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公开(公告)号：US07956324B2
公开(公告)日：2011-06-07
申请号：US12155038
申请日：2008-05-29
IPC分类号： H01J37/26
CPC分类号： G01N23/225 , H01J37/265 , H01J37/28 , H01J2237/221
摘要： The invention provides a charged particle beam apparatus capable of preventing image errors in a display image and capturing a clear display image. A display image displayed on a display unit has a rectangular shape having sides that are substantially parallel to coordinate axes of a rectangular coordinate system determined by wafer alignment. A charged particle beam is radiated onto an area including a display image in a direction that is not parallel to the coordinate axes of the reference rectangular coordinate system to scan the area. Then, among image information obtained by scanning, only information of a position within the display image is displayed on the image display unit. In this way, a clear display image without brightness variation is obtained.
摘要翻译： 本发明提供一种能够防止显示图像中的图像错误并捕获清晰显示图像的带电粒子束装置。 在显示单元上显示的显示图像具有与由晶片对准确定的直角坐标系的坐标轴基本平行的侧面的矩形。 带电粒子束在与平行于参考直角坐标系的坐标轴不平行的方向上辐射到包括显示图像的区域上以扫描该区域。 然后，在通过扫描获得的图像信息中，只有显示图像中的位置的信息被显示在图像显示单元上。 以这种方式，可以获得没有亮度变化的清晰显示图像。
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公开(公告)号：US20080302962A1
公开(公告)日：2008-12-11
申请号：US12155038
申请日：2008-05-29
IPC分类号： G01N23/225
CPC分类号： G01N23/225 , H01J37/265 , H01J37/28 , H01J2237/221
摘要： The invention provides a charged particle beam apparatus capable of preventing image errors in a display image and capturing a clear display image. A display image displayed on a display unit has a rectangular shape having sides that are substantially parallel to coordinate axes of a rectangular coordinate system determined by wafer alignment. A charged particle beam is radiated onto an area including a display image in a direction that is not parallel to the coordinate axes of the reference rectangular coordinate system to scan the area. Then, among image information obtained by scanning, only information of a position within the display image is displayed on the image display unit. In this way, a clear display image without brightness variation is obtained.
摘要翻译： 本发明提供一种能够防止显示图像中的图像错误并捕获清晰显示图像的带电粒子束装置。 在显示单元上显示的显示图像具有与由晶片对准确定的直角坐标系的坐标轴基本平行的侧面的矩形。 带电粒子束在与平行于参考直角坐标系的坐标轴不平行的方向上辐射到包括显示图像的区域上以扫描该区域。 然后，在通过扫描获得的图像信息中，只有显示图像中的位置的信息被显示在图像显示单元上。 以这种方式，可以获得没有亮度变化的清晰显示图像。
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公开(公告)号：US20060243906A1
公开(公告)日：2006-11-02
申请号：US11412976
申请日：2006-04-28
申请人： Atsuko Fukada , Mitsugu Sato , Naomasa Suzuki , Hidetoshi Nishiyama , Muneyuki Fukuda , Noritsugu Takahashi
发明人： Atsuko Fukada , Mitsugu Sato , Naomasa Suzuki , Hidetoshi Nishiyama , Muneyuki Fukuda , Noritsugu Takahashi
IPC分类号： G01N23/00
CPC分类号： G01N23/2251 , H01J37/147 , H01J37/244 , H01J37/28 , H01J2237/1501 , H01J2237/1508 , H01J2237/2449 , H01J2237/24507
摘要： In an electric immersion lens having high resolution capability, secondary electrons generated from a specimen are accelerated to suppress the dependency of rotational action of the secondary electrons applied thereto by an objective lens upon energy levels of the secondary electrons and when selectively detecting low and high angle components of elevation and azimuth as viewed from a secondary electron generation site by means of an annular detector interposed between an electron source and the objective lens, the secondary electrons are adjusted and deflected by means of an E×B deflector such that the center axis of secondary electrons converged finely under acceleration is made to be coincident with the center axis of a low elevation signal detection system and the secondary electrons are deviated from an aperture of a high elevation signal detection system.
摘要翻译： 在具有高分辨能力的电浸透镜中，加速从样本产生的二次电子，以抑制由物镜施加到其上的二次电子的旋转作用对二次电子的能级的依赖性，并且当选择性地检测低角度和高角度时 通过插入在电子源和物镜之间的环形检测器从二次电子产生位置观察的仰角和方位的分量，二次电子通过ExB偏转器被调节和偏转，使得二次电子的中心轴 在加速度下精细收敛与低仰角信号检测系统的中心轴一致，二次电子偏离高仰角信号检测系统的孔径。
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公开(公告)号：US20060186351A1
公开(公告)日：2006-08-24
申请号：US11349974
申请日：2006-02-09
申请人： Hidetoshi Nishiyama , Muneyuki Fukuda , Noritsugu Takahashi , Mitsugu Sato , Atsuko Fukada , Naomasa Suzuki
发明人： Hidetoshi Nishiyama , Muneyuki Fukuda , Noritsugu Takahashi , Mitsugu Sato , Atsuko Fukada , Naomasa Suzuki
IPC分类号： G21G5/00
CPC分类号： H01J37/244 , H01J37/28 , H01J2237/24495 , H01J2237/2817
摘要： To establish a technique that enables sorting of the elevation and azimuth angle in the direction of emitting secondary electrons and obtaining images with emphasized contrast, in order to perform the review and analysis of shallow asperities and microscopic foreign particles in a wafer inspection during the manufacture of semiconductor devices, an electromagnetic overlapping objective lens is used to achieve high resolution, an electron beam is narrowly focused using the objective lens, an electric field for accelerating secondary electrons in the vicinity of a wafer in order to suppress the dependence on secondary electron energy of the rotation of secondary electrons generated by irradiation of the electron beam, a ring-shaped detector plate is disposed between an electron source and the objective lens, and the low angle components of the elevation angle of the secondary electrons, as viewed from the place of generation, and the high angle components are separated and also the azimuth components are separated and detected.
摘要翻译： 为了建立能够在发射二次电子的方向上对高程和方位角进行排序并获得具有强调对比度的图像的技术，以便在制造期间对晶片检查中的浅凹凸和微观异物进行检查和分析 半导体器件使用电磁重叠物镜实现高分辨率，电子束使用物镜窄聚焦，用于加速晶片附近的二次电子的电场，以抑制对二次电子能量的依赖性 通过电子束的照射产生的二次电子的旋转，环状检测器板设置在电子源和物镜之间，并且从二次电子的位置观察二次电子的仰角的低角分量 并且高角度分量被分离，也是azimu 分离和检测。
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公开(公告)号：US07449690B2
公开(公告)日：2008-11-11
申请号：US11349974
申请日：2006-02-09
申请人： Hidetoshi Nishiyama , Muneyuki Fukuda , Noritsugu Takahashi , Mitsugu Sato , Atsuko Fukada , Naomasa Suzuki
发明人： Hidetoshi Nishiyama , Muneyuki Fukuda , Noritsugu Takahashi , Mitsugu Sato , Atsuko Fukada , Naomasa Suzuki
CPC分类号： H01J37/244 , H01J37/28 , H01J2237/24495 , H01J2237/2817
摘要： To establish a technique that enables sorting of the elevation and azimuth angle in the direction of emitting secondary electrons and obtaining images with emphasized contrast, in order to perform the review and analysis of shallow asperities and microscopic foreign particles in a wafer inspection during the manufacture of semiconductor devices, an electromagnetic overlapping objective lens is used to achieve high resolution, an electron beam is narrowly focused using the objective lens, an electric field for accelerating secondary electrons in the vicinity of a wafer in order to suppress the dependence on secondary electron energy of the rotation of secondary electrons generated by irradiation of the electron beam, a ring-shaped detector plate is disposed between an electron source and the objective lens, and the low angle components of the elevation angle of the secondary electrons, as viewed from the place of generation, and the high angle components are separated and also the azimuth components are separated and detected.
摘要翻译： 为了建立能够在发射二次电子的方向上对高程和方位角进行排序并获得具有强调对比度的图像的技术，以便在制造期间对晶片检查中的浅凹凸和微观异物进行检查和分析 半导体器件使用电磁重叠物镜实现高分辨率，电子束使用物镜窄聚焦，用于加速晶片附近的二次电子的电场，以抑制对二次电子能量的依赖性 通过电子束的照射产生的二次电子的旋转，环状检测器板设置在电子源和物镜之间，并且从二次电子的位置观察二次电子的仰角的低角分量 并且高角度分量被分离，也是azimu 分离和检测。
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公开(公告)号：US08153969B2
公开(公告)日：2012-04-10
申请号：US12323167
申请日：2008-11-25
申请人： Atsuko Fukada , Mitsugu Sato , Naomasa Suzuki , Hidetoshi Nishiyama , Muneyuki Fukuda , Noritsugu Takahashi
发明人： Atsuko Fukada , Mitsugu Sato , Naomasa Suzuki , Hidetoshi Nishiyama , Muneyuki Fukuda , Noritsugu Takahashi
IPC分类号： G01N23/00
CPC分类号： G01N23/2251 , H01J37/147 , H01J37/244 , H01J37/28 , H01J2237/1501 , H01J2237/1508 , H01J2237/2449 , H01J2237/24507
摘要： In an electric immersion lens having high resolution capability, secondary electrons generated from a specimen are accelerated to suppress the dependency of rotational action of the secondary electrons applied thereto by an objective lens upon energy levels of the secondary electrons and when selectively detecting low and high angle components of elevation and azimuth as viewed from a secondary electron generation site by means of an annular detector interposed between an electron source and the objective lens, the secondary electrons are adjusted and deflected by means of an E×B deflector such that the center axis of secondary electrons converged finely under acceleration is made to be coincident with the center axis of a low elevation signal detection system and the secondary electrons are deviated from an aperture of a high elevation signal detection system.
摘要翻译： 在具有高分辨能力的电浸透镜中，加速从样本产生的二次电子，以抑制由物镜施加到其上的二次电子的旋转作用对二次电子的能级的依赖性，并且当选择性地检测低角度和高角度时 通过设置在电子源和物镜之间的环形检测器从二次电子产生位置观察的仰角和方位的分量，二次电子通过E×B偏转器被调节和偏转，使得中心轴线 在加速度下精细收敛的二次电子与低仰角信号检测系统的中心轴一致，二次电子偏离高仰角信号检测系统的孔径。
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公开(公告)号：US07462828B2
公开(公告)日：2008-12-09
申请号：US11412976
申请日：2006-04-28
申请人： Atsuko Fukada , Mitsugu Sato , Naomasa Suzuki , Hidetoshi Nishiyama , Muneyuki Fukuda , Noritsugu Takahashi
发明人： Atsuko Fukada , Mitsugu Sato , Naomasa Suzuki , Hidetoshi Nishiyama , Muneyuki Fukuda , Noritsugu Takahashi
IPC分类号： G01N23/00
CPC分类号： G01N23/2251 , H01J37/147 , H01J37/244 , H01J37/28 , H01J2237/1501 , H01J2237/1508 , H01J2237/2449 , H01J2237/24507
摘要： In an electric immersion lens having high resolution capability, secondary electrons generated from a specimen are accelerated to suppress the dependency of rotational action of the secondary electrons applied thereto by an objective lens upon energy levels of the secondary electrons and when selectively detecting low and high angle components of elevation and azimuth as viewed from a secondary electron generation site by means of an annular detector interposed between an electron source and the objective lens, the secondary electrons are adjusted and deflected by means of an E×B deflector such that the center axis of secondary electrons converged finely under acceleration is made to be coincident with the center axis of a low elevation signal detection system and the secondary electrons are deviated from an aperture of a high elevation signal detection system.
摘要翻译： 在具有高分辨能力的电浸透镜中，加速从样本产生的二次电子，以抑制由物镜施加到其上的二次电子的旋转作用对二次电子的能级的依赖性，并且当选择性地检测低角度和高角度时 通过插入在电子源和物镜之间的环形检测器从二次电子产生位置观察的仰角和方位的分量，二次电子通过ExB偏转器被调节和偏转，使得二次电子的中心轴 在加速度下精细收敛与低仰角信号检测系统的中心轴一致，二次电子偏离高仰角信号检测系统的孔径。
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公开(公告)号：US20130126733A1
公开(公告)日：2013-05-23
申请号：US13812899
申请日：2011-08-08
申请人： Muneyuki Fukuda , Naomasa Suzuki , Tomoyasu Shojo , Noritsugu Takahashi , Hiroshi Suzuki , Hiroshi Makino
发明人： Muneyuki Fukuda , Naomasa Suzuki , Tomoyasu Shojo , Noritsugu Takahashi , Hiroshi Suzuki , Hiroshi Makino
IPC分类号： H01J37/26
CPC分类号： H01J37/263 , G01N23/22 , H01J37/222 , H01J37/28
摘要： This charged particle beam microscope is characterized by being provided with selection means (153, 155) for a measurement processing method for detected particles (118) and by this means selecting a different measurement processing method for a scanning region with a large number of secondary electrons (115) emitted from a sample (114) and for a region with a small number of secondary electrons. Thus, in sample scanning using a charged particle beam microscope, an image in which the contrast of bottom holes and channel bottoms with few emitted secondary electrons is emphasized and images that emphasize shadow contrast can be acquired in a short period of time.
摘要翻译： 该带电粒子束显微镜的特征在于设置有用于检测粒子（118）的测量处理方法的选择装置（153,155），并且通过这种方式为具有大量二次电子的扫描区域选择不同的测量处理方法 （114）和二次电子数量少的区域（115）。 因此，在使用带电粒子束显微镜的样本扫描中，强调了具有较少发射的二次电子的底部孔和通道底部的对比度的图像，并且可以在短时间内获取强调阴影对比度的图像。
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公开(公告)号：US20130270435A1
公开(公告)日：2013-10-17
申请号：US13879051
申请日：2011-10-05
IPC分类号： H01J37/02
CPC分类号： H01J37/023 , H01J37/153 , H01J37/28 , H01J2237/1534
摘要： The electron beam device includes a source of electrons and an objective deflector. The electron beam device obtains an image on the basis of signals of secondary electrons, etc. which are emitted from a material by an electron beam being projected. The electron beam device further includes a bias chromatic aberration correction element, further including an electromagnetic deflector which is positioned closer to the source of the electrons than the objective deflector, and an electrostatic deflector which has a narrower interior diameter than the electromagnetic deflector, is positioned within the electromagnetic deflector such that the height-wise position from the material overlaps with the electromagnetic deflector, and is capable of applying an offset voltage. It is thus possible to provide an electron beam device with which it is possible to alleviate geometric aberration (parasitic aberration) caused by deflection and implement deflection over a wide field of view with high resolution.
摘要翻译： 电子束装置包括电子源和物镜偏转器。 电子束装置基于通过投射的电子束从材料发射的二次电子等的信号获得图像。 电子束装置还包括偏置色差校正元件，该偏置色差校正元件还包括位于比物镜偏转器更靠近电子源的电磁偏转器和具有比电磁偏转器更窄的内径的静电偏转器， 在电磁偏转器内，使得材料的高度位置与电磁偏转器重叠，并且能够施加偏移电压。 因此，可以提供一种电子束装置，通过该电子束装置可以减轻由偏转引起的几何像差（寄生像差），并且在高分辨率的宽视角上实现偏转。
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公开(公告)号：US08405026B2
公开(公告)日：2013-03-26
申请号：US12554275
申请日：2009-09-04
CPC分类号： H01J37/153 , H01J37/04 , H01J37/28
摘要： Disclosed herewith is a charged particle beam apparatus capable of controlling each of the probe current and the objective divergence angle to obtain a desired probe current and a desired objective divergence angle in accordance with the diameter of the subject objective aperture. The apparatus is configured to include an objective aperture between first and second condenser lenses to calculate and set a control value of a first condenser lens in accordance with the diameter of the hole of the objective aperture so as to obtain a desired probe current and calculate a control value of a second condenser lens setting device in accordance with the diameter of the hole of the objective divergence angle and the control value of the second condenser lens setting device, thereby setting the calculated control value for the second condenser lens setting device to control the objective divergence angle.
摘要翻译： 本文公开了一种带电粒子束装置，其能够根据目标物镜孔径来控制探针电流和物镜发散角度，以获得所需的探针电流和期望的物体发散角。 该装置被配置为在第一和第二聚光透镜之间包括物镜孔，以根据物镜孔的直径来计算和设置第一聚光透镜的控制值，以获得所需的探针电流，并计算 根据目标发散角的孔的直径和第二聚光透镜设定装置的控制值的第二聚光透镜设定装置的控制值，由此设定计算出的第二聚光透镜设定装置的控制值， 客观发散角。
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