公开(公告)号：US12066391B2

公开(公告)日：2024-08-20

申请号：US18206033

申请日：2023-06-05

Applicant: Nova Measuring Instruments, Inc.

Inventor： Wei Ti Lee ,  Heath Pois ,  Mark Klare ,  Cornel Bozdog

IPC: G01N23/223 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/2273 ,  H01L21/66

CPC classification number: G01N23/2273 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223 ,  H01L22/12 ,  G01N2223/305 ,  G01N2223/61 ,  G01N2223/633

Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

公开(公告)号：US11668663B2

公开(公告)日：2023-06-06

申请号：US16741515

申请日：2020-01-13

Applicant: Nova Measuring Instruments, Inc.

Inventor： Wei Ti Lee ,  Heath Pois ,  Mark Klare ,  Cornel Bozdog

IPC: G01N23/223 ,  G01N23/2208 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2273 ,  H01L21/66

CPC classification number: G01N23/2273 ,  G01B11/06 ,  G01B15/02 ,  G01N23/223 ,  G01N23/2208 ,  H01L22/12 ,  G01N2223/305 ,  G01N2223/61 ,  G01N2223/633

Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

公开(公告)号：US20180328871A1

公开(公告)日：2018-11-15

申请号：US15773145

申请日：2016-11-02

Applicant: Nova Measuring Instruments, Inc.

Inventor： Wei Ti Lee ,  Heath Pois ,  Mark Klare ,  Cornel Bozdog

IPC: G01N23/2273 ,  G01N23/2208 ,  G01B15/02

CPC classification number: G01N23/2273 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223 ,  G01N2223/305 ,  G01N2223/61 ,  G01N2223/633 ,  H01L22/12

Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

公开(公告)号：US20230408430A1

公开(公告)日：2023-12-21

申请号：US18206033

申请日：2023-06-05

Applicant: Nova Measuring Instruments, Inc.

Inventor： Wei Ti Lee ,  Heath Pois ,  Mark Klare ,  Cornel Bozdog

IPC: G01N23/2273 ,  H01L21/66 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223

CPC classification number: G01N23/2273 ,  H01L22/12 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223 ,  G01N2223/305 ,  G01N2223/633 ,  G01N2223/61

Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

公开(公告)号：US10533961B2

公开(公告)日：2020-01-14

申请号：US15773145

申请日：2016-11-02

Applicant: Nova Measuring Instruments, Inc.

Inventor： Wei Ti Lee ,  Heath Pois ,  Mark Klare ,  Cornel Bozdog

IPC: G01N23/227 ,  G01N23/223 ,  G01N23/22 ,  G01N23/2273 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208

Abstract: Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).