公开(公告)号：US5115306A

公开(公告)日：1992-05-19

申请号：US887950

申请日：1986-05-29

申请人： Nobuyuki Tsuda ,  Masaaki Tamatani ,  Fukaya Ajiro ,  Nagai Hitosi

发明人： Nobuyuki Tsuda ,  Masaaki Tamatani ,  Fukaya Ajiro ,  Nagai Hitosi

IPC分类号： H01J9/22 ,  C09K11/08 ,  C09K11/77 ,  C09K11/86 ,  H01J29/20 ,  H01J29/22

CPC分类号： C09K11/777 ,  H01J29/20 ,  H01J29/22

摘要： A projection cathode-ray tube for a projection video apparatus, comprising a green-emitting screen including a terbium-activated lanthanum oxychloride phosphor. The disclosed phosphor exhibits a luminance maximum at a minimum beam size, a property advantageous for producing a high-resolution image. The phosphor is chemically stable at high temperatures. The phosphor shows no substantial decrease in emission efficiency even at about 80.degree. C., and the emission luminance is twofold that of the prior art. The green-emitting screen is made by the steps of: (a) settling the terbium-activated lanthanum oxychloride phosphor onto the inner surface of a cathode-ray tube, wherein the phosphor is settled from a suspension comprising a solution of potassium water glass and barium nitrate, and wherein the ratio of the weight concentration of potassium water glass to barium nitrate is in the range between about 20 to about 35; and (b) removing the resulting supernatant.

摘要翻译： 一种用于投影视频设备的投影阴极射线管，包括具有铽激活的氯氧化镧荧光体的绿色发光屏。 所公开的荧光体以最小光束尺寸显示亮度最大值，这对于产生高分辨率图像是有利的。 磷光体在高温下是化学稳定的。 荧光体即使在约80℃也不显着地降低发光效率，发光亮度与现有技术的发光亮度相差两倍。 绿色荧光屏由以下步骤制成：（a）将铽激活的氯氧化镧荧光粉沉淀到阴极射线管的内表面上，其中荧光体由包含钾水玻璃溶液和 硝酸钡，并且其中钾水玻璃与硝酸钡的重量浓度之比在约20至约35之间; 和（b）除去所得上清液。

公开(公告)号：US4518985A

公开(公告)日：1985-05-21

申请号：US384947

申请日：1982-06-04

申请人： Masaaki Tamatani ,  Nobuyuki Tsuda ,  Norio Koike ,  Sakae Ajiro

发明人： Masaaki Tamatani ,  Nobuyuki Tsuda ,  Norio Koike ,  Sakae Ajiro

IPC分类号： H01J9/22 ,  H01J29/20 ,  H01J31/10 ,  H04N9/31

CPC分类号： H01J29/20

摘要： A projection type green cathode ray tube (CRT) with improved brightness despite an increase in the temperature of the faceplate, a method for manufacturing a phosphor screen adopted therein, and a projection video device which utilizes the projection type green CRT. The phosphor screen of the CRT is formed of a cerium-activated calcium sulfide phosphor which contains 0.01 to 0.3 mol% of cerium. According to the method for manufacturing the phosphor screen, the cerium-activated calcium sulfide phosphor is precipitated in a 0.3 to 5% aqueous solution of water glass based on weight. The aqueous solution does not contain barium ions. The projection video device includes the green CRT, a red CRT having a phosphor screen which is formed of an europium-activated yttrium oxide phosphor, and a blue CRT having a phosphor screen which is formed of a silver-activated zinc sulfide phosphor. Brightness of images is improved and does not substantially change over time.

摘要翻译： 尽管面板的温度升高，但是其中采用的荧光屏的制造方法和利用投影型绿色CRT的投影视频装置的投影型绿色阴极射线管（CRT）具有改善的亮度。 CRT的荧光屏由含有0.01〜0.3mol％的铈的铈活化的硫化钙荧光体形成。 根据荧光屏的制造方法，以0.3〜5重量％的水玻璃水溶液析出铈活化的硫化钙荧光体。 水溶液不含钡离子。 投影视频装置包括绿色CRT，具有由铕激活的氧化钇荧光体形成的荧光屏的红色CRT和具有由银活化的硫化锌荧光体形成的荧光屏的蓝色CRT。 图像的亮度得到改善，并且随着时间的推移基本上不会改变。

公开(公告)号：US6143623A

公开(公告)日：2000-11-07

申请号：US468224

申请日：1999-12-20

申请人： Nobuyuki Tsuda ,  Hideki Fujikake

发明人： Nobuyuki Tsuda ,  Hideki Fujikake

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L29/78

CPC分类号： H01L21/76224 ,  Y10S148/05

摘要： A semiconductor device includes a semiconductor substrate in which a trench for element isolation is formed, and an element isolation oxide film buried into the trench in such a manner that the element isolation oxide film is projected from the surface of the semiconductor substrate. The element isolation oxide film which is an element isolation insulating film for defining an element forming region on the semiconductor substrate has a projection portion above the surface of the semiconductor substrate. The projection portion has the width wider than that of the trench. The projection portion and a contact portion made in contact with the semiconductor substrate within the trench are made of thermal oxide films, and a portion other than the projection portion and the contact portion is made of a CVD dioxide film.

摘要翻译： 半导体器件包括其中形成用于元件隔离的沟槽的半导体衬底和以从元件隔离氧化膜从半导体衬底的表面突出的方式埋入沟槽中的元件隔离氧化膜。 作为用于限定半导体衬底上的元件形成区域的元件隔离绝缘膜的元件隔离氧化膜在半导体衬底的表面上方具有突起部。 突出部的宽度比沟槽宽。 与沟槽内的半导体衬底接触的突出部分和接触部分由热氧化膜制成，并且突出部分和接触部分之外的部分由CVD二氧化物膜制成。

公开(公告)号：US6020622A

公开(公告)日：2000-02-01

申请号：US038111

申请日：1998-03-11

申请人： Nobuyuki Tsuda ,  Hideki Fujikake

发明人： Nobuyuki Tsuda ,  Hideki Fujikake

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L29/78 ,  H01L29/00 ,  H01L23/62 ,  H01L29/76

CPC分类号： H01L21/76224 ,  Y10S148/05

摘要： A semiconductor device includes a semiconductor substrate in which a trench for element isolation is formed, and an element isolation oxide film buried into the trench in such a manner that the element isolation oxide film is projected from the surface of the semiconductor substrate. The element isolation oxide film which is an element isolation insulating film for defining an element forming region on the semiconductor substrate has a projection portion above the surface of the semiconductor substrate. The projection portion has the width wider than that of the trench. The projection portion and a contact portion made in contact with the semiconductor substrate within the trench are made of thermal oxide films, and a portion other than the projection portion and the contact portion is made of a CVD dioxide film.

公开(公告)号：US06501148B2

公开(公告)日：2002-12-31

申请号：US09468225

申请日：1999-12-20

申请人： Nobuyuki Tsuda ,  Hideki Fujikake

发明人： Nobuyuki Tsuda ,  Hideki Fujikake

IPC分类号： H01L2900

CPC分类号： H01L21/76224 ,  Y10S148/05

摘要： A semiconductor device includes a semiconductor substrate in which a trench for element isolation is formed, and an element isolation oxide film buried into the trench in such a manner that the element isolation oxide film is projected from the surface of the semiconductor substrate. The element isolation oxide film which is an element isolation insulating film for defining an element forming region on the semiconductor substrate has a projection portion above the surface of the semiconductor substrate. The projection portion has the width wider than that of the trench. The projection portion and a contact portion made in contact with the semiconductor substrate within the trench are made of thermal oxide films, and a portion other than the projection portion and the contact portion is made of a CVD dioxide film.

摘要翻译： 半导体器件包括其中形成用于元件隔离的沟槽的半导体衬底和以从元件隔离氧化膜从半导体衬底的表面突出的方式埋入沟槽中的元件隔离氧化膜。 作为用于限定半导体衬底上的元件形成区域的元件隔离绝缘膜的元件隔离氧化膜在半导体衬底的表面上方具有突起部。 突出部的宽度比沟槽宽。 与沟槽内的半导体衬底接触的突出部分和接触部分由热氧化膜制成，并且突出部分和接触部分之外的部分由CVD二氧化物膜制成。