51/5265

摘要： A method for forming a patterned layer of a light-emissive material on a substrate, comprising the steps of providing a holed layer on the surface of the substrate, the holed layer being permanently attached to the substrate and defining a plurality of holes through which the underlying substrate is exposed, and applying a light-emissive material to the surface of the holed layer opposite the substrate and displacing the light-emissive material in fluid form across the surface of the holed layer so as to selectively deposit the material only in the holes of the holed layer.

摘要翻译： 一种用于在衬底上形成发光材料的图案化层的方法，包括以下步骤：在衬底的表面上提供带孔层，所述孔洞永久地附着在衬底上并且限定多个孔， 暴露底层衬底，并将光发射材料施加到与衬底相对的孔洞的表面，并将流体形式的发光材料移动穿过孔穴层的表面，以便选择性地将材料沉积在孔中 的洞穴层。

公开(公告)号：US5780916A

公开(公告)日：1998-07-14

申请号：US541417

申请日：1995-10-10

申请人： Paul R. Berger ,  Wei Gao

发明人： Paul R. Berger ,  Wei Gao

IPC分类号： H01L31/108 ,  H01L21/095 ,  H01L29/47

CPC分类号： H01L31/1085

摘要： A metal-semiconductor-metal (MSM) photodetector, specifically a new, improved low noise device is disclosed. The disclosed device is a MSM photodiode in which the cathode and anode are made of different materials with optimal Schottky barrier heights. One of these materials is chosen to provide a high ratio of Schottky barrier height to hole transport and the other to provide a high ratio of Schottky barrier height to electron transport. The disclosed MSM photodetector is designed to allow each Schottky barrier to be individually optimized to the point that a wide bandgap Schottky barrier enhancement layer and its associated heterointerface may become unnecessary. Elimination of the charge buildup at the heterointerface enhances carrier extraction resulting in photodetectors with elevated quantum efficiency and enhanced bandwidths.

摘要翻译： 公开了一种金属 - 半导体 - 金属（MSM）光电探测器，特别是一种新的改进的低噪声器件。 所公开的器件是MSM光电二极管，其中阴极和阳极由具有最佳肖特基势垒高度的不同材料制成。 选择这些材料之一以提供高比例的肖特基势垒高度与空穴传输，另一种则提供高比例的肖特基势垒高度与电子传输。 所公开的MSM光电检测器被设计成允许每个肖特基势垒被单独地优化到宽带隙肖特基势垒增强层及其相关的异质界面可能变得不必要的程度。 消除异质界面处的电荷积累增强载体提取，导致具有提高的量子效率和增强的带宽的光电探测器。