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公开(公告)号：US20130251531A1
公开(公告)日：2013-09-26
申请号：US13990483
申请日：2011-10-25
IPC分类号： F04D29/30
CPC分类号： F04D29/20 , F04D17/10 , F04D17/12 , F04D29/2222 , F04D29/263 , F04D29/266 , F04D29/281 , F04D29/284 , F04D29/30 , F05D2260/37
摘要： Provided is a rotary machine including: a shaft that rotates; a disc that has a substantially cylindrical hub fitted into the shaft and is provided so as to widen outward in a radial direction from a front end to a rear end of the hub; and an impeller having a plurality of blades provided on a surface of the disc. The hub has a tight fit section having an internal radius that is smaller than a radius of the shaft, and a loose fit section having an internal radius that is greater than the internal radius of the tight fit section. The loose fit section is provided on the front end side of the hub with respect to the tight fit section.
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公开(公告)号：US09347460B2
公开(公告)日：2016-05-24
申请号：US13990483
申请日：2011-10-25
CPC分类号： F04D29/20 , F04D17/10 , F04D17/12 , F04D29/2222 , F04D29/263 , F04D29/266 , F04D29/281 , F04D29/284 , F04D29/30 , F05D2260/37
摘要： A rotary machine includes: a shaft that rotates; a disc that has a substantially cylindrical hub fitted into the shaft and is provided so as to widen outward in a radial direction from a front end to a rear end of the substantially cylindrical hub; and an impeller having a plurality of blades provided on a surface of the disc. The substantially cylindrical hub has a tight fit section having an internal radius that is smaller than a radius of the shaft, and a loose fit section having an internal radius that is greater than the internal radius of the tight fit section. The loose fit section is provided on a front end side of the substantially cylindrical hub with respect to the tight fit section.
摘要翻译： 旋转机器包括：旋转的轴; 具有安装在所述轴中的大致圆筒形的轮毂，并且设置成从所述大致圆筒形轮毂的前端到后端沿径向向外加宽; 以及具有设置在所述盘的表面上的多个叶片的叶轮。 基本上圆柱形的轮毂具有紧密配合部分，该紧密配合部分具有小于轴的半径的内半径，以及具有大于紧配合部分的内半径的内半径的松配合部分。 松紧配合部分相对于紧密配合部分设置在大致圆柱形轮毂的前端侧。
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公开(公告)号：US09611742B2
公开(公告)日：2017-04-04
申请号：US13976108
申请日：2012-02-17
CPC分类号： F01D5/14 , B23P15/006 , F04D29/266 , F04D29/284 , F04D29/624 , F05B2230/23 , Y10T29/49316
摘要： An impeller is formed of two parts, i.e., an inner peripheral side part and an outer peripheral side part. The inner peripheral side part is molded in a cylindrical shape. The outer peripheral side part is formed by integrally molding an annular disc externally fitted to an outer peripheral surface of the inner peripheral side part, a plurality of blades provided at an interval in a circumferential direction on a surface that faces the other side in the axis line direction of the annular disc and forming a flow path extending in a radial direction, and a cover covering the plurality of blades from the other side in the axis line direction and having an insertion hole to which the inner peripheral side part is inserted in the axis line direction at an interval in a radial direction.
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公开(公告)号：US20130272895A1
公开(公告)日：2013-10-17
申请号：US13976108
申请日：2012-02-17
CPC分类号： F01D5/14 , B23P15/006 , F04D29/266 , F04D29/284 , F04D29/624 , F05B2230/23 , Y10T29/49316
摘要： An impeller is formed of two parts, i.e., an inner peripheral side part and an outer peripheral side part. The inner peripheral side part is molded in a cylindrical shape. The outer peripheral side part is formed by integrally molding an annular disc externally fitted to an outer peripheral surface of the inner peripheral side part, a plurality of blades provided at an interval in a circumferential direction on a surface that faces the other side in the axis line direction of the annular disc and forming al flow path extending in a radial direction, and a cover covering the plurality of blades from the other side in the axis line direction and having an insertion hole to which the inner peripheral side part is inserted in the axis line direction at an interval in a radial direction.
摘要翻译： 叶轮由两部分构成，即内周侧部分和外周侧部分。 内周侧部成型为圆筒状。 外周侧部通过一体地成形外周嵌合于内周侧部的外周面的环状盘而形成，多个叶片沿圆周方向间隔设置在与轴线相对的另一侧的面 环形盘的线方向和形成沿径向延伸的流路，以及从轴线方向上的另一侧覆盖多个叶片的盖，并且具有插入孔，内周侧部分插入到该插入孔中 轴线方向。
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公开(公告)号：US08302754B2
公开(公告)日：2012-11-06
申请号：US12507883
申请日：2009-07-23
CPC分类号： F16D1/092 , F16D2001/0906 , Y10T403/1633
摘要： A tapered coupling structure allows a tapered shaft to be coupled to and decoupled from a hub without the use of an 0-ring. The tapered shaft is provided with a taper part on the side that is coupled to the hub, and the hub is provided with a high-rigidity part having a thickness in the radial direction larger than that of other regions and having a high rigidity in the radial direction. An oil groove formed in the outer peripheral surface of the taper part to feed oil to the coupling surfaces of the taper part and the hub is provided in a region corresponding to the high-rigidity part in the axial direction.
摘要翻译： 锥形联接结构允许锥形轴在不使用O形环的情况下耦合到毂并与毂分离。 锥形轴在与轮毂相连接的一侧上设有锥形部分，轮毂设有高度刚性部分，该高刚性部分的径向厚度大于其他区域的厚度，并具有高刚性 径向。 在与轴向高刚性部分对应的区域中设置有形成在锥形部的外周面上的用于将油供给到锥形部和轮毂的联接表面的油槽。
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公开(公告)号：US08482060B2
公开(公告)日：2013-07-09
申请号：US13052917
申请日：2011-03-21
IPC分类号： H01L29/772
CPC分类号： H01L29/7813 , H01L21/823487 , H01L27/088 , H01L29/0626 , H01L29/0696 , H01L29/0886 , H01L29/1095 , H01L29/4238 , H01L29/66734 , H01L29/7808
摘要： According to one embodiment, a semiconductor device includes a drift region of a first conductivity type, a base region of a second conductivity type, a source region of the first conductivity type, a gate electrode in a trench shape, a contact region of the second conductivity type, a drain electrode, and a source electrode. The drift region is selectively provided in a drain layer of the first conductivity type from a surface of the drain layer to an inside of the drain layer. The base region is selectively provided in the drift region from a surface of the drift region to an inside of the drift region. The source region is selectively provided in the base region from a surface of the base region to an inside of the base region. The gate electrode penetrates from a part of the source region through the base region adjacent to the part of the source region to reach a part of the drift region in a direction substantially parallel to a major surface of the drain layer. The contact region is selectively provided on the surface of the drift region. The contact region contains an impurity having a concentration higher than an impurity concentration of the base region. The drain electrode is connected to the drain layer. The source electrode is connected to the source region and the contact region. The contact region extends from a side of the drain layer toward the drift region and does not contact the drain layer.
摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的漂移区域，第二导电类型的基极区域，第一导电类型的源极区域，沟槽形状的栅电极，第二导电类型的接触区域 导电类型，漏电极和源电极。 漂移区选择性地设置在第一导电类型的漏极层中，从漏极层的表面到漏极层的内部。 基极区域选择性地设置在漂移区域中，从漂移区域的表面到漂移区域的内部。 源极区域从基极区域的表面到基极区域的内部选择性地设置在基极区域中。 栅极电极从源极区域的一部分穿过与源极区域相邻的基极区域，以在与漏极层的主表面基本平行的方向上到达漂移区域的一部分。 接触区选择性地设置在漂移区的表面上。 接触区域含有浓度高于碱性区域的杂质浓度的杂质。 漏电极连接到漏极层。 源电极连接到源极区域和接触区域。 接触区域从漏极层的侧面朝向漂移区域延伸，并且不接触漏极层。
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公开(公告)号：US09556879B2
公开(公告)日：2017-01-31
申请号：US13993486
申请日：2011-07-21
申请人： Hitoshi Shinohara , Mitsuhiko Ota
发明人： Hitoshi Shinohara , Mitsuhiko Ota
CPC分类号： F04D29/08 , F04D17/12 , F04D29/083 , F04D29/4206 , F16J15/48
摘要： A compressor is provided with a substantially tubular compressor casing, a substantially circular lid that is provided inside an inner periphery of the compressor casing so as to close off an end surface of the compressor casing, a space that is enclosed by the lid and an inner circumferential surface of the compressor casing so as to accommodate a blade, and seal member that is provided in a circumferential direction on the space side of an outer circumferential surface of the lid, wherein a slit part is provided on the lid, radially inside the outer circumferential surface, where the seal member is provided, so as to extend in the axial direction from the space side of the lid.
摘要翻译： 压缩机设置有基本上管状的压缩机壳体，大致圆形的盖，其设置在压缩机壳体的内周的内侧，以封闭压缩机壳体的端面，被盖封闭的空间和内部 压缩机壳体的周面，以容纳叶片;以及密封构件，其在盖的外周面的空间侧沿圆周方向设置，其中狭缝部设置在盖上，径向地位于外侧 其中所述密封构件设置在所述圆周表面上，以便从所述盖的空间侧在轴向方向上延伸。
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公开(公告)号：US20120043606A1
公开(公告)日：2012-02-23
申请号：US13053452
申请日：2011-03-22
申请人： Shingo Sato , Hitoshi Shinohara , Keiko Kawamura
发明人： Shingo Sato , Hitoshi Shinohara , Keiko Kawamura
IPC分类号： H01L27/088 , H01L21/8234
CPC分类号： H01L29/7825 , H01L29/0623 , H01L29/063 , H01L29/0634 , H01L29/0886 , H01L29/4175 , H01L29/4236 , H01L29/66704 , H01L29/7393 , H01L29/782
摘要： According to one embodiment, a semiconductor device includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, a gate region, a gate insulating film, and an electric field relaxation region. The first semiconductor region includes a first portion and a second portion. The second semiconductor region includes a third portion and a fourth portion. The third semiconductor region includes a fifth portion and a sixth portion. The fourth semiconductor region is adjacent to the sixth portion. The gate region is provided inside a trench made in a second direction orthogonal to the first direction. The gate insulating film is provided between the gate region and an inner wall of the trench. The electric field relaxation region is provided between the third portion and the fifth portion and has an impurity concentration lower than an impurity concentration of the third semiconductor region.
摘要翻译： 根据一个实施例，半导体器件包括第一半导体区域，第二半导体区域，第三半导体区域，第四半导体区域，栅极区域，栅极绝缘膜和电场弛豫区域。 第一半导体区域包括第一部分和第二部分。 第二半导体区域包括第三部分和第四部分。 第三半导体区域包括第五部分和第六部分。 第四半导体区域与第六部分相邻。 栅极区域设置在与第一方向正交的第二方向上形成的沟槽内。 栅极绝缘膜设置在栅极区域和沟槽的内壁之间。 电场弛豫区设置在第三部分和第五部分之间，其杂质浓度低于第三半导体区域的杂质浓度。
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公开(公告)号：US20130272853A1
公开(公告)日：2013-10-17
申请号：US13993486
申请日：2011-07-21
申请人： Hitoshi Shinohara , Mitsuhiko Ota
发明人： Hitoshi Shinohara , Mitsuhiko Ota
IPC分类号： F04D29/08
CPC分类号： F04D29/08 , F04D17/12 , F04D29/083 , F04D29/4206 , F16J15/48
摘要： A compressor is provided with a substantially tubular compressor casing, a substantially circular lid that is provided inside an inner periphery of the compressor casing so as to close off an end surface of the compressor casing, a space that is enclosed by the lid and an inner circumferential surface of the compressor casing so as to accommodate a blade, and seal member that is provided in a circumferential direction on the space side of an outer circumferential surface of the lid, wherein a slit part is provided on the lid, radially inside the outer circumferential surface, where the seal member is provided, so as to extend in the axial direction from the space side of the lid.
摘要翻译： 压缩机设置有基本上管状的压缩机壳体，大致圆形的盖，其设置在压缩机壳体的内周的内侧，以封闭压缩机壳体的端面，被盖封闭的空间和内部 压缩机壳体的周面，以容纳叶片;以及密封构件，其在盖的外周面的空间侧沿圆周方向设置，其中狭缝部设置在盖上，径向地位于外侧 其中所述密封构件设置在所述圆周表面上，以便从所述盖的空间侧在轴向方向上延伸。
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公开(公告)号：US07507630B2
公开(公告)日：2009-03-24
申请号：US11299907
申请日：2005-12-13
IPC分类号： H01L21/336
CPC分类号： H01L29/4236 , H01L29/4238 , H01L29/66734 , H01L29/7811
摘要： A method of fabricating a semiconductor device includes: forming an insulating film on a semiconductor body to cover a termination area surrounding a cell area; forming a mask material film to cover the cell area and the insulating film; forming a resist film to cover the mask material film; patterning the resist film to have an opening serving as a gate-use resist pattern above the cell area and another opening serving as a dummy resist pattern above the insulating film; selectively etching the mask material film by use of the patterned resist film as a mask so that the insulating film is remained under the dummy resist pattern; selectively etching the semiconductor body by use of the patterned mask material film as another mask to form a trench in the cell area as corresponding to the gate-use resist pattern; and burying gate material in the trench to form the trench gate.
摘要翻译： 制造半导体器件的方法包括：在半导体本体上形成绝缘膜以覆盖围绕单元区域的端接区域; 形成掩模材料膜以覆盖单元区域和绝缘膜; 形成抗蚀剂膜以覆盖掩模材料膜; 将抗蚀剂膜图案化成在单元区域之上具有用作栅极用途抗蚀剂图案的开口，并且在绝缘膜上方具有用作模拟抗蚀剂图案的另一开口; 通过使用图案化的抗蚀剂膜作为掩模来选择性地蚀刻掩模材料膜，使得绝缘膜保持在假抗蚀剂图案下方; 通过使用图案化掩模材料膜作为另一掩模来选择性地蚀刻半导体本体，以在对应于栅极使用抗蚀剂图案的单元区域中形成沟槽; 并将栅极材料埋入沟槽中以形成沟槽栅极。
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