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公开(公告)号：US20060204854A1
公开(公告)日：2006-09-14
申请号：US10399377
申请日：2001-10-18
IPC分类号： H01M10/40
CPC分类号： H01M10/052 , C08J5/20 , C08J5/2256 , C08L71/02 , H01G9/028 , H01G9/038 , H01G11/56 , H01M4/382 , H01M4/525 , H01M10/0565 , H01M2300/0085 , Y02E60/13 , C08L2666/04
摘要： A gel-type polymer electrolyte, wherein said polymer comprises (A) an ethylene-unsaturated carboxylic acid copolymer or a derivative thereof and (B) a polyalkylene oxide having a hydroxyl group at one terminal thereof or a derivative thereof, which are bonded together by an ester bond. The gel-type polymer electrolyte has a high ionic conductivity, and makes it possible to provides a cell which has excellent charge/discharge characteristics at low temperatures as well as at high temperatures.
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公开(公告)号：US07557166B2
公开(公告)日：2009-07-07
申请号：US10399377
申请日：2001-10-18
CPC分类号： H01M10/052 , C08J5/20 , C08J5/2256 , C08L71/02 , H01G9/028 , H01G9/038 , H01G11/56 , H01M4/382 , H01M4/525 , H01M10/0565 , H01M2300/0085 , Y02E60/13 , C08L2666/04
摘要： A gel-type polymer electrolyte, wherein said polymer comprises (A) an ethylene-unsaturated carboxylic acid copolymer or a derivative thereof and (B) a polyalkylene oxide having a hydroxyl group at one terminal thereof or a derivative thereof, which are bonded together by an ester bond. The gel-type polymer electrolyte has a high ionic conductivity, and makes it possible to provides a cell which has excellent charge/discharge characteristics at low temperatures as well as at high temperatures.
摘要翻译： 一种凝胶型聚合物电解质，其中所述聚合物包含（A）乙烯 - 不饱和羧酸共聚物或其衍生物和（B）其末端具有羟基的聚环氧烷或其衍生物，它们通过 酯键。 凝胶型聚合物电解质具有高的离子传导性，并且可以提供在低温以及高温下具有优异充电/放电特性的电池。
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公开(公告)号：US20100159338A1
公开(公告)日：2010-06-24
申请号：US12659158
申请日：2010-02-26
申请人： Hiroe Nakagawa , Toshiyuki Nukada , Yuki Fujimoto
发明人： Hiroe Nakagawa , Toshiyuki Nukada , Yuki Fujimoto
IPC分类号： H01M6/16
CPC分类号： H01M10/0525 , H01G11/06 , H01G11/60 , H01M4/133 , H01M10/0567 , H01M10/0568 , H01M2300/0025 , Y02E60/13
摘要： A nonaqueous electrolyte includes an organic solvent and a lithium salt dissolved in the organic solvent, and a quaternary ammonium salt in an amount of 0.06 mol/L or greater and 0.5 mol/L or less, the quaternary ammonium salt having a structure represented by (chemical formula 3): wherein R is an organic linking group or an organic linking group forming an aromatic ring, the organic linking groups each having a main chain which has 4-5 atoms and is constituted of at least one member selected from carbon, oxygen, nitrogen, sulfur, and phosphorus and having one single-bond end and one double-bond end; R1 is an alkyl group having 1-6 carbon atoms or an alkyl group in which at least one of the hydrogen atoms has been replaced by a fluorine atom; and X− is a fluorine-containing anion.
摘要翻译： 非水电解质包括溶解在有机溶剂中的有机溶剂和锂盐，0.06mol / L以上且0.5mol / L以下的季铵盐，具有由（ 化学式3）：其中R是有机连接基团或形成芳环的有机连接基团，有机连接基团各自具有4-5个原子的主链，并且由至少一种选自碳，氧 ，氮，硫和磷，并具有一个单键端和一个双键末端; R1是具有1-6个碳原子的烷基或其中至少一个氢原子被氟原子代替的烷基; X是含氟阴离子。
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公开(公告)号：US06999296B2
公开(公告)日：2006-02-14
申请号：US10767105
申请日：2004-01-29
申请人： Susumu Kurosawa , Yuki Fujimoto
发明人： Susumu Kurosawa , Yuki Fujimoto
CPC分类号： H01L27/0808 , H01L27/0811
摘要： A P type substrate is provided on a surface thereof with varactor elements. The varactor element has an N well formed on the surface of the P type substrate, and a gate insulating film is formed on the N well, with a polysilicon layer formed further thereon. On the other hand, the varactor element has an N well formed on the surface of the P type substrate, and a gate insulating film, greater than the gate insulating film in thickness, is formed on the N well. The polysilicon layer is then formed on the gate insulating film. Furthermore, the polysilicon layer is connected to a gate terminal, while the N well is connected to an S/D terminal via N+ diffusion layers.
摘要翻译： 在其表面上设置有可变电抗器元件的P型基板。 可变电抗器元件在P型衬底的表面上形成有N阱，并且在N阱上形成栅极绝缘膜，其中进一步形成多晶硅层。 另一方面，可变电抗器元件在P型衬底的表面上形成有N阱，并且在N阱上形成大于栅极绝缘膜厚度的栅极绝缘膜。 然后在栅极绝缘膜上形成多晶硅层。 此外，多晶硅层连接到栅极端子，而N阱通过N + +扩散层连接到S / D端子。
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公开(公告)号：US07439819B2
公开(公告)日：2008-10-21
申请号：US10566287
申请日：2004-08-03
申请人： Tsuyoshi Ohshima , Shigehisa Kurogo , Masayuki Ishikawa , Susumu Kurosawa , Yuki Fujimoto , Yasutaka Nakashiba
发明人： Tsuyoshi Ohshima , Shigehisa Kurogo , Masayuki Ishikawa , Susumu Kurosawa , Yuki Fujimoto , Yasutaka Nakashiba
CPC分类号： H01L27/0811 , H01L27/0808 , H03B5/04 , H03B5/366
摘要： Deterioration in frequency stability with time in a conventional piezoelectric oscillator using an accumulation type MOS capacitance element is improved. A P-channel transistor type or an N-channel transistor type is used as a MOS capacitance element in a variable capacitance circuit used in a piezoelectric oscillator. A bias voltage is applied between P-type or N-type extraction electrodes formed in source and drain regions and an N-type extraction electrode provided in an N-well region or a P-type extraction electrode provided in a P-well region. Instability in the MOS capacitance element with time is thus eliminated.
摘要翻译： 在使用积聚型MOS电容元件的传统压电振荡器中频率稳定性随着时间的劣化得到改善。 在压电振荡器中使用的可变电容电路中，使用P沟道晶体管或N沟道晶体管型作为MOS电容元件。 在源极和漏极区域中形成的P型或N型引出电极之间施加偏压，设置在设置在P阱区域的N阱区域或P型引出电极中的N型引出电极。 因此消除了具有时间的MOS电容元件的不稳定性。
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公开(公告)号：US20060068296A1
公开(公告)日：2006-03-30
申请号：US10536829
申请日：2003-11-21
申请人： Hiroe Nakagawa , Toshiyuki Nukada , Yuki Fujimoto
发明人： Hiroe Nakagawa , Toshiyuki Nukada , Yuki Fujimoto
IPC分类号： H01M10/40
CPC分类号： H01M10/0525 , H01G11/06 , H01G11/60 , H01M4/133 , H01M10/0567 , H01M10/0568 , H01M2300/0025 , Y02E60/13
摘要： The object is to provide a nonaqueous-electrolyte battery having high charge/discharge efficiency and excellent high-rate performance. This subject is accomplished by using a nonaqueous electrolyte which comprises an organic solvent and a lithium salt dissolved therein and is characterized by containing at least one quaternary ammonium salt in an amount of 0.06 mol/L or larger and 0.5 mol/L or smaller. This effect is thought to be attributable to the following mechanism: in a relatively early stage (stage in which the negative-electrode potential is relatively noble) in a first charge step, a satisfactory protective coating film is formed on the negative electrode by the action of the quaternary ammonium salt and, hence, the organic solvent employed in the nonaqueous electrolyte is inhibited from decomposing.
摘要翻译： 本发明的目的是提供一种具有高充电/放电效率和优异的高速率性能的非水电解质电池。 本课题通过使用包含有机溶剂和溶解在其中的锂盐的非水电解质来实现，其特征在于含有0.06mol / L以上且0.5mol / L以下的至少一种季铵盐。 这种效应被认为可归因于以下机理：在第一充电步骤的相对较早的阶段（负极电位相当贵重的阶段），通过动作在负极上形成令人满意的保护涂膜 的季铵盐，因此，在非水电解质中使用的有机溶剂被抑制分解。
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公开(公告)号：US06865066B2
公开(公告)日：2005-03-08
申请号：US10742879
申请日：2003-12-23
申请人： Susumu Kurosawa , Yuki Fujimoto
发明人： Susumu Kurosawa , Yuki Fujimoto
IPC分类号： H01G7/06 , H01G7/00 , H01L21/822 , H01L21/8234 , H01L27/04 , H01L27/06 , H01L27/08 , H01L29/93 , H01L29/94
CPC分类号： H01G7/06 , H01G7/00 , H01L27/0808 , H01L27/0811 , H01L29/93 , H01L29/94
摘要： First and second varactors are disposed on a surface of a P-type substrate. The first varactor includes an N well disposed in the surface of the P-type substrate, a gate insulator disposed on the N well, and an N-type polysilicon layer disposed on the gate insulator. The second varactor includes an N well disposed in the surface of the P-type substrate, a gate insulator disposed on the N well, and a P-type polysilicon layer disposed on the gate insulator. The N-type polysilicon layer and P-type polysilicon layer are connected to a gate terminal. The N wells are connected to an SD terminal via P+ diffusion layers. The N-type polysilicon layer and P-type polysilicon layer have different work functions.
摘要翻译： 第一和第二变容二极管设置在P型衬底的表面上。 第一变容二极管包括设置在P型衬底的表面中的N阱，设置在N阱上的栅极绝缘体和设置在栅极绝缘体上的N型多晶硅层。 第二变容二极管包括设置在P型衬底的表面中的N阱，设置在N阱上的栅极绝缘体和设置在栅极绝缘体上的P型多晶硅层。 N型多晶硅层和P型多晶硅层连接到栅极端子。 N孔通过P +扩散层连接到SD端子。 N型多晶硅层和P型多晶硅层具有不同的功函数。
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公开(公告)号：US07754388B2
公开(公告)日：2010-07-13
申请号：US10536829
申请日：2003-11-21
申请人： Hiroe Nakagawa , Toshiyuki Nukada , Yuki Fujimoto
发明人： Hiroe Nakagawa , Toshiyuki Nukada , Yuki Fujimoto
IPC分类号： H01M10/05 , H01M10/0567 , H01M10/0569
CPC分类号： H01M10/0525 , H01G11/06 , H01G11/60 , H01M4/133 , H01M10/0567 , H01M10/0568 , H01M2300/0025 , Y02E60/13
摘要： The object is to provide a nonaqueous-electrolyte battery having high charge/discharge efficiency and excellent high-rate performance. This subject is accomplished by using a nonaqueous electrolyte which comprises an organic solvent and a lithium salt dissolved therein and is characterized by containing at least one quaternary ammonium salt in an amount of 0.06 mol/L or larger and 0.5 mol/L or smaller. This effect is thought to be attributable to the following mechanism: in a relatively early stage (stage in which the negative-electrode potential is relatively noble) in a first charge step, a satisfactory protective coating film is formed on the negative electrode by the action of the quaternary ammonium salt and, hence, the organic solvent employed in the nonaqueous electrolyte is inhibited from decomposing.
摘要翻译： 本发明的目的是提供一种具有高充电/放电效率和优异的高速率性能的非水电解质电池。 本课题通过使用包含有机溶剂和溶解在其中的锂盐的非水电解质来实现，其特征在于含有0.06mol / L以上且0.5mol / L以下的至少一种季铵盐。 这种效应被认为可归因于以下机理：在第一充电步骤的相对较早的阶段（负极电位相当贵重的阶段），通过动作在负极上形成令人满意的保护涂膜 的季铵盐，因此，在非水电解质中使用的有机溶剂被抑制分解。
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9.发明授权公开(公告)号：US07211875B2
公开(公告)日：2007-05-01
申请号：US10819123
申请日：2004-04-07
IPC分类号： H01L29/66
CPC分类号： H01L29/94
摘要： An N well is disposed in the upper surface of a P type substrate, a gate insulating film and a gate electrode are disposed thereon, and the gate electrode is connected to a gate terminal. Two p+ diffusion regions are placed in two areas in the surface of the N well sandwiching the gate electrode, and the p+ diffusion regions are connected to a ground potential wiring. Further, an n+ diffusion region is disposed in the surface of the N well, and is connected to a well terminal. Accordingly, capacitance is generated between the gate electrode and the N well of a varactor element. When the potential of the gate terminal is decreased, the two p+ diffusion regions absorb positive holes serving as minority carriers from a channel region.
摘要翻译： 在P型基板的上表面设置有N阱，栅极绝缘膜和栅电极配置在其上，栅电极与栅极端子连接。 两个p + +扩散区被放置在夹入栅电极的N阱表面的两个区域中，并且p + +扩散区连接到地电位布线。 此外，n阱扩散区域设置在N阱的表面中，并且连接到阱端子。 因此，在变容二极管元件的栅电极和N阱之间产生电容。 当栅极端子的电位降低时，两个p + SUP扩散区域从沟道区域吸收用作少数载流子的正空穴。
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公开(公告)号：US20060208816A1
公开(公告)日：2006-09-21
申请号：US10566287
申请日：2004-08-03
申请人： Tsuyoshi Ohshima , Shigehisa Kurogo , Masayuki Ishikawa , Susumu Kurosawa , Yuki Fujimoto , Yasutaka Nakashiba
发明人： Tsuyoshi Ohshima , Shigehisa Kurogo , Masayuki Ishikawa , Susumu Kurosawa , Yuki Fujimoto , Yasutaka Nakashiba
IPC分类号： H03B5/32
CPC分类号： H01L27/0811 , H01L27/0808 , H03B5/04 , H03B5/366
摘要： Deterioration in frequency stability with time in a conventional piezoelectric oscillator using an accumulation type MOS capacitance element is improved. A P-channel transistor type or an N-channel transistor type is used as a MOS capacitance element in a variable capacitance circuit used in a piezoelectric oscillator. A bias voltage is applied between P-type or N-type extraction electrodes formed in source and drain regions and an N-type extraction electrode provided in an N-well region or a P-type extraction electrode provided in a P-well region. Instability in the MOS capacitance element with time is thus eliminated.
摘要翻译： 在使用积聚型MOS电容元件的传统压电振荡器中频率稳定性随着时间的劣化得到改善。 在压电振荡器中使用的可变电容电路中，使用P沟道晶体管或N沟道晶体管型作为MOS电容元件。 在源极和漏极区域中形成的P型或N型引出电极之间施加偏压，设置在设置在P阱区域的N阱区域或P型引出电极中的N型引出电极。 因此消除了具有时间的MOS电容元件的不稳定性。
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