公开(公告)号：US08120135B2

公开(公告)日：2012-02-21

申请号：US12704034

申请日：2010-02-11

申请人： Norbert Krischke ,  Nicola Vannucci ,  Sven Lanzerstorfer ,  Thomas Ostermann ,  Mathias Racki ,  Markus Zundel

发明人： Norbert Krischke ,  Nicola Vannucci ,  Sven Lanzerstorfer ,  Thomas Ostermann ,  Mathias Racki ,  Markus Zundel

IPC分类号： H01L29/76

CPC分类号： H01L29/7811 ,  H01L27/0207 ,  H01L29/0642 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7821

摘要： A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array.

摘要翻译： 晶体管具有具有两个或多个晶体管单元的单元阵列，集成在单元阵列中或与单元阵列相邻的温度传感器和隔离结构。 隔离结构将温度传感器与电池阵列隔离，并且具有隔离沟槽，其布置在电池阵列和温度传感器之间。 最靠近温度传感器的温度传感器和有源晶体管单元之间的距离大致对应于单元阵列内的有源晶体管单元之间的间距。

公开(公告)号：US20100207206A1

公开(公告)日：2010-08-19

申请号：US12704034

申请日：2010-02-11

申请人： Norbert Krischke ,  Nicola Vannucci ,  Sven Lanzerstorfer ,  Thomas Ostermann ,  Mathias Racki ,  Markus Zundel

发明人： Norbert Krischke ,  Nicola Vannucci ,  Sven Lanzerstorfer ,  Thomas Ostermann ,  Mathias Racki ,  Markus Zundel

IPC分类号： H01L29/78

CPC分类号： H01L29/7811 ,  H01L27/0207 ,  H01L29/0642 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7803 ,  H01L29/7813 ,  H01L29/7821

摘要： A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array.

摘要翻译： 晶体管具有具有两个或多个晶体管单元的单元阵列，集成在单元阵列中或与单元阵列相邻的温度传感器和隔离结构。 隔离结构将温度传感器与电池阵列隔离，并且具有隔离沟槽，其布置在电池阵列和温度传感器之间。 最靠近温度传感器的温度传感器和有源晶体管单元之间的距离大致对应于单元阵列内的有源晶体管单元之间的间距。

公开(公告)号：US20050270869A1

公开(公告)日：2005-12-08

申请号：US11132561

申请日：2005-05-19

申请人： Norbert Krischke ,  Nicola Vannucci ,  Sven Lanzerstorfer ,  Thomas Krotscheck ,  Mathias Racki ,  Markus Zundel

发明人： Norbert Krischke ,  Nicola Vannucci ,  Sven Lanzerstorfer ,  Thomas Krotscheck ,  Mathias Racki ,  Markus Zundel

IPC分类号： G11C29/00 ,  H01L29/06 ,  H01L29/40 ,  H01L29/423 ,  H01L29/78

CPC分类号： H01L29/7813 ,  H01L27/0207 ,  H01L29/0642 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7821

摘要： A transistor has a cell array with two or more transistor cells, a temperature sensor, which is integrated in the cell array or is adjacent to the cell array, and an isolation structure. The isolation structure isolates the temperature sensor from the cell array, and has an isolation trench, which is arranged between the cell array and the temperature sensor. The distance between the temperature sensor and the active transistor cell that is closest to the temperature sensor corresponds approximately to the pitch between active transistor cells within the cell array.

摘要翻译： 晶体管具有具有两个或多个晶体管单元的单元阵列，集成在单元阵列中或与单元阵列相邻的温度传感器和隔离结构。 隔离结构将温度传感器与电池阵列隔离，并且具有隔离沟槽，其布置在电池阵列和温度传感器之间。 最靠近温度传感器的温度传感器和有源晶体管单元之间的距离大致对应于单元阵列内的有源晶体管单元之间的间距。