Electronic devices made with metal Schiff base complexes
    4.
    发明授权
    Electronic devices made with metal Schiff base complexes 有权
    用金属席夫碱配合物制成的电子设备

    公开(公告)号:US08563856B2

    公开(公告)日:2013-10-22

    申请号:US13070200

    申请日:2011-03-23

    IPC分类号: H01L31/00

    CPC分类号: H01L51/0081 H05B33/20

    摘要: The present invention relates to new electronic devices including a layer comprising a photoactive material and metal Schiff base complex, wherein the metal Schiff base complex is present as a host for the photoactive material or in a layer between the cathode and the photoactive material containing layer, or both.

    摘要翻译: 本发明涉及包括光活性材料和金属席夫碱络合物的层的新电子器件,其中金属希夫碱络合物作为光活性材料的主体或在阴极和光活性材料含有层之间的层中存在, 或两者。

    ELECTRONIC DEVICES MADE WITH METAL SCHIFF BASE COMPLEXES
    5.
    发明申请
    ELECTRONIC DEVICES MADE WITH METAL SCHIFF BASE COMPLEXES 有权
    电子器件采用金属衬底复合材料制成

    公开(公告)号:US20110186835A1

    公开(公告)日:2011-08-04

    申请号:US13070200

    申请日:2011-03-23

    IPC分类号: H01L51/54

    CPC分类号: H01L51/0081 H05B33/20

    摘要: The present invention relates to new electronic devices including a layer comprising a photoactive material and metal Schiff base complex, wherein the metal Schiff base complex is present as a host for the photoactive material or in a layer between the cathode and the photoactive material containing layer, or both.

    摘要翻译: 本发明涉及包括光活性材料和金属席夫碱络合物的层的新电子器件,其中金属希夫碱络合物作为光活性材料的主体或在阴极和光活性材料含有层之间的层中存在, 或两者。